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103results about How to "Surface roughness" patented technology

Reverse pulse plating composition and method

InactiveUS20050016858A1Improve performanceLong operate lifeJewelleryElectroplatingChloride
A composition and method for electroplating a metal on a substrate. The composition has a chloride to brightener concentration ratio of from 20:1 to 125:1. The method of electroplating, which employs the composition, employs pulse patterns that improve physical properties of metal surfaces.
Owner:SHIPLEY CO LLC

Physical quantity detecting device, electronic apparatus, and moving object

A physical quantity detecting device includes a metal block (a holding section) having six surfaces, inclination detectors (physical quantity detectors) respectively arranged on selected three surfaces among the six surfaces, an electronic component electrically connected to the inclination detectors, and a heat insulating material (a heat-conduction reducing section) present between the metal block and the electronic component and having thermal conductivity smaller than the thermal conductivity of the metal block.
Owner:SEIKO EPSON CORP

Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer

This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD).
The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate.
Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaixial layers. Finally, a GaAs epitaixial layer is grown on said Ge film by using MOCVD.
Owner:NAT CHIAO TUNG UNIV
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