6311 results about "Copper oxide" patented technology

A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH₃COOH) or acetic acid/ammonium hydroxide (NH₄OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H₂ plasma. BTA passivation may be optionally performed on the substrate.

A catalyst system and a method for reducing nitrogen oxides in an exhaust gas by reduction with a hydrocarbon or oxygen-containing organic compound reducing agent are provided. The catalyst system contains a silver catalyst and a modifier catalyst, where the modifier catalyst contains a modifier oxide, where the modifier oxide is selected from the group consisting of iron oxide, cerium oxide, copper oxide, manganese oxide, chromium oxide, a lanthanide oxide, an actinide oxide, molybdenum oxide, tin oxide, indium oxide, rhenium oxide, tantalum oxide, osmium oxide, barium oxide, calcium oxide, strontium oxide, potassium oxide, vanadium oxide, nickel oxide, tungsten oxide, and mixtures thereof. The modifier oxide is supported on an inorganic oxide support or supports, where at least one of the inorganic oxide supports is an acidic support. The catalyst system of the silver catalyst and the modifier catalyst provides higher NO_x conversion than either the silver catalyst or the modifier catalyst alone.

The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

The invention discloses a catalyst for preparing alcohol by acetic ester hydrogenation as well as a preparation method and an application thereof, which is characterized in that the main catalyst of the catalyst is copper or copper oxide or a mixture of the copper and the copper oxide, and the cocatalyst can be also added, wherein the cocatalyst is one or more of oxides of zinc, manganese, chromium, calcium, barium, iron, nickel and magnesium; and the carrier is alumina or silica sol. The catalyst has high activity and high selectivity under the condition of low temperature and low pressure, thus greatly reducing the investment cost of permanent plants, lowering production energy consumption, being extremely beneficial for the industrial production, and having good stability and long service life. The catalyst of the invention is used to cause percent conversion of a reaction of converting the acetic ester into the alcohol is more than or equal to 80% and the selectivity of the alcohol is more than or equal to 95%.

A highly reliable copper circuit-joined board that, in mounting a semiconductor element, a lead frame or the like on a ceramic substrate, enables the semiconductor element, the lead frame or the like to be strongly joined to the substrate without breaking or deformation of the substrate found in conventional joining methods, such as brazing and joining using a copper/copper oxide eutectic crystal. Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1000.degree. C. or below, comprising Ni, Fe, Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board. The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.

A semiconductor photocatalyst responsive to visual light is composed of the particles of metallic oxide chosen from iron oxide, nickel oxide, cabolt oide, copper oxide, etc, the non-metal element chosen from N, C, S, B and P and semiconductor nanoparticles chosen frmo TiO2, SnO2, ZnO, CdS and WO3.

The invention relates to a method for producing copper chloride hydroxide and blue vitriod by using cupriferous etching wastewater; the method comprises the following steps: acidic copper chloride etching wastewater and alkaline copper chloride etching wastewater are neutralized and crystallized to get acidic copper chloride crystal under the condition of strictly controlling filling liquid and the Ph range of a reaction kettle, and then pumped and filtrated, and centrifugated; part of the obtained alkaline copper chloride crystal is dried to obtain finished products while the other is added with NaOH solution for alkali conversion to obtain copper oxide, and then is acidulated by sulphuric acid, crystallized, washed, centrifugated, and dried to obtain blue vitriod products. The method for producing blue vitriod by directly using sulphuric acid-oxyful etching wastewater includes the following steps: sulphuric acid-oxyful etching wastewater and composition brass wasterwater in a PCB manufacture are blended together and added with NaOH to form cupric hydroxide precipitation which filtrated, washed, and then acidulated by sulphuric acid to obtain copper sulphate solution; after the copper sulphate solution is cooled, crystallized, centrifugated and dried, and the blue vitriod is obtained.

A semiconductor device which effectively reduces copper oxide layers on copper conductive lines is disclosed. The method includes forming a first insulating layer on a semiconductor substrate; forming a first conductive line by depositing a conductive material on the first insulating layer and selectively patterning the conductive material. A second insulating layer is deposited on top of the substrate including on the first conductive line. A via hole is formed by selectively patterning the second insulating layer to expose a certain portion of the first conductive line. A natural oxide layer is removed by plasma-processing the natural oxide layer using H₂+CO gas.

The invention relates to a supported catalyst for use in the production of 1, 4-butynediol by a Reppe method, a preparation method thereof and application thereof, in particular to a method for preparing a catalyst for use in the synthesis of1, 4-butynediol by formaldehyde and acetylene in a slurry bed and application. The method is characterized by comprising the steps of: taking 40 to 60 mass percent of treated kaolin as a carrier, and depositing soluble copper salt and soluble bismuth salt on the carrier by a method for depositing sediments, so that the catalyst contains 57 to 37 mass percent of copper oxide. The catalyst prepared by the method has high activity and selectivity, and compared with similar catalysts without the carrier, the catalyst is wear-resistance and saves copper resources.

Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

A multilayer ceramic electronic component includes external terminal electrodes that are formed by depositing metal plating films on exposed portions of internal conductors embedded in a ceramic body, depositing a copper plating films that cover the metal plating films and make contact with the ceramic body around the metal plating films, and heat-treating the ceramic body to generate a copper liquid phase, an oxygen liquid phase, and a copper solid phase between the copper plating films and the ceramic body. The mixed phase including these phases forms a region at which a copper oxide is present in a discontinuous manner inside the copper plating film at least at the interfaces between the ceramic body and the copper plating films. The copper oxide securely attaches the copper plating films to the ceramic body and enhances the bonding force of the external terminal electrodes.

The invention discloses a catalyst for preparing 1, 4-butynediol and a preparation method of the catalyst for preparing 1, 4-butynediol. According to the method, acidized nano-silica is adopted as a carrier, the adopted nano-silica has a large outer specific surface, a dipping method and a deposition-precipitation method are used for adsorbing copper and bismuth on the carrier, so that the catalyst comprises 35-65% of copper oxide by mass, and meanwhile silica sol is added, so that the catalyst is more stable and abrasion resistant. The prepared catalyst is good in activity, high in selectivity and strength, not prone to pulverizing in the process of using and capable of keeping high activity.

A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.

The related preparation method for a CuO catalyst contained 1.0-5.0% active carbon carrier comprises: dipping the active carbon in 10% NaOH solution/HNO3 solution for 24h to filter and clean with deionized water till neutrality in turns, drying in oven at 100-110Deg, adding 0.2-0.3mol/L Cu(NO3)2 solution to stir and drop 20% NaHCO3 till much deposition, slaking 24h, filtering, cleaning with deionized water till no separation of metal ion, drying in oven at 100-110Deg, and activating the obtained solid for 2.5h at 270-280Deg.

The invention relates to a catalyst for ethanediol production by oxalic ester hydrogenation, which solves the problems of small specific surface, low activity and poor stability of the catalyst in the previous technique. The catalyst used in the invention is composed of the following active components, assistants and carriers in terms of parts by weight: (a) 5-80 parts of active components; (b) 0-40 parts of assistants and (c) 1-30 parts of carriers, wherein the active component is copper, copper oxide or mixture thereof, the assistant is selected from at least one of Zn, Mn, Ba, Cr, Ni or Fe or oxides thereof and the carrier is selected from at least one of the alumina, silica, zirconia or molecular sieve. When the active component is copper, the technical scheme that the value of (b) is more than zero solves the problem in a good way. The catalyst can be used for ethanediol production in the industry.

The invention relates to preparation of a supported catalyst for 1,4-butynediol. The supported catalyst used is characterized in that a mesoporous molecular sieve is used as a carrier, and soluble copper salt and bismuth are loaded on the carrier by an impregnation method so that the mass content of copper in the catalyst is 15-30%, and the mass content of bismuth is 1-6%. In the prepared catalyst, the particle size of copper oxide is 10-80nm, and the bismuth oxide is amorphous powder; the copper oxide and the bismuth oxide are uniformly distributed on the carrier and interact with the carrier; and the catalyst has high activity and high selectivity in producing 1,4-butynediol through an alkyne hydroformylation reaction, is more stable and wear-resistant than similar catalysts, and saves copper resources.

The invention relates to a catalyst for preparing ethanol from acetic ester hydrogenation, a preparation method and an application thereof. The main catalytic components of the catalyst are copper or copper oxide with a content of 30 wt%-75 wt%; an auxiliary agent is one or more of La2O3, ZrO2, CeO2, Fe2O3, NiO, MgO, MnO, Al2O3 and K2O, with a content of 1wt%-40 wt%; a carrier is zinc oxide with a content of 20 wt%-65 wt%. In a relatively low hydrogen ester ratio and relatively large liquid hourly space velocity, the catalyst has a conversion rate of acetate larger than 99% and a selectivity of ethanol larger than 99%. Besides, the catalyst has good stability, can reduce cost greatly, and obtains higher production gains. The catalyst is simple in preparation method; the raw materials of the catalyst have wide sources and low cost; and the preparation process of the catalyst is environment-friendly, and is suitable for industrialized production.