1437 results about "Body contact" patented technology

A medical system includes a body-contacting signal source adapted to transmit an oscillatory signal though a body to a transducer of a device implanted therein. A detector that is coupled to the transducer, upon detection of a response of the transducer to the signal, activates a radio-frequency (RF) telemetry component of the device.

A dynamic memory circuit in which the inherent bipolar transistor effect within a floating body transistor is utilized to store an information bit. A floating body of a storage transistor stores an information bit in the form of an electric charge. The floating body is charged and discharged via an access transistor during data write operations. The inherent bipolar transistor resident within the floating body transistor increases the effective capacitance of the floating body which acts as the storage node, and thereby enhances the magnitude of the discharge current which represents the stored information bit during read operations.

Electric communication unit to be placed on a person's skin, comprising a support element (3), a series of body contacts (7), a pulse generator (6) provided for generating a series of pulses and for transmitting the series of pulses to said series of body contacts (7), said series of body contacts (7) being provided to transmit said series of pulses onto the skin of said person. The electric communication unit is in the form of a patch.

A system for advising an exerciser about his physical activities, associated either with displacement of the exerciser itself or of an object displaced by the exerciser, or an object displaced simultaneously with the exerciser. The system comprises a first unit for monitoring the activities. This unit is not in physical contact with the exerciser or the object, displaced by the exerciser. The first unit is capable to collect raw data defining the activities either in terms of distance or acceleration. The first unit transmits the collected raw data in a wireless fashion to a second unit, which receives the transmitted raw data, processes it and calculates various parameters, defining the said physical activities, and represents the calculated parameters in a form recognizable by the exerciser. The system enables tracking, recording and updating the relevant information, provides improved feedback and thus helps to the exercising individual to improve his performances.

Provided is a wearable, self-contained drug infusion or medical device capable of communicating with a host controller or other external devices via a personal area network (PAN). The medical device utilizes a PAN transceiver for communication with other devices in contact with a user's body, such as a physiological sensor or host controller, by propagating a current across the user's body via capacitive coupling. The wearable nature of the medical device and the low power requirements of the PAN communication system enable the medical device to utilize alternative energy harvesting techniques for powering the device. The medical device preferably utilizes thermal, kinetic and other energy harvesting techniques for capturing energy from the user and the environment during normal use of the medical device. A system power distribution unit is provided for managing the harvested energy and selectively supplying power to the medical device during system operation.

A method for manufacturing a trenched metal oxide semiconductor field effect transistor (MOSFET) cell includes the steps of opening a gate trench in a semiconductor substrate and implanting ions of a first conductivity type same as a conductivity type of a source region with at least two levels of implanting energies to form a column of drain-to-source resistance reduction regions below the gate trench. The method further includes steps of forming a gate in the gate trench and forming body and source regions in the substrate surrounding the gate trench. Then the MOSFET cell is covered with an insulation layer and proceeds with applying a contact mask for opening a source-body contact trench with sidewalls substantially perpendicular to a top surface of the insulation layer into the source and body regions. The method further includes a step of implanting ions of a second conductivity type opposite the first conductivity type with at least two levels of implanting energies to form a column of electrical field reduction regions below the source-body contact trench next to the column of drain-to-source resistance reduction regions to function as charge balance regions to the drain-to-source resistance reduction regions.

According to an aspect of the present invention, long term medical articles are provided which include the following: (a) first and second body contacting (e.g., tissue and/or body-fluid contacting) porous polymeric layers; (b) a polymeric barrier layer disposed between the first and second porous polymer layers; and (c) a reinforcement element. According to another aspect of the present invention, tubular medical articles for long term implantation are provided, which comprise: (a) a reinforcement element; (b) a blood contacting porous polymeric layer having a surface energy ranging between 20 and 30 dynes/cm disposed over an inner surface of the reinforcement element; and (c) an additional porous polymeric layer formed over an outer surface of the reinforcement element.

A semiconductor power device includes trenched semiconductor power device comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an insulation layer covering the trenched semiconductor power device with a source-body contact trench opened therethrough the source and body regions and extending into an epitaxial layer below the body regions and filled with contact metal plug therein. The semiconductor power device further includes an embedded Schottky diode disposed near a bottom of the source-body contact trench below the contact metal plug wherein the Schottky diode further includes a Schottky barrier layer having a barrier height for reducing a leakage current through the embedded Schottky diode during a reverse bias between the drain and the source.

Silicon on insulator (SOI) field effect transistors (FET) with a shared body contact, a SRAM cell and array including the SOI FETs and the method of forming the SOI FETs. The SRAM cell has a hybrid SOI/bulk structure wherein the source/drain diffusions do not penetrate to the underlying insulator layer, resulting in a FET in the surface of an SOI layer with a body or substrate contact formed at a shared contact. FETs are formed on SOI silicon islands located on a BOX layer and isolated by shallow trench isolation (STI). NFET islands in the SRAM cells include a body contact to a P-type diffusion in the NFET island. Each NFET in the SRAM cells include at least one shallow source/drain diffusion that is shallower than the island thickness. A path remains under the shallow diffusions between NFET channels and the body contact. The P-type body contact diffusion is a deep diffusion, the full thickness of the island. Bit line diffusions shared by SRAM cells on adjacent wordlines may be deep diffusions.

The Ice Belt To Reduce Body Temperature is a belt made of a turned out strip of flexible material of amble width and length to gird the waist from the midriff down, contains pocket-like receptacles on its innermost body-contacting side for the placement of flexible ice bags, and is secured around the waist by a connecting means. The Ice Belt to Reduce Body Temperature is a new concept of belts intended for sports, exercise and safety because the Ice Belt To Reduce Body Temperature provides the wearer with the comfort of a lower body temperature when exposed to high climatic conditions. In fact, most belts pertaining to the prior art are designed to promote sweating—a symptom of high body temperature—rather than reduce sweating. Therefore, the Ice Belt helps to lessen the risk of the user acquiring heat exhaustion when exposed to high climatic conditions.

An N-channel device (40, 60) is described having a lightly doped substrate (42, 42′) in which adjacent or spaced-apart P (46, 46′) and N (44) wells are provided. A lateral isolation wall (76) surrounds at least a portion of the substrate (42, 42′) and is spaced apart from the wells (46, 46′, 44). A first gate (G1) (56) overlies the P (46) well or the substrate (42′) between the wells (46′, 44) or partly both. A second gate (G2) (66), spaced apart from G1 (56), overlies the N-well (44). A body contact (74) to the substrate (42, 42′) is spaced apart from the isolation wall (76) by a first distance (745) within the space charge region of the substrate (42, 42′) to isolation wall (76) PN junction. When the body contact (74) is connected to G2 (66), a predetermined static bias Vg2 is provided to G2 (66) depending upon the isolation wall bias (Vbias) and the first distance (745). The resulting device (40, 60) operates at higher voltage with lower Rdson and less HCI.

As compared to conventional electrodes, the electrode configurations disclosed herein minimize irritation and damage to the skin when they are placed in contact with a patient's body over extended of time. The electrodes are formed from a conductive substrate coated with a thin dielectric material, and a plurality of open spaces pass through the electrodes. Those open spaces are distributed and sized to permit moisture on the surface of the patient's body to escape when the electrode is placed in contact with the patient's body. One intended use for the electrodes is for treating tumors by applying an AC electric field with specific frequency and field strength characteristics over an extended period of time.

This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.

A novel method for forming substrate contact regions on a SOI substrate without requiring additional space, and in order to provide lower diffusion capacitance. The method utilizes known semiconductor processing techniques. This method for selectively modifying the BOX region of a SOI substrate involves first providing a silicon substrate. Then, ion implanting the base using SIMOX techniques (e.g. O2 implant) is accomplished. Next, the substrate is photopatterned to protect the modified BOX region. Then, further ion implanting using a "touch-up" O2 implant is accomplished, thereby resulting in a good quality BOX as typically practiced. The final step is annealing the substrate. The area of the substrate, which had a mask present, would not receive the "touch-up" O2 implant (second ion implant), which in turn would result in a leaky BOX.

A composite material for producing a layer of a disposable hygienic article that comes into physical contact with the body including a first body-contacting layer and a second layer. The first body contacting layer is composed of monocomponent and bicomponent fibers having a denier of 3.5 dtex or less. The second layer is composed of between 40 and 100 percent bicomponent fibers having a denier of 4 to 10 dtex with a lower melting point component lower than the melting point of the monocomponent fibers of the first layer.

An electronic stethoscope head includes a head member having a contact surface for contact with a patient's body, a transducer in the head member, and an adhesive on the contact surface. A processing system for an electronic stethoscope includes a conditioning circuit configured to receive a transducer signal from a transducer and to be capable of amplifying and/or filtering the transducer signal, to yield a conditioned signal. There is also a signal processor system configured to subject the conditioned signal to an audio editing process. Bodily sounds are detected by applying an electronic stethoscope head a patient's body; generating a patient sonograph of the patient's bodily sounds; and comparing the patient sonograph to a reference sonograph. An electronic stethoscope system may include an accessory device and control circuitry to control the accessory device when abnormal bowel sounds are detected or no bowel sounds are detected for a predetermined interval.