200results about How to "Improve doping efficiency" patented technology

The invention which provides an oxygen reduction non-noble metal catalyst and a preparation method thereof belongs to the technical field of fuel cells. The nitrogen doped non-noble metal fuel cell catalyst having a graphite-like structure is formed by introducing nitrogen-containing monomers into layered inorganic compound interlayers and carrying out interlayer polymerization-pyrolysis. The active nitrogen loss is effectively reduced and the graphitization degree of the catalyst is effectively improved by utilizing an almost closed effect of the layered compound to improve the catalytic activity and the stability of the non-noble metal catalyst. The method of the invention has the advantages of simplicity and easy implement, and low production cost; and the catalyst prepared through the method has the advantages of good oxygen reduction catalytic activity and good stability, and can be applied to a fuel cell with a proton exchange membrane as an electrolyte. The fuel cell manufactured with the catalyst can be widely applied to electric automobiles, various spacecrafts, and portable electronic devices, such as cameras, notebook computers, electric toys and the like.

The invention discloses a preparation method of the p-GaN ohmic contact with a low resistance, relating to a p-GaN, and provides a preparation method of a low resistance p-GaN ohmic contact. The invention comprises the following steps: a (0001) oriented sapphire substrate is arranged in a reaction chamber and heated in an atmosphere of H2, and then is cooled, and a nitriding treatment is performed on the substrate; cooling the material and a GaN buffer layer grows on the material, then the material is heated to recrystallize the GaN buffer layer; a layer of GaN grows on the epitaxy of the material; the material is cooled to grows a GaN layer doping Mg; the material is cooled to grow five cycles of p-InGaN / p-AlGaN superlattice layer; a p-InGaN top layer grows on the five cycles of p-InGaN / p-AlGaN superlattice layer. The result shows that adopting the p-InGaN / p-AlGaN superlattice layer as a top layer can provide a lower specific contact resistance.

The invention discloses an activation method of magnesium-doped nitride-based materials and luminescent diode P type gallium nitride, which comprises using an ICP plasma to process magnesium-doped nitride-based materials or luminescent diode P type gallium nitride, wherein reaction atmosphere comprises gas which contains oxygen element and mixed gas which contains oxygen element gas, or mixed gas of above gas with nitrogen, helium or argon gas, wherein the density of the plasma is between 1011-3 and 1012cm-3, then, removing oxidizing substance generated through the above reaction, and doing 400-600 EDG C high-temperature annealing to the materials. The activation method gets high-cavity density of magnesium-doped GaN materials, and improves the activation efficiency of magnesium-doped p-GaN.

The invention discloses a glassy carbon electrode (GCE) modified by aniline-co-aminophenol copolymer carbon nanotube composite, a preparation method thereof and a method for removing perchlorat from water. The preparation method of the glassy carbon electrode comprises the following steps: dispersing carbon nanotubes in DMF; taking a proper amount of mixed liquor to drip onto the clean surface of the glassy carbon electrode, and air drying; carrying out electrolytic polymerization on a three-electrode system consisting of a glassy carbon working electrode modifying the carbon nanotube, a platinum counter electrode and a calomel reference electrode in the mixed liquor of hydrochloric acid, aniline and o-aminophenol through a constant bit method; thus, generating aniline-co-aminophenol copolymer carbon nanotube composite on the surface of the carbon nanotube modified glassy carbon electrode after a certain time. The modified electrode is washed by diluted hydrochloric acid and secondary water successively, forms the three-electrode system with the platinum counter electrode and the calomel reference electrode, and is doped in the water body containing perchlorat. The perchlorat is doped on the glassy carbon electrode modified by the aniline-co-aminophenol copolymer carbon nanotube composite, which can be seen clearly in an X-ray photoelectron spectroscopy.

The invention discloses crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment. The crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment is prepared from crystalline silicon dioxide base bodies and gamma-Ce2S3 pigment particles wrapped with the base bodies; and the two or more gamma-Ce2S3 pigment particles are inlaid in each crystalline silicon dioxide base body. In addition, the invention further discloses a preparation method of the crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment and a prepared product. The wrapped gamma-Ce2S3 red pigment adopts crystalline silicon dioxide as a wrapping body, wrapping is complete, a wrapping layer is compact, and the wrapped gamma-Ce2S3 red pigment has excellent acid corrosion resisting and high-temperature oxidation resisting properties; and the wrapped gamma-Ce2S3 red pigment is prepared through an acid and alkaline stepped catalysis sol-gel method, the process is easy to operate, the wrapping efficiency is high, the wrappedgamma-Ce2S3 red pigment can well adapt to the development tendency of environmental friendliness and clean production, and industrial production of the crystalline silicon dioxide wrapped gamma-Ce2S3red pigment and development and popularization of the technology of the crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment are facilitated.

The invention discloses a growing method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the steps that a substrate is provided, and a low-temperature buffering layer, a high-temperature buffering layer, an N-type layer, an active layer and an electronic barrier layer grow on the substrate in sequence; a P-type layer composed of an undoped intrinsic GaN layer, a doped GaN armoring layer and a concave doped GaN layer grows, the growing temperature of the concave doped GaN layer is higher than that of the intrinsic GaN layer, the growing temperature of the intrinsic GaN layer is higher than that of the GaN armoring layer, first concentration Mg is used in the GaN armoring layer to carry out doping, second concentration Mg is adopted in the concave doped GaN layer to carry out doping, third concentration Mg is utilized for carrying out doping, finally the first concentration Mg is adopted to carry out doping, the first concentration is larger than the second concentration, and the second concentration is larger than the third concentration; the P-type layer is activated. The hole concentration is increased through high-temperature growing of the concave doped GaN layer, the Mg doping efficiency can be guaranteed, and damage to the InGaN active layer cannot be increased.

The invention provides an LED epitaxial structure which comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer, an Si-doped n-type GaN layer, an InxGa(1-x)N / GaN light emitting layer, an InX / Mg3N2 super-lattice inner roughed layer, a p-type AlGaN layer and a magnesium-doped p-type GaN layer, wherein the substrate, the low-temperature buffer layer, the non-doped GaN layer, the Si-doped n-type GaN layer, the InxGa(1-x)N / GaN light emitting layer, the InX / Mg3N2 super-lattice inner roughed layer, the p-type AlGaN layer and the magnesium-doped p-type GaN layer are successively laminated. The InX / Mg3N2 super-lattice inner roughed layer comprises 8-10 monomers which are arranged in an overlapped manner. Each monomer comprises an InN layer and a Mg3N2 layer. The LED epitaxial structure provided by the invention is advantageous in that the InX / Mg3N2 super-lattice inner roughed layer covers the light emitting layer; the InX / Mg3N2 material has an advantage of low mismatch with the GaN crystal lattice; high quality of the epitaxial layer crystal is realized; not only is light efficiency improved, but also antistatic capability can be improved; and LED product quality is improved. As an integral technical solution, the InX / Mg3N2 super-lattice inner roughed layer has advantages of increasing number of photons extracted from the LED in light unit time, reducing number of attenuation times of the photons in the LED, and correspondingly improving light extraction strength. The invention further discloses a growing method of the LED epitaxial structure. The growing method of the LED epitaxial structure has advantages of concise steps, easy process parameter control and convenient industrial production.

The embodiment of the invention provides a thin film transistor, a fabrication method thereof, an array substrate and a display device in technical field of display, which can be used for improving ion injection efficiency of a source-drain and reducing the contact resistance between the source-drain and an active layer. The thin film transistor comprises a source, a drain, a gate, a gate insulation layer and an active layer, wherein the source, the drain and the gate are arranged on the substrate, and the active layer comprises poly-silicon, the source, the drain and the gate are arranged on the active layer, at least one through hole is formed in a contact region of the source and / or the drain and the active layer, and ions are doped into a region, corresponding to the through hole, of the active layer.