The invention provides a silicon on insulator-lateral insulated gate bipolar transistor (SOI-LIGBT) device structure with low switch-off loss and dual groove gates. The SOI-LIGBT device structure comprises a P-type substrate, buried oxide layer SiO2, an N-type drift region, a P-type well region, an N-buffer layer, an oxide layer, two N-type source ends, a P-type contact region and an N-type positive electrode region, wherein the P-type contact region is arranged between the two N-type source ends, gate oxide layers are arranged at two sides of a channel between the source ends and the P-type well region, and poly-silicon is arranged aside the gate oxide layers and is arranged at two sides of the P-type well region and at a left side of the N-buffer layer. The SOI-LIGBT device structure possesses a dual-gate structure and has higher current capability under the same condition, holes directly injected to the P-type well region are reduced by the introduction of an N-type carrier storage layer, so that the carrier distribution is more uniform, the carrier combination during switch off is facilitated, and the switch-off time is reduced; the effective space of the N-type drift region is reduced by groove medium SiO2, the injection of carriers at a right side is also simultaneously blocked, and a carrier accumulation layer is formed; and based on two effects, the switch-off loss of the structure is substantially reduced.