103results about How to "Surface roughness" patented technology

The present invention relates to materials, methods and apparatuses for performing imprint lithography using amorphous metallic materials. The amorphous metallic materials can be employed as imprint media and thermoplastic forming processes are applied during the pattern transfer procedure to produce micron scale and nanoscale patterns in the amorphous metallic layer. The pattern transfer is in the form of direct mask embossing or through a serial nano-indentation process. A rewriting process is also disclosed, which involves an erasing mechanism that is accomplished by means of a second thermoplastic forming process. The amorphous metallic materials may also be used directly as an embossing mold in imprint lithography to allow high volume imprint nano-manufacturing. This invention also comprises of a method of smoothening surfaces under the action of the surface tension alone.

An optically transparent, electrically conductive hybrid film includes a carbon nanotubes network deposited on a substrate, and a population of transparent conductive inorganic nanoparticles distributed throughout the carbon nanotubes network to provide a conductive transparent hybrid film.

Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.

A composition and method for electroplating a metal on a substrate. The composition has a chloride to brightener concentration ratio of from 20:1 to 125:1. The method of electroplating, which employs the composition, employs pulse patterns that improve physical properties of metal surfaces.

It is an object of the present invention to provide a light emitting element with reduced inconvenience due to dust or the like and a manufacturing method thereof. One feature of the invention is a light emitting element having a first layer provided so as to be in contact with a first electrode, and a second layer provided so as to be in contact with the first layer, between the first electrode and a second electrode. A light emitting layer exists between the second layer and the second electrode. The first electrode, the second electrode, the first layer, the second layer, and the light emitting layer are stacked so that the first layer is formed in advance compared with the second layer. Here, the first layer is a layer containing an organic compound. Especially, an organic compound having conductivity is preferable among organic compounds. Alternatively, the second layer is a layer containing an inorganic compound. In particular, an inorganic compound having hole transport property is preferable among inorganic compounds.

A physical quantity detecting device includes a metal block (a holding section) having six surfaces, inclination detectors (physical quantity detectors) respectively arranged on selected three surfaces among the six surfaces, an electronic component electrically connected to the inclination detectors, and a heat insulating material (a heat-conduction reducing section) present between the metal block and the electronic component and having thermal conductivity smaller than the thermal conductivity of the metal block.

In a method of forming a holographic grating, a photoresist layer is formed on an optical substrate, and a resist pattern is formed in the photoresist layer to have grooves depth deeper than a predetermined depth of diffraction grating grooves to be formed. Then, the photoresist layer with the resist pattern is etched by an ion beam generated by a mixed gas containing a fluorine based gas and oxygen until the resist pattern is substantially completely disappears. Thus, the diffraction grating grooves having the predetermined depth are directly engraved on the optical glass plate.

A method includes the steps of providing a first tape base material on a single side of a stiffener substrate, forming, on the stiffener substrate, a cavity for accommodating a semiconductor chip therein, inserting the stiffener substrate in the cavity and providing the stiffener substrate on the first tape base material, sealing the semiconductor chip and the stiffener substrate with a sealing resin, and removing the first tape base material and forming a build-up layer on a tape removing surface.

A method and device for reducing sulfidation corrosion and depositional fouling in heat transfer components within a refining or petrochemical facility is disclosed. The heat transfer components are formed from a corrosion and fouling resistant steel composition containing a Cr-enriched layer and having a surface roughness of less than 40 micro inches (1.1 μm).

MEMS and microelectronic devices and fabrication methods feature providing a first material including a glass, providing a second material having an elastic modulus greater than the elastic modulus of silicon, causing the second material to have a surface with a RMS surface roughness of greater than 0.001 μm and less than approximately 0.15 μm, contacting the surface of the second material to a surface of the first material, and applying a voltage between the first and second materials to cause an anodic bond to form.

This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and / or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaixial layers. Finally, a GaAs epitaixial layer is grown on said Ge film by using MOCVD.

A retainer ring is provided which is capable of, effectively in practice, restraining the time taken for a break-in polish to the minimum. This retainer ring 8: is disposed inside of a holding head 4 in a CMP apparatus 1 which polishes a wafer W chemically and mechanically; has a ring shape so as to surround the periphery of the wafer W; presses a polish surface 3a of a polish pad 3; is made of an engineering plastic material such as PPS; and has a pressure surface 8a for pressing the polish surface 3a of the polish pad 3 whose surface roughness is a center-line average roughness (Ra) of 0.01 μm or below.

A steam turbine blade includes a coating film formed at least a portion of a surface of the steam turbine blade, the coating film containing a ceramic matrix and nanosheet particles dispersed in the ceramic matrix. The steam turbine blade is employed as one of stator blades or one of rotor blades in a steam turbine. The steam turbine includes a turbine rotor, the rotor blades implanted in the turbine rotor, the stator blades provided in an upstream side of the corresponding rotor blades, and a turbine casing supporting the stator blades and accommodating turbine rotor, the rotor blades and the stator blades. The steam turbine is also configured such that the rotor blades are paired with the corresponding stator blades to form turbine stages arranged in an axial direction of the turbine rotor, thereby forming steam paths.

A device for the production of a metallic strip using a rapid solidification technology is specified, which device includes a movable heat sink with an external surface onto which a melt is poured and on which the melt solidifies to produce the strip, and which device includes a rolling device which can be pressed against the external surface of the movable heat sink while the heat sink is in motion.

A method includes the steps of providing a first tape base material on a single side of a stiffener substrate, forming, on the stiffener substrate, a cavity for accommodating a semiconductor chip therein, inserting the stiffener substrate in the cavity and providing the stiffener substrate on the first tape base material, sealing the semiconductor chip and the stiffener substrate with a sealing resin, and removing the first tape base material and forming a build-up layer on a tape removing surface.

In a roller type transmission device 1, an array 11 of transmission pin rollers is press fit circularly into an inner side surface 10a of a stationary ring 10, and an array 18 of controllable pin rollers is press fit circularly into an inner side surface 13c of a rotational ring 13. To pin rollers 11a, 18a, employed are high precision cylindrical rollers or needle rollers which are usually used for a roller bearing or the like. Such is the structure that the array 11 of transmission pin rollers and the array 18 of controllable pin rollers work as inner teeth to make a backlash phenomenon minimum, rendering a pitch distance precise between the pin rollers, maintaining a uniform tooth profile with a high precision, equalizing a surface roughness and improving a meshing precision between the pin rollers 11a, 18a and the teeth 7a, 8a.

A method for preparing a palladium-gold alloy gas separation membrane system comprising a gold-palladium alloy membrane on a porous substrate coated with an intermetallic diffusion barrier. The method includes an abrading step to increase surface roughness of the palladium to a desired range, a gold plating step with a solution of chloroauric acid (AuCl4H) and hydrogen peroxide, followed by annealing to produce a palladium-gold alloy membrane.

An apparatus for forming a film on a wafer comprising, a first coating apparatus coating a foaming insulation film material on the wafer, a second coating apparatus coating a non-porous insulation film material on the wafer, a low oxygen heating temperature regulating process apparatus performing a heating process on the wafer on which the foaming insulation film material is coated, a low oxygen high temperature heating process apparatus performing the heating process on the water on which the non-foaming insulation film material is coated, a transfer mechanism transferring the wafer to these apparatuses, and a selecting means selecting a path to which the wafer is transferred corresponding to the film formed on the wafer.

A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.

Disclosed herein is a touch panel including: a transparent substrate; and a bezel part including a white layer formed at one-side edge of the transparent substrate and a light-shielding layer formed on the white layer, wherein the bezel part has a narrow width and a thin thickness, thereby implementing a display screen larger than that of the other touch panels having the same exterior size and providing the touch panel including the white-colored bezel part having a thin thickness and a uniform and sufficient color.

The present invention relates to a magnetic head substrate comprising a sintered body containing 35% by mass to 60% by mass of alumina and 40% by mass to 65% by mass of a conductive compound. The conductive compound contains at least one selected from carbide, nitride and carbonitride of tungsten. The sintered body has a maximum crystal particle size of 4 μm or less (except for 0 μm). Furthermore, the present invention provides a magnetic head provided with a slider formed of the magnetic head substrate and a recording medium driving device provided with the magnetic head.

A method for producing a composite piezoelectric body includes: forming a composite piezoelectric body by filling a non-conductive polymer between a plurality of piezoelectric materials arranged in an array state at predetermined intervals, and polishing one surface of the composite piezoelectric body, from which surface at least the piezoelectric materials and the polymer are exposed, by using an abrasive film in which an abrasive particle is applied to a base film.

A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a polishing pad comprising at least one layer having compressibility of 5% or below in a base layer of the polishing pad.

In a roller type transmission device 1, an array 11 of transmission pin rollers is press fit circularly into an inner side surface 10a of a stationary ring 10, and an array 18 of controllable pin rollers is press fit circularly into an inner side surface 13c of a rotational ring 13. To pin rollers 11a, 18a, employed are high precision cylindrical rollers or needle rollers which are usually used for a roller bearing or the like. Such is the structure that the array 11 of transmission pin rollers and the array 18 of controllable pin rollers work as inner teeth to make a backlash phenomenon minimum, rendering a pitch distance precise between the pin rollers, maintaining a uniform tooth profile with a high precision, equalizing a surface roughness and improving a meshing precision between the pin rollers 11a, 18a and the teeth 7a, 8a.

The invention relates to a method for separating workpieces, in particular forged tins, by means of at least one driving device and one clamping device, in which the work piece is maintained, whereby the work piece is cut through by means of at least one sawing device. According to the method, the workpiece may be rotatably driven in relation to the sawing device, for the separation thereof.

In a gear mechanism that includes a gear in which a tooth trace is twisted at a predetermined angle with respect to an axial direction, a curvature radius along a line of contact at a meshing position where a line of contact does not intersect a pitch circle is formed larger than a curvature radius along a line of contact at a meshing position where a line of contact intersects a pitch circle, on a plane of action of the gear.