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Nickel oxide film and preparation method thereof, and quantum dot light emitting diode

A technology of quantum dot luminescence and nickel oxide film, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unfavorable hole injection and limitation, reduce and non-radiative recombination centers, facilitate deposition, and improve luminous efficiency Effect

Inactive Publication Date: 2020-04-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, NiO also has shortcomings. There is a large gap between its valence band top energy level (less than 5.4eV) and the current mainstream Cd family quantum dot valence band top energy level (6.2-7eV), which is not conducive to hole injection and thus limits Development of an all-inorganic QLED with NiO as a hole-transporting layer

Method used

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  • Nickel oxide film and preparation method thereof, and quantum dot light emitting diode

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Effect test

Embodiment 1

[0054] A quantum dot light-emitting diode, which includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are sequentially stacked from bottom to top, and its specific preparation includes the following steps:

[0055] 1. Use transparent conductive film ITO as the anode with a thickness of 50nm;

[0056] 2. Deposit a NiO film on the anode by magnetron sputtering, with a thickness of 30nm;

[0057] 3. Drop o-dichlorobenzene on the surface of the NiO film layer and make the o-dichlorobenzene cover the surface of the NiO film layer, and then carry out under the condition that the UV light power is 80W and the UV light time is 3min. Carrying out ultraviolet light to grow Cl-Ni polar bonds on the surface of the NiO film layer to prepare a nickel oxide film, and use the nickel oxide film as a hole transport layer;

[0058] 4. Deposit CdSe / ZnS on the hole transport layer as a quantum dot light-emitting layer by so...

Embodiment 2

[0062] A quantum dot light-emitting diode, which includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are sequentially stacked from bottom to top, and its specific preparation includes the following steps:

[0063] 1. Use transparent conductive film ITO as the anode with a thickness of 50nm;

[0064] 2. Deposit a NiO film on the anode by magnetron sputtering, with a thickness of 30nm;

[0065] 3. Add chlorobenzene dropwise on the surface of the NiO film and make the chlorobenzene cover the surface of the NiO film, and then carry out ultraviolet light under the condition that the UV light power is 150W and the UV light time is 5min. Illumination, so that Cl-Ni polar bonds are grown on the surface of the NiO film layer, and a nickel oxide film is obtained, and the nickel oxide film is used as a hole transport layer;

[0066] 4. Deposit CdSe / ZnS on the hole transport layer as a quantum dot light-emitting l...

Embodiment 3

[0070]A quantum dot light-emitting diode, which includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are sequentially stacked from bottom to top, and its specific preparation includes the following steps:

[0071] 1. Use transparent conductive film ITO as the anode with a thickness of 50nm;

[0072] 2. Deposit a NiO film on the anode by magnetron sputtering, with a thickness of 30nm;

[0073] 3. Add chloroform dropwise on the surface of the NiO film layer and make the chloroform cover the surface of the NiO film layer, and then carry out ultraviolet light irradiation in an ozone environment under the condition that the ultraviolet light power is 200W and the ultraviolet light time is 10min. growing Cl-Ni polar bonds on the surface of the NiO film layer to prepare a nickel oxide film, using the nickel oxide film as a hole transport layer;

[0074] 4. Deposit CdSe / ZnS as the quantum dot light-emitting lay...

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Abstract

The invention discloses a nickel oxide film and a preparation method thereof, and a quantum dot light emitting diode, and the nickel oxide film comprises a nickel oxide film layer and a Cl-Ni bond connected to the surface of the nickel oxide film layer. The Cl-Ni bond combined on the surface of the nickel oxide film layer can improve the electrostatic potential energy of electrons on the surface of the nickel oxide film layer, so that the surface work function of the nickel oxide film is improved. When the nickel oxide thin film is applied to a quantum dot light emitting diode as a hole transport layer, the nickel oxide thin film with a relatively high surface work function can reduce a hole injection barrier between the nickel oxide thin film and the quantum dot light emitting layer, so that the light emitting efficiency of a QLED is improved; the Cl-Ni polar bond can also reduce the roughness of the surface of the nickel oxide thin film, so that deposition of the quantum dot light emitting layer is facilitated, interface defects between the hole transport layer and the quantum dot light emitting layer can be reduced, carrier transport traps and a non-radiative recombination center are reduced, and the light-emitting efficiency of the QLED is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a nickel oxide thin film, a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Due to the unique optical properties of quantum dots, such as continuously adjustable emission wavelength with size and composition, narrow emission spectrum, high fluorescence efficiency, and good stability, quantum dot light-emitting diodes (QLEDs) have received extensive attention and research. In addition, QLED display also has many advantages that LCD cannot achieve, such as large viewing angle, high contrast ratio, fast response speed, and flexibility, so it is expected to become the next generation of display technology. [0003] At present, QLED can be divided into two categories from the structure, one is organic-inorganic combined QLED, that is, the material of the hole transport layer is made of organic matter, and the material of the electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/14
Inventor 苏亮
Owner TCL CORPORATION
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