371 results about "Telluride" patented technology

A low temperature chemical route to efficiently produce nanomaterials is described. The nanomaterials are synthesized by intercalating ions into layered compounds, exfoliating to create individual layers and then sonicating to produce nanotubes, nanorods, nanoscrolls and / or nanosheets. It is applicable to various different layered inorganic compounds (for example, bismuth selenides / tellurides, graphite, and other metal complexes, particularly transition metal dichalcogenides compounds including oxygen, sulfur, tellurium or selenium).

A zinc ion-exchanging battery device comprising: (A) a cathode comprising two cathode active materials (a zinc ion intercalation compound and a surface-mediating material); (B) an anode containing zinc metal or zinc alloy; (C) a porous separator disposed between the cathode and the anode; and (D) an electrolyte containing zinc ions that are exchanged between the cathode and the anode during battery charge / discharge. The zinc ion intercalation compound is selected from chemically treated carbon or graphite material having an expanded inter-graphene spacing d002 of at least 0.5 nm, or an oxide, carbide, dichalcogenide, trichalcogenide, sulfide, selenide, or telluride of niobium, zirconium, molybdenum, hafnium, tantalum, tungsten, titanium, vanadium, chromium, cobalt, manganese, iron, nickel, or a combination thereof. The surface-mediating material contains exfoliated graphite or multiple single-layer sheets or multi-layer platelets of a graphene material.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.

The invention relates to a plumbum telluride (PbTe) or graphene nanocomposite material and a preparing method thereof. The plumbum telluride (PbTe) or graphene nanocomposite materiall is characterized by the following steps: using a compound of plumbum (Pb) and a compound of tellutide (Te) as raw materials, respectively dissolving the two compounds into deionized water according to the stoichimetric ratio of the plumbum telluride (PbTe), preparing a solution containing plumbum and a solution containing tellutide (Te) with same concentration from 0.01 mole per liter to 0.1mole per liter; dissolving graphite oxide into the deionized water, performing ultrasound for 0.5 hours to 2 hours, preparing a graphite oxide solution with a concentration from 0.5 milligram per mini liter to 2 milligrams per mini liter; adding the graphite oxide solution into the solution containing plumbum, performing ultrasound for 0.5 hours to 2 hours, adding the solution containing tellutide, adjusting potential of hydrogen (pH) to be 9 to 12 by adding strong alkali, adding reducing agent, sealing membrane, placing in warm water bath, reacting with stirring for 8 hours to 24 hours at the temperature between 60DEG C and 100DEG C, collecting products, washing by deioniaed water, drying, and obtaining the plumbum telluride (PbTe) or graphene nanocomposite material; and adding the graphite oxide at 1%-30% of the theoretical mass of the plumbum telluride (PbTe). The plumbum telluride (PbTe) or graphene nanocomposite material and thepreparing method thereof has the advantages of simple technology, low cost and the like and having small plumbum telluride (PbTe) particles with 20 nanometers to 60 nanometers and wide application prospect.

The invention belongs to the technical field of the preparation of the semiconductor material and particularly discloses a method for preparing copper-sulfur compound nano-crystals with controllable morphology based on a chemical vapor deposition method. The method adopts the chemical vapor deposition method, the temperature and pressure of the reaction system and the product collection area are controlled to prepare different morphologies of copper-sulfur compounds such as copper sulfide nano-crystals, copper sulfide nano-rods, copper sulfide nano-sheets and copper sulfide nano-flower-cluster. The method comprises the following specific steps: (1) injecting a solid precursor; (2) controlling the pressure and temperature of the system and injecting a gaseous precursor; and (3) collecting the product. The copper-sulfur compounds prepared by the method are characterized by good monodispersity, high sample purity and the like. The method can also be used to prepare other metal semiconductors such as sulfides, selenides and tellurides; and by changing the reaction conditions of the system, the morphology of the product is regulated and then applied in fields such as the preparation of functional semiconductor elements, photoelectric conversion and catalysis.

The invention discloses a cadmium telluride thin-film solar cell back contact layer production method, and the production process is carried out in the vacuum environment. The steps are as follows: a substrate is preheated to 160 DEG C to 220 DEG C; after the substrate is heated to 230 DEG C to 320 DEG C, the magnetron sputtering of antimony telluride is carried out; after the substrate is cooled to 80 DEG C to 120 DEG C, the sputtering of nickel-vanadium alloy is carried out; and the substrate is cooled to less than 70 DEG C and then discharged. The coating of a cadmium telluride thin-film solar cell back contact layer produced by the method is uniform, and the number of pinholes is less. The invention also discloses a vertical coater which adopts the method to produce cadmium telluride thin-film solar cell back contact layers, the vertical coater comprises but is not limited to a preheating chamber, a temperature-keeping antimony telluride deposition chamber, a nickel-vanadium alloy deposition chamber, a temperature-decreasing discharge chamber, a vacuum system and the like which are connected in series through vacuum valves, and the vertical coater can simultaneously coat both sides of the substrate, enlarge the effective region of the coating and increase the production efficiency, and is easy to overhaul.