223 results about "Lead iodide" patented technology

The invention belongs to the technical field of preparation of semiconductor nanomaterials and discloses a single-size CsPbX3 perovskite nanocrystalline preparation method. The method includes: adding cesium carboxylate solution into N2 protected lead bromide solution to realize reaction for obtaining single-size CsPbBr3 perovskite nanocrystalline; scattering the single-size CsPbX3 perovskite nanocrystalline into normal hexane, and gradually adding lead chloride solution or lead iodide solution drop by drop to realize reaction for obtaining single-size CsPbBr3 perovskite nanocrystalline. The single-size CsPbX3 perovskite nanocrystalline preparation method has the advantages of simplicity in operation, easiness in size adjustment of products, component controllability and the like.

The invention provides a preparation method of perovskite quantum dots. The preparation method comprises steps as follows: A), Cs2CO3, oleic acid and octadecene are mixed and subjected to a heating reaction under the condition of protective atmosphere, and a cesium oleate precursor solution is obtained; B), lead halide and octadecene are mixed and subjected to heating and heat preservation under the condition of protective atmosphere, after an oleic acid and oleylamine mixed solution is added and heated to 170-190 DEG C, an obtained mixed solution is mixed and reacts with the cesium oleate precursor solution, and the perovskite quantum dots are obtained, wherein the lead halide is selected from one or more of lead chloride, lead bromide and lead iodide. According to the preparation method, the coordination effect of surface ligands of the perovskite quantum dots of different halide ions directly synthesized at a higher temperature is more remarkable, so that stability and fluorescence quantum efficiency of the synthesized perovskite quantum dots are both guaranteed.

The invention provides a method for preparing a perovskite layer of a perovskite solar cell by using solid-mist interfacial reaction and belongs to the technical field of organic metal halide perovskite solar cells. In view of disadvantages of poor perovskite coverage rate and poor repeatability of an organic metal halide perovskite solar cell prepared by the prior art, the method prepares a lead iodide solid-phase membrane by means of a spin-coating method, and then enables an organic halide solution to be atomized to form solution mist to react with solid-mist-phase interface, thereby forming an organic metal halide layer with perovskite structure. The perovskite layer prepared through the method is good in crystallinity and high in coverage rate, and may improve the photoelectric conversion efficiency of the perovskite solar cell. The method is short in reaction time, easy to control in reaction condition, simple in equipment, good in maneuverability, good in repeatability, suitable for being popularized and applied in real production.

A method for aerosol jet printing a layered perovskite structure comprises applying a PEDOT:PSS layer to a substrate; applying a layer of lead iodide (PbI₂) to the PEDOT:PSS layer; and applying an aerosol mist of methylammonium iodide (CH₃NH₃I) atop the PbI₂ layer with an aerosol jet nozzle to form a CH₃NH₃PbI₃ perovskite film layer. The substrate may be an ITO glass substrate, and the PEDOT:PSS layer may be applied by a process selected from spin-coating, inkjet-printing, slot-die-coating, aerosol jet printing, physical vapor deposition, chemical vapor deposition, and electrochemical deposition. The PbI₂ layer may be applied by a process selected from spin-coating, aerosol jet printing, inkjet-printing, slot-die-coating, physical vapor deposition, chemical vapor deposition, and electrochemical deposition, and the PbI₂ for application to the PEDOT:PSS layer may be in a solution of DMF, DMSO, γ-butyrolactone, or a combination thereof. The annealing of the PbI₂ layer may be performed at about 80° C. or lower.

The invention relates to an inorganic nonlinear optical material lead iodo-borate crystal, and a preparation method and application thereof, belonging to the field of inorganic chemistry as well as the field of material science. The chemical formula of the lead iodo-borate crystal is Pb2B5O9I, and the molecular weight is 739.35; the lead iodo-borate crystal belongs to an orthorhombic crystal system and a space group Pnn2; and the unit cell parameters are as followings: alpha = 90 DEG, beta = 90 DEG, gamma = 90 DEG, and Z = 4. The lead iodo-borate crystal is synthesized by a one-step self fluxing method, which comprises the following steps: mixing lead raw materials consisting of oxide, lead iodide and boron oxide with self flux consisting of PbO and B2O3 which are 50-150% excess, wherein the molar ratio of of PbO:PbI:B2O3 is 3:1:5; adding the mixture to a vacuum sealed container; insulating heat at 700-900 DEG C for 5-48 hours; and slowly cooling to room temperature at the speed of lower than 10 DEG C/hour to obtain an end product lead iodo-borate crystal. The lead iodo-borate crystal has excellent nonlinear optical performance, and the second harmonic generation (SHG) coefficient of the crystal powder is 1.4 times that of KTP (kalium titanium phosphate).

The invention belongs to the technical field of preparation of optoelectronic materials and particularly relates to a copper-doped red-light perovskite quantum dot and a preparation method thereof. According to the method, a cesium salt or a formamidine salt, copper acetate, lead bromide and lead iodide are adopted as raw materials, organic acids and organic amine are adopted as ligands, and the stable and efficient copper-doped red-light perovskite quantum dot processable in solutions are rapidly synthesized through a thermal injection method. The stability of the red-light perovskite quantumdot is greatly improved through copper doping, and meanwhile, it is ensured that the high-fluorescence quantum efficiency of the quantum dot approaches 90%. According to the quantum dot, the absorption wavelength is increased along with the increase of the doping amount of copper, and a blue shift phenomenon of corresponding fluorescence emission wavelength of the quantum dot occurs. Obtained red-light perovskite quantum dot powder has high stability and can still be stored for more than 15 days under the condition that the air humidity is higher than 85%. The preparation method is simple andenvironmentally friendly, and the obtained red-light perovskite quantum dot can be applied to photoelectric devices such as light-emitting diodes, photoelectric detectors, laser devices and solar cells.

The invention discloses a method for inducing crystallization orientation of a perovskite thin film. A preparation method of the perovskite thin film comprises steps as follows: a substrate is spin-coated with a precursor solution at the rotating speed of 3,000-4,000 rpm and annealed at the temperature of 100-110 DEG C for 30-60 s, wherein the precursor solution is formed as follows: PbI2 and MAClin the molar ratio being 1:1 are firstly dissolved in a mixed solvent of DMF (dimethylformamide) and DMSO (dimethyl sulfoxide) in the volume ratio being 1:1 and then stirred at the room temperature for 2 h, and the final molar concentration of the precursor solution is 1.0-1.2 mol/L. Organic metal halide is used for inducing crystallization orientation of the perovskite thin film, the perovskitethin film with good film properties is obtained for preparation of a reversal planar perovskite solar cell device, and the photoelectric conversion efficiency of the solar cell device is effectively improved.

An imaging composition for radiation detection systems which includes an admixture of at least one non-heat treated, non-ground particulate semiconductor with a polymeric binder. The non-heat treated, non-ground particulate semiconductor is selected from mercuric iodide, lead iodide, bismuth iodide, thallium bromide and cadmium-zinc-telluride (CZT), and at least 90% of the semiconductor particulates have a grain size of less than 100 microns in their largest dimension. A radiation detector plate (10) for an imaging system includes a substrate (12) which serves as an electrode, at least one imaging composition layer (16) applied onto the substrate (12), and a second electrode (18) which is in electrical connection with the imaging composition (16) and connected (20, 22) to a high voltage bias.

The present invention relates to a preparation method of dimension-controllable CsPbX3 perovskite nanometer crystals, and belongs to the technical field of preparation of a semiconductor nanomaterial.The method comprises: firstly, adding a cesium carboxylate solution to a lead bromide solution in N2 protection for a reaction, thereby obtaining CsPbBr3 perovskite nanometer crystal seeds; then, dispersing CsPbBr3 perovskite nanometer crystal seeds in hexane, injecting the obtained product to octadecene at different temperature to obtain CsPbBr3 perovskite nanometer crystals with different sizes; and finally, dispersing CsPbBr3 perovskite nanometer crystals in hexane, and gradually adding a lead chloride solution or a lead iodide solution drop by drop for a reaction to obtain other CsPbX3 (X=Cl, Ir) perovskite nanometer crystals. The method is simple to operate, the size of products is easy to adjust, and the components are controllable.

The invention provides a method for preparing a flexible perovskite solar cell at a low temperature, and belongs to the technical field of solar cells. The method re-adjusts a preparation process without introducing additional additives, and comprises the steps of preparing a precursor solution by mixing excess lead iodide and formamidine iodide; during the spin-coating film-forming process of the precursor solution, adding methyl bromide in a spinning drop manner, and then performing low-temperature annealing to prepare a perovskite light absorbing layer. The method solves the problem that in the existing formamidine lead iodide preparation system,the perovskite solar cell has over-high annealing temperature and cannot be applied to a flexible substrate, or has over-low annealing temperature so as to cause low battery efficiency. The preparation method is friendly to environment, simple, and low in cost, and contributes to the high-efficiency preparation of flexible perovskite solar cells and the industrialization of perovskite solar cells.

The invention provides a manufacturing method of a large-area perovskite solar cell. The method comprises the steps of making a line on FTO glasses by laser, preparing a cavity transmission layer, preparing lead iodide or lead chloride in a first evaporating chamber, preparing methyl amine iodine in a second evaporating chamber, forming a perovskite film through reaction, preparing an electronic transmission layer by a spray method, making a line P2 by laser, preparing a metal electrode, and making a line P3 by laser to form a large-area perovskite component. The invention also provides a manufacturing system of a large-area perovskite solar cell. The system comprises a sample introduction chamber, the first evaporating chamber, the second evaporating chamber, a cavity transmission layer preparation room, and a metal electrode preparation room. The large-area uniformity and preparation rate of the perovskite solar cell can be greatly improved.

The invention provides a method for improving the efficiency of a perovskite solar cell. The method comprises the following steps: depositing a layer of lithium-magnesium heavily doped nickel oxide asa hole transport layer on an ITO glass substrate; then respectively spin-coating the surface with a perovskite precursor solution A and a doped precursor solution, wherein the perovskite precursor solution A is prepared by adding methylamine iodine and lead iodide into a DMF solvent and uniformly mixing, and the doped precursor solution is prepared by adding bismuth nitrate, potassium bromide anda guanidyl catalyst into a perovskite precursor solution B prepared from methylamine iodine, lead iodide and a DMF solvent. According to the method provided by the invention, a perovskite absorptionlayer with a double-layer structure is formed by adding a secondary growth process on the basis of an original crystal growth process, so that the carrier transfer efficiency in perovskite is effectively improved, and the photoelectric conversion efficiency of the solar cell is improved.

The invention discloses a method for preparing a doped perovskite thin film battery by dissolving lead iodide at a room temperature. A battery structure sequentially comprises a conductive substrate 1, an electron transport layer 2, a doped perovskite absorption layer 3, a hole transport layer 4 and a top electrode 5 from bottom to top, wherein the doped perovskite absorption layer is prepared by first dissolving ammonium chloride and lead iodide in a DMF solvent according to a certain mole ratio and performing vibration for 2-3 minutes at the room temperature, then spin-coating the mixture on a substrate, and finally depositing an organic halide (MAI, FAI or MAI/FAI mixture) by a CVD (Chemical Vapor Deposition) reaction or spin-coating the organic halide by a solution method. The perovskite thin film battery is prepared by using the ammonium chloride to help dissolve the lead iodide, thus, the lead iodide can be effectively prevented from being difficult to dissolve or a crystal can be effectively prevented from being easy to separate out in the spin-coating process, a metastable state in the preparation process of a polar solvent is prevented, the preparation of a thin film is facilitated, perovskite nucleation growth is facilitated, and the battery conversion efficiency is improved; and moreover, a large-area perovskite thin film battery can be prepared at the room temperature.

The present invention belongs to the field of solar cells, and in particular to an organic-inorganic hybrid perovskite solar cell. The photosensitive layer of the bromine doped methylamine lead iodine perovskite solar cell is a bromine-doped methylamine lead iodine perovskite CH3NH3PbI3-XBrx film formed by the mixing and dissolving of methyl iodized amine CH3NH3I and iodized lead PbI2 in N, N-dimethylformamide DMF and dimethyl sulfoxide DMSO mixed solvent to develop the CH3NH3PbI3 perovskite precursor solution, and then formed by spin-coating and cleaning processes combined with multi-step atmosphere annealing process. In the CH3NH3PbI3-XBrx film, the value of the bromine content x is between 0.2 and 0.6. The invention also relates to a method of manufacturing the solar cell.

The invention relates to the technical field of monodisperse powdery material preparation and provides a monodisperse high-purity lead iodide preparation method. The preparation method comprises the steps of preparing a lead salt solution and a soluble iodate solution and adjusting a pH as 0.5 to 7; performing precipitation reaction on the lead salt solution and the soluble iodate solution in a contact mode to obtain precipitate turbid liquid of lead iodide; ageing for 1 to 48 hours at room temperature and filtering, washing and drying to obtain a high-purity lead iodide powder product. The preparation method disclosed by the invention has the beneficial effects of simpleness in operation, high purity, stable and reliable quality and easiness in expanding preparation in large scale.

The invention provides a perovskite material, an application thereof on a solar cell and a preparation method of the solar cell. The preparation method comprises the steps of dissolving a precursor material of methyl ammonium iodide, lead iodide, tin iodide or copper bromide or a precursor material of methyl ammonium iodide, lead iodide and copper bromide into a mixed solvent of gamma-butyrolactone and dimethyl sulfoxide to prepare a perovskite solution; using TiO2 prepared at a low temperature to serve as a cathode transmission layer; processing the ternary lead-tin-copper perovskite solutionto the cathode transmission layer, and then processing 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene to a junction light sensing layer to obtain a hole transport layer; and thendepositing an anode electrode so as to obtain an efficient and environment-friendly perovskite solar cell. The obtained perovskite solar cell is high in energy conversion efficiency, environment-friendly, simple in process and good in perovskite crystal characteristic.

Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb₃O₂I₂. The scintillator nanoparticles can comprise PbIOH in generally equiatomic proportions or non-equiatomic variants thereof that exhibit scintillation under gamma irradiation. The scintillator nanoparticles have a particle dimension in the range of about 5 to about 100 nm. Microparticles (microcrystals) also are provided comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) grown in a nanoparticle colloidal solution over time to a particle dimension greater than 0.1 μm, such as about 2 microns.

The invention relates to a preparation method for a thin titanium dioxide layer of a perovskite cell. The preparation method comprises the steps that tetra-n-butyl titanate serves as a titanium source, and is added to a solution according to the volume ratio of 1:10, the volume ratio of concentrated hydrochloric acid to deionized water in the solution is one to one, gradient hydrolysis is achieved, and therefore a titanium dioxide nano flower-shaped series with a multi-level structure is prepared through a hydrothermal method; colloid titanium dioxide uniformly coats a conductive glass sheet in a spin mode through a spin coating method, high-temperature calcination is conducted, and a dense titanium dioxide film coating is formed; a lead iodide solution and an ammonium methyl iodide solution coat the titanium dioxide coating in a spin mode in sequence, drying is conducted after a uniform coating is formed, and therefore a methylammonium lead iodide perovskite layer is obtained. Due to control over the thickness of the dense titanium dioxide layer, perovskite nanocrystalline which is wide in photoresponse range and high in photoresponse can be prepared, light scattering is enhanced, capture of light is improved, the utilization ratio of sunlight is increased, and therefore a construction technology of a solar cell with the low cost and high conversion efficiency is implemented.

The invention provides a perovskite solar cell taking graphdiyne-induced crosslinking fullerene in-plane orientation as an electron transmission layer and a preparation method of the perovskite solarcell. The preparation comprises the following steps of preparing a perovskite solution from methyl iodide and lead iodide in a mixed solvent of Gamma-butyrolactone and dimethyl sulfoxide; dispersing atwo-dimensional material graphdiyne and a compound PCBSD in chlorobenzene to prepare a negative electrode transmission layer; processing the perovskite solution on the negative electrode transmissionlayer, and processing 2, 2', 7, 7'-quadri[N, N-bi(4-methoxyphenyl)amino]-9, 9'-spirobifluorene on a junction light-sensitive layer to obtain a hole transmission layer; and depositing a positive electrode, thereby obtaining the high-efficiency and stable perovskite solar cell. The perovskite solar cell obtained by the invention is high in energy conversion efficiency, simple in process and low incost and has good photovoltaic characteristic.

The invention provides a light absorption material of perovskite crystal of methyl amino lead iodide bismuth (for short methylamine bismuth lead iodine) and a preparation method thereof. A general formula is CH3NH3BixPb1-xI3, wherein x is 0.01-1. The crystal of the perovskite crystal light absorption material formed calcining the material under the condition of water-insulation and oxygen-insulation has the same crystal structure and similar light absorption performance of methylamine iodine lead CH3NH3PbI3. The method uses bismuth atom to substitute lead atom in CH3NH3PbI3 effectively, and the crystal structure is not changed. The lead content is reduced effectively by means of controlling the raw material ratio of bismuth to lead. The crystal material with perovskite structure of methylamine bismuth lead iodine CH3NH3BixPb1-xI3 prepared by the invention can be used for substituting the crystal material of methylamine lead iodine CH3NH3PbI3 which is used as an absorbed layer of a perovskite solar cell. Moreover, the material stability can be improved effectively, the lead content can be reduced, and the material toxicity can be reduced.