Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Anode structure and fabrication process of top emitting oled device

An anode structure and device technology, which is applied in the field of preparation of anode structures of top light-emitting OLED devices, can solve the problems of device disconnection, device failure, and large-scale production yield decline, so as to reduce the probability of short circuit and reduce the hole injection barrier. , the effect of improving stability

Active Publication Date: 2015-12-02
YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the anode and the drive circuit cannot achieve good thermal compatibility and lattice matching, it will cause the device to appear "open circuit", resulting in a large number of device failures, causing a sharp drop in the yield rate of large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anode structure and fabrication process of top emitting oled device
  • Anode structure and fabrication process of top emitting oled device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1 : the anode structure of the top emitting OLED device of the present invention, the base thickness is 1mm, made of silicon and SiO 2 Composition, which is characterized by covering the silicon surface with SiO with a thickness of 160nm 2 film. Four-layer thin films were prepared on the substrate in the following manner:

[0027] Step 1: Deposit Cr on the cleaned substrate as a substrate-compatible layer to achieve good compatibility with the substrate; the thickness of the substrate-compatible layer is 15nm, and the film adopts PVD methods such as electron beam evaporation, thermal evaporation, ion beam assisted deposition, and sputtering preparation;

[0028] Step 2: Metal Al with low absorption and high reflection characteristics in the visible light band is deposited on the base compatible layer as an intermediate reflectivity layer with a thickness of 35 nm. The preparation of the intermediate reflectivity layer meets the requirement of high reflectivi...

Embodiment 2

[0034] Example 2 : the anode structure of the top emitting OLED device of the present invention, the base thickness is 1mm, made of silicon and SiO 2 Composition, which is characterized by covering the silicon surface with SiO with a thickness of 160nm 2 film. Cover the substrate with four layers of film in the following manner:

[0035] Step 1: Deposit a substrate-compatible layer made of Cr film on the cleaned substrate to achieve good compatibility with the substrate; the thickness of the substrate-compatible layer is 10nm, and the film is prepared by electron beam evaporation;

[0036] The second step: Deposit the first interfacial transition layer on the substrate compatible layer, which is made of Cr and Al alloys. The film is prepared by the PVD method of a multi-source evaporation system, and the ratio is adjusted by controlling the film growth rate between different components. The film thickness is 5nm;

[0037] Step 3: Deposit metal Al with low absorption and h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of organic light-emitting diode manufacturing, in particular to preparation of a top-emitting organic light-emitting diode (OLED) device anode structure. The top-emitting OLED device anode structure is characterized in that four layers of thin films cover a substrate, a base compatible layer, a middle reflectivity layer, a energy level matching layer and an anode modifying layer are respectively arranged on the substrate from bottom to top, multifunctionality of an anode is achieved through adoption of the design of a multi-layer thin film structure, light-emitting efficiency of a top-emitting OLED device is obviously improved, and the service life of the top-emitting OLED device is obviously prolonged. Furthermore, due to the fact that the anode is prepared by materials which are not prone to occurrence of element diffusion, probability of occurrence of shot circuit of device pixels due to the element diffusion is reduced. Due to adoption of metallic simple substance or alloy or metallic compound, raw materials can be easily obtained and are low in price, and thin film preparation methods are various.

Description

technical field [0001] The invention relates to the technical field of organic light-emitting diode manufacturing, in particular to the preparation of an anode structure of a top-emitting OLED device. Background technique [0002] OLED is an Organic Light-Emitting Diode (Organic Light-Emitting Diode), which has self-illumination, no backlight, high contrast, thin thickness, wide viewing angle, and fast response. It can be made into solid-state flat panel display panels, solid-state flexible panels and transparent panels. , wide temperature range, simple structure and preparation process and other excellent characteristics. In recent years, through continuous exploration of new materials and further optimization of device structure and process, organic electroluminescent devices have made great progress. However, in order to give full play to their advantages in the flat panel display market, the luminous efficiency of organic electroluminescent devices , chromaticity, drivi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
Inventor 王光华段瑜邓荣斌张筱丹季华夏
Owner YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com