35results about How to "Improve crystallinity" patented technology

A light-emitting element (10) is provided with a thin-film crystal layer which includes a buffer layer (22), a first-conductivity-type semiconductor layer, an active structure (25) and a second-conductivity-type semiconductor layer. In the thin-film crystal layer, at least a part of the second-conductivity-type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin-film crystal layer.

An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.

The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.

Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.

Provided is a method for manufacturing a semiconductor light emitting element (1) in which a defect is less likely to occur in a light emitting layer and a p-type semiconductor layer due to the surface of a second n-type semiconductor layer and which is capable of obtaining a high output. The method for manufacturing a semiconductor light emitting element includes a first step of forming a first n-type semiconductor layer (12c) on a substrate (11) and a second step of sequentially forming a regrowth layer (12d) of the first n-type semiconductor layer (12c), a second n-type semiconductor layer (12b), a light emitting layer (13), and a p-type semiconductor layer (14) on the first n-type semiconductor layer (12c). In the step of forming the second n-type semiconductor layer (12b), a step (1) of supplying Si less than that forming the regrowth layer (12d) as a dopant to form a first layer of the second n-type semiconductor layer and a step (2) of supplying the Si more than that in the step (1) to form a second layer of the second n-type semiconductor layer are performed in this order.

The invention relates to a method for preparing an ethylene-tetrafluoroethylene copolymer, wherein a solution precipitation polymerization method is adopted; polymeric monomers adopt tetrafluoroethylene, fluorinated modified monomers and ethylene; the molar percentage of tetrafluoroethylene, the fluorinated modified monomers and ethylene is (30mol%-70mol%):(5 mol%-20mol%):(20 mol%-50mol%); the fluorinated modified monomers are perfluoropropylene and / or perfluoroalkyl vinyl ethers; and the monomers that are added during the polymerization process are the mixture of tetrafluoroethylene and ethylene. The product obtained by adopting the method achieves excellent processability and optical properties, and can be used as membrane materials.

In a laser annealing process for transforming a noncrystalline semiconductor film into a laterally-crystallized film: irradiation of a region with laser light and a shift of the position of the region to be irradiated are repeated, where the shift is made so that each region to be irradiated contains a subregion of granular crystals produced by previous irradiation and a subregion of noncrystalline semiconductor material which has not yet been crystallized, and the shifted region is irradiated under such a condition that the granular crystals and the noncrystalline semiconductor material which are contained in the second region are transformed into lateral crystals without melting one or more regions of lateral crystals produced in the semiconductor film by previous irradiation.

A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer. And a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n-AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AlInN cladding layer.

A biomaterial producing method and a biomaterial produced by the same are disclosed. The method includes preparing an electrolyte by dissolving monobasic potassium phosphate (KH2PO4) and calcium chloride (CaCl2) in distilled water placed in an electrolytic bath, adjusting a concentration of calcium chloride (CaCl2) in the electrolyte, immersing titanium (Ti) as an anode and stainless steel as a cathode into the electrolyte, generating plasma by applying current and voltage to the anode and the cathode to generate arc-discharge in the titanium, and coating a surface of the titanium with a hydroxyapatite (Ca10(PO4)6(OH)2) layer through micro-arc oxidation using the plasma. The hydroxyapatite layer can be thickly formed at low cost and has improved crystallinity.

The invention relates to the field of structural control preparation of single-walled carbon nano-tubes, particularly to a macro and controllable preparation method of large-diameter and narrow-diameter distribution single-walled carbon nano-tubes. According to the present invention, the macro preparation of large-diameter single-walled carbon nano-tubes is achieved by using a floating catalyst chemical vapor deposition method, such that the macro and controllable preparation of the single-walled carbon nano-tubes with diameters of greater than 2 nm and narrow diameter distribution is achieved, wherein the diameters of more than 95% of the carbon nano-tubes are distributed within 2.1-2.7 nm, the diameters of more than 87% of the carbon nano-tubes are distributed within 2.1-2.5 nm, the single-walled carbon nano-tubes have characteristics of high purity and less impurities, the residual amount of the catalyst is less than 4.1 wt%, he single-walled carbon nano-tubes have high crystallinity, and the highest anti-oxidation temperature is 809 DEG C; the single-walled carbon nano-tube fibers spun by a liquid phase method have high electrical conductivity, provide the material basis for the research on the nanometer confinement effect of single-walled carbon nano-tubes and the singular physical and chemical properties of materials filled in tubes, and are expected to be applied to thefields of catalysis, biology, medicine and the like.

The invention discloses a core-shell type fluorine-and-silicon-containing long carbon chain acrylate water and oil repellent agent. The agent is prepared through the following steps that 1, 20%-40% by weight of monomers, 60%-80% by weight of deionized water, 1.5%-2.5% by monomer total weight of emulsifier and 1.0%-1.5% by monomer total weight of initiator are weighed, wherein the monomers are weighed according to 30%-60% by weight of fluorine-containing monomer, 5%-10% by weight of organic silicon monomer, 20%-50% by weight of long-carbon-chain-containing acrylate monomer and 5%-15% by weight of vinyl monomer, and the sum of weight percentages of the above-mentioned components is 100%; shell emulsion and core emulsion are obtained respectively, the shell emulsion and the initiator are dropwise added into the core emulsion for a reaction, and a core-shell type fluorine-containing acrylate fabric water repellent agent is obtained. The prepared water and oil repellent agent has good water and oil repellency, and the finished fabric is small in damage to hand feeling, air permeability, breaking strength and the like.

Casting polycrystalline silicon includes placing a bottomless cooling crucible divided at least partially in the axis direction into a plurality of parts in the peripheral direction and having an inner surface coated with a release agent containing nitrogen, in an induction coil of a chamber charged with an inert gas; melting a raw material of polycrystalline silicon in the bottomless cooling crucible by electromagnetic induction heating using the induction coil; and pulling out the molten silicon downward while cooling and solidifying it. Pullout of the solidified molten silicon is performed through adjusting the carbon concentration of the molten silicon to 4.0×1017 atoms / cm3 or more to 6.0×1017 atoms / cm3 or less, the oxygen concentration thereof to 0.3×1017 atoms / cm3 or more to 5.0×1017 atoms / cm3 or less, and the nitrogen concentration to 8.0×1013 atoms / cm3 or more to 1.0×1018 atoms / cm3 or less.

The invention relates to a holothurian cultivation attachment matrix. The holothurian cultivation attachment matrix is characterized by comprising more than one inverted U-shaped structure and more than four connection rods, wherein the inverted U-shaped structure is provided with four vertically opposite connection openings in the inner wall and the outer wall of a U-shaped top corner, inner and outer connection openings vertically opposite in pairs are not communicated, through holes are arranged on the top surface or two sidewalls of the inverted U-shaped structure, four side corners of the inverted U-shaped structure are respectively provided with a supporting leg, two or more inverted U-shaped structures are respectively inserted into the connection openings of an upper inverted U-shaped structure and a lower inverted U-shaped structure through an upper end and a lower end of the connection rod so that the inverted U-shaped structures are stacked together to form the holothurian cultivation attachment matrix, and the inverted U-shaped structures in pairs are provided with a gap therebtween. The holothurian cultivation attachment matrix disclosed by the invention has the advantages of simple structure, high practical value, convenience for assembly operation, time and labor saving, high holothurian collection ratio, large adjustability as required by production, increased area unit of water body cultivation, increased yield efficiency, convenient transportation and easy popularization.

An underlayer made of a III-V semiconductor compound is formed on a given substrate, and a CrSb compound is epitaxially grown on the underlayer by means of MBE method to fabricate a zinc blende type CrSb compound.

The invention discloses a plasticized polymer ionic liquid film and a method for selective separation of chromium (VI) through the same. The method comprises the steps that 1.5-2.5% of fatty amine and3.0-3.5% of polyvinyl chloride are taken as reaction raw materials to be subjected to reactive blending in 91.5-93.0% of an organic solvent, then 1.0-4.0% of a plasticizer is added, the solvent is removed through volatilization, the plasticized polymer ionic liquid film is prepared through acidification transformation, and selective separation of the chromium (VI) in chromium (VI) feed liquid isconducted through the plasticized polymer ionic liquid film under synchronous conducting of extraction and reverse extraction. A film preparation technology is simple, the using amount of a reagent issmall, and selectivity to the chromium (VI) is high; energy consumption is low in the extraction process, and secondary pollution is avoided; a film phase is not prone to leakage, a liquid film is stable in property, and the plasticized polymer ionic liquid film has the ability of continuous and repeated application; and the plasticized polymer ionic liquid film and the method can be applied to industrial application of selective removal of the chromium (VI) in the chromium-containing wastewater.

An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

The present invention discloses a preparation method of flower-shaped Cu2SnS3 flexible supercapacitor electrode materials, belongs to the technical field of synthesis and preparation of supercapacitormaterials and especially relates to a manufacturing method of flower-shaped Cu2SnS3 flexible supercapacitor electrode materials. The flower-shaped Cu2SnS3 prepared by the invention through reaction is simple in preparation method and good in crystallinity, has a large specific surface area and a small mesopore, provides more reaction active sites and shortens an ion transmission path, and shows asuperhigh specific capacity and an excellent multiplying power performance thereof in a strongly basic aqueous solution; the flower-shaped Cu2SnS3 is subjected to in-situ growth on carbon cloth to reduce the contact resistance of electrode materials; and moreover, the flower-shaped Cu2SnS3 flexible supercapacitor electrode materials themselves are high in crystallinity, high in specific capacityand good in energy density, and are a latent excellent supercapacitor electrode materials.

The invention belongs to the field of organic photoelectric materials, and particularly relates to a thiadiazolobenzotriazole near-infrared organic photoelectric small molecule as well as a preparation method and application thereof. A quinonoid receptor unit [1, 2, 5] thiadiazole [3, 4-f] benzotriazole with a strong electron deficiency characteristic is introduced into molecular design, A-D-A-D-A type thiadiazole benzotriazole near-infrared organic photoelectric small molecules are constructed, [1, 2, 5] thiadiazole [3, 4-f] benzotriazole is used as a central unit, D is a thiophene structural unit, 2-(2-methylene-3-oxo-2, 4-dioxo-1, 3, 4-thiadiazole) is used as an electron acceptor, and an electron acceptor unit is used as an electron acceptor. And 2, 3-dihydro-1H-indene-1-subunit) malononitrile is used as a terminal group, so that the band gap of molecules is effectively reduced. The preparation method is simple, the product is easy to dissolve and form a film, the extinction coefficient is high, the absorption range is over 1.2 microns, and the crystallinity is high; when the material is applied to near-infrared or wide-spectrum photoelectric detection devices, excellent performance is shown, the specific detection rate within the spectrum range of 0.4-1.2 microns can reach 10 < 11 > Jones or above, and the material has good application prospects.

The invention relates to a (CuIn)xZn2(1-x)S2 nano-particle, a preparation method and an application thereof. The nano-particle has a cubic phase and single-crystal structure; the size of nano-particleis 10-25nm; an optical band gap of the nano-particle can be continuously adjusted within 1.5-3.7eV; a value range of x is more than or equal to 0.5 but less than or equal to 1. The preparation methodcomprises the following steps: firstly taking copper acetate monohydrate, indium acetate, zinc acetate dihydrate and oleylamine as raw materials and preparing into a reaction solution; adding sulfurpowder and oleylamine solution into the reaction solution, and then reacting for 20-40min under a constant temperature at 270-290 DEG C, thereby acquiring the (CuIn)xZn2(1-x)S2 nano-particle highly dispersed in an oil phase. The nano-particle dispersed in the oil phase can be transferred into a water phase through reasonably designed surface replacement reaction, thereby endowing the (CuIn)xZn2(1-x)S2 nano-particle with extensive application prospect in the fields of hydrogen generation through water photolysis, quantum dot sensitized solar cell, bioimaging, and the like.

A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

A cathode active material precursor according to embodiments of the present invention includes nickel (Ni) and cobalt (Co) and includes an excess amount of Ni. A101 / A001 is 1 or more and I101 / I001 is 1 or more. A101 is a peak area of (101) plane, and A001 is a peak area of (001) plane by an X-ray diffraction (XRD) analysis, and I101 is a peak intensity of (101) plane, and I001 is a peak intensity of (001) plane by the XRD analysis. A cathode and a lithium secondary battery having improved crystallinity and long-term stability using the cathode active material precursor.

The invention discloses a method of increasing perovskite film crystallinity. The method comprises the following steps of mixing lead iodide and methyl ammonium iodide and then dissolving into N, N-dimethyl formamide and dimethyl sulfoxide; mixing zinc iodide and the methyl ammonium iodide and then dissolving into the N, N-dimethyl formamide; and mixing two solutions according to a certain proportion, and then through spin coating annealing, acquiring a high-quality perovskite spin coating film. Crystallinity of a perovskite layer manufactured in the invention is good, a coverage rate is high, flatness of a perovskite film surface is greatly increased, a reaction condition is easy to control, repeatability is good and equipment is simple. The method possesses good operationality. Manufacturing cost of the perovskite film is effectively reduced. And the method can be popularized and applied to actual production.

A semiconductor light emitting device of an embodiment of the present disclosure includes: a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive; an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<x1<1, 0≤x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0≤y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and a device layer including an active layer provided on the underlayer.

The invention relates to a preparation method of a polysulfide / iodine liquid flow battery electrode based on COS2-CoS n-n semiconductor junctions, which includes the following steps: adding metal cobalt salt, urea and a sulfur source into a mixed solvent of ethylene glycol and N, N-dimethylformamide; stirring the substances at room temperature; making the substances react at high temperature; cooling the reaction kettle to room temperature and carrying out centrifugal separation after reaction to obtain products; and washing the products and drying the products in vacuum to obtain black COS2,CoS2 / CoS and COS powdered products. Compared with the prior art, the electrode has high crystallinity, the construction of n-n junctions can promote the transfer of interface charges, improve the conductivity of the material, reduce polarization and improve the reversibility of catalytic performance of the material, and therefore, the electrode has high catalytic performance and good cyclic stability.

The present invention relates to preparation process of lithium aluminate backing material, and belongs to the field of material preparing technology. The present invention features that dry gel powder is first prepared with pseudoboehmite and lithium nitrate as material and through a sol-gel process, then pre-burnt and finally high temperature ignited in Li permeated corundum crucible to obtain lithium aluminate. The said process selects nanometer pseudoboehmite in high crystallinity as Al source and reaction crystal nucleus to improve the crystallinity and granularity of the lithium aluminate product, adopts sol-gel process to obtain homogeneous components of the lithium aluminate, and has high temperature ignited in Li permeated corundum crucible to inhibit the volatilization of Li.

The invention discloses a preparation method of an oxidation-resistant PPS filter material, which comprises the following steps: (1) heating and melting polyethylene terephthalate (PET) resin slices and polyacrylonitrile resin slices by a screw according to a mass ratio of (1: 1)-(1: 9), extruding, spinning, and carrying out two-component composite spinning; (2) directly carrying out dry-hot stretching on the spun silk; (3) preparing a needled felt; and (4) coating treatment. The preparation method of the bi-component fiber is adopted, PET resin serves as a skin layer, polyacrylonitrile resin serves as a core layer, the bi-component fiber is prepared through a melt spinning technology, the skin layer is made of PET, the core layer is made of polyacrylonitrile, and compared with a blended needled felt, the bi-component fiber needled felt has the advantages that in the film covering post-treatment stage, the film covering effect is good, and the film covering effect is good. And the PET of the skin layer is melted, so that the PET has good adhesion fastness with the PTFE film, and the problem of adhesion non-uniformity basically does not exist.

The invention discloses a method for preparing a supercapacitor material by alkaline hydrolysis on a cobalt aluminum double metal hydroxide. The method disclosed by the invention comprises the following specific steps: (1) dissolving a cobalt metal salt and an aluminum metal salt in a molar ratio from 1:2 to 2:1 in water to form a mixed solution, and adding a precipitating agent for reaction to prepare the cobalt aluminum double metal hydroxide; (2) adding a strong alkaline solution into the cobalt aluminum double metal hydroxide, standing at a temperature of 20-120 DEG C to obtain the supercapacitor material. The supercapacitor material prepared by the method has excellent electrochemical performance; compared with a sample not subjected to alkaline hydrolysis, the maximum discharge specific capacitance is increased from 423.5 Faraday.gram<-1> to 485.7 Faraday.gram<-1> within the potential of 0 to 0.55 volt and at the current density of 800 milliampere.gram<-1>, and after 1,250 charge-discharge cycles, the discharge specific capacitance is increased from 205.5 Faraday.gram<-1> to 263.8 Faraday.gram<-1>.