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Method for preparing perovskite film based on anti-solvent dynamic spin-coating

A perovskite and anti-solvent technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of fine grains of perovskite thin films, and achieve the effect of flat and dense surface and reduced loss.

Active Publication Date: 2018-10-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method can effectively control the crystallization process of perovskite so that the perovskite film layer has good compatibility with the mesoporous substrate, but the prepared perovskite film has fine grains.

Method used

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  • Method for preparing perovskite film based on anti-solvent dynamic spin-coating
  • Method for preparing perovskite film based on anti-solvent dynamic spin-coating
  • Method for preparing perovskite film based on anti-solvent dynamic spin-coating

Examples

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Embodiment 1

[0034] A method for preparing a perovskite film based on anti-solvent dynamic spin coating, specifically comprising the following steps:

[0035] Step 1. Clean the substrate:

[0036] 1.1 will bring TiO 2 The FTO conductive glass of the electron transport layer was ultrasonically cleaned in acetone, alcohol, and water for 20 minutes respectively, and dried in a vacuum drying oven;

[0037] 1.2 For the treated TiO in the previous step 2 The FTO conductive glass of the electron transport layer is subjected to 20min UV-ozone treatment to increase the hydrophilicity of the substrate;

[0038] Step 2, take lead iodide as solute, DMF as solvent, stir 12h, prepare the lead iodide solution that mass concentration is 0.416g / mL; 3 NH 31, MAI) as solute, isopropanol as solvent, stir 12h, preparation obtains the isopropanol solution that mass concentration is the iodomethylamine of 50mg / mL;

[0039] Step 3. Place the lead iodide solution prepared in step 2 on a heating and stirring t...

Embodiment 2

[0042] According to the steps of Example 1, the perovskite film was prepared, and the time of adding the isopropanol solution of MAI was set as: after spin coating 0s, 5s, 15s, 20s, 25s, and 30s, the isopropanol of methyl iodide was added dropwise solution. The SEM of the perovskite film that embodiment 2 obtains is as figure 2 shown.

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Abstract

The invention provides a method for preparing a perovskite film based on anti-solvent dynamic spin-coating. An organic solvent capable of dissolving lead iodide and a solvent which cannot dissolve theperovskite material and can dissolve with the lead iodide solvent and can dissolve CH3NH3I(MAI) are selected to act as the anti-solvent (e.g. isopropyl alcohol); and the isopropyl alcohol solution ofMAI is dropped in the process of spin-coating the DMF solution of the lead iodide, the crystalline condition of the perovskite film can be controlled by controlling the drop dosage and the drop timeof the isopropyl alcohol solution of MAI and finally the high-quality perovskite film can be obtained. With application of the method, the surface of the perovskite film grown on the rough mesoporoussubstrate is smooth and compact without pin hole and the grain size can be several microns so that the loss of the carriers on the grain boundary can be greatly reduced and application of the perovskite material in the photoelectric field can be facilitated.

Description

technical field [0001] The invention relates to a method for preparing a perovskite film, in particular to a method for preparing a perovskite film based on anti-solvent dynamic spin coating. Background technique [0002] Organic-inorganic hybrid perovskite materials (CH 3 NH 3 PBX 3 ,X=Cl,Br,I), as an emerging photovoltaic semiconductor material, has excellent optoelectronic properties such as direct band gap, high light absorption coefficient, high carrier mobility and free path. Since Japanese scientist Miyasaka first applied organic-inorganic composite halide perovskite materials to the field of optoelectronics in 2009, this type of new optoelectronic materials has gradually entered the field of vision of researchers and has ushered in the peak of attention in recent years. In particular, the conversion efficiency of perovskite-based solar cells based on this material was refreshed to 23% in 2018, surpassing the current commercialized single-crystal silicon-based sola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCH10K71/15H10K71/12Y02E10/549
Inventor 熊杰孙浩轩杜新川晏超贻邬春阳戴丽萍
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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