Organic electroluminescent device and preparation method thereof
An electroluminescent device and electroluminescent technology, which can be applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as low luminous efficiency
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[0037] see figure 2 , the preparation method of the organic electroluminescent device of an embodiment, comprises the following steps:
[0038] S210 , preparing a hole transport layer 130 on the conductive anode substrate 110 by evaporation using an evaporation technique.
[0039] Wherein, the conductive anode substrate 110 includes a transparent substrate 1102 and an anode layer 1104 prepared on the transparent substrate 1102 . Preferably, the transparent substrate 1102 is glass. The material of the anode layer 1104 is indium tin oxide (ITO). The sheet resistance of the anode layer 1104 is 5˜100Ω / sq.
[0040] Preferably, before the surface of the anode layer of the conductive anode substrate is vapor-deposited to prepare the hole transport layer, a step of cleaning the conductive anode substrate is also included. The cleaning step is as follows: the conductive anode substrate is ultrasonically cleaned with detergent, deionized water, acetone, ethanol and isopropanol in s...
Embodiment 1
[0063] The structure of the organic electroluminescent device prepared in this embodiment is: ITO / Cu 2 O:NPB / TPBi:Ir(ppy) 3 / Bphen / LiF / Ag; where, the slash " / " indicates a layered structure, and the colon ":" indicates doping, the same below.
[0064] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0065] (1) Wash the ITO glass substrate sequentially with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface. The square resistance of the ITO conductive glass is 5Ω / sq.
[0066] (2) In a vacuum of 1×10 -5 In Pa's vacuum coating system, a hole transport layer is prepared on the surface of the conductive anode ITO. The material of the hole transport layer includes organic hole transport materials and doping materials doped in organic hole transport materials. Organic hole transport materials For NPB, the doping material is Cu 2 O, Cu 2 The mass ratio of O to NPB is 5:100, the th...
Embodiment 2
[0075] The structure of the organic electroluminescent device prepared in this embodiment is: ITO / CuF:MeO-TPD / DPVBi / TPBi / CsF / Al.
[0076] The preparation of the organic electroluminescent device of this embodiment is as follows:
[0077] (1) Wash the ITO glass substrate sequentially with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface. The square resistance of the ITO conductive glass is 100Ω / sq.
[0078] (2) In a vacuum of 1×10 -4 In Pa's vacuum coating system, a hole transport layer is prepared on the surface of the conductive anode ITO. The material of the hole transport layer includes organic hole transport materials and doping materials doped in organic hole transport materials. Organic hole transport materials It is MeO-TPD, the doping material is CuF, the mass ratio of CuF to MeO-TPD is 30:100, the thickness of the hole transport layer is 100nm, and the cuprous fluoride is evaporated by electron beam, and the ...
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