384results about How to "Improve work function" patented technology

A combined information display and information input device comprising a matrix of independently addressable light emitting devices and a plurality of light sensing devices, the light emitting devices comprising organic light emitting diodes comprising organic light emitting material positioned between a low work function electrode and a high work function electrode characterized in that the light sensing devices comprise organic photovoltaic devices comprising at least an organic electron donor and at least an organic electron acceptor positioned between a high work function electrode and a low work function electrode. The combined information display and information input device has application as a touch screen, for example for a mobile communication device.

It is an object to provide an organic light-emitting element having two or more light-emitting layers, wherein degradation of each constituent material for the light-emitting layer is reduced to improve reliability of the element. The present invention provides an organic light-emitting element having a laminated structure with a first mixed light-emitting layer 4 composed of a hole transport material, an electron transport material and a dopant which determines a color of an emitted light, and a second mixed light-emitting layer 5 composed of a hole transport material, an electron transport material and a dopant which determines a color of an emitted light, and also provides an image display device which uses the organic light-emitting element.

Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implanted into the metal layer in one active area to form an implanted metal layer which is silicided to form a metal silicide layer. Thereafter, the metal layer and the metal silicide layer are patterned to form a metal gate in one active area and a metal silicide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal silicide gates wherein the silicon concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate. A metal layer is deposited over a gate dielectric layer within the gate openings to form metal gates. One or both of the gates are silicon implanted and silicided. The PMOS gate has the higher work function.

A light emitting device having superior responsibility is provided. A pixel electrode (anode) connected to a drain wiring of an current control TFT has a slit. The slit becomes a path for light emitted from an EL layer, and emitted light can be extracted using a light shielding metallic film as the pixel electrode. A material having a low resistance can thus be used as the pixel electrode, and therefore a light emitting device having superior responsibility can be obtained.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

The addition of a highly polarizable additive such as an organic anionic surfactant to an electrically active polymer improves the electrical properties of the polymer. When such an additive is added to an electroluminescent organic polymer this mixture can be used in diodes having an anode contacting a layer of this mixture as the active light-emitting layer and an air-stable metal cathode having a work function larger than 4 eV. The external efficiency and brightness versus voltage are significantly improved compared to results obtained with the same electroluminescent polymer used alone with high work function (>4.0 eV) metal cathodes. Specifically, device performance with indium / tin-oxide (ITO) as the anode, poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene), MEH-PPV, as the electroluminescent polymer, lithium nonylphenoxy ether sulfate as the surfactant additive and aluminum as the cathode is comparable to or better than that obtained with high performance devices using calcium as the cathode.

A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.

A PMOS transistor is disclosed which includes a nitrogen containing barrier to oxygen diffusion between a gate dielectric layer and a metal gate in the PMOS transistor, in combination with a low oxygen region of the metal gate in direct contact with the nitrogen containing barrier and an oxygen rich region of the metal gate above the low oxygen content metal region. The nitrogen containing barrier may be formed by depositing nitrogen containing barrier material on the gate dielectric layer or by nitridating a top region of the gate dielectric layer. The oxygen rich region of the metal gate may be formed by depositing oxidized metal on the low oxygen region of the metal gate or by oxidizing a top region of the low oxygen region of the metal gate.

The invention discloses a graphene / inorganic semiconductor composite film and a preparation method thereof. The preparation method includes using graphene oxide or reducing graphene and inorganic semiconductor precursor as major raw materials, using a sol-gel method method or hydrothermal / solvent thermosynthesis method, using a function group on the surface of graphene as a nucleating point, and using the nucleating point to control size, shape and crystallization performance of an inorganic semiconductor to prepare an even composite film. Hydrogen bond, ion bond or covalent bond is formed by the prepared composite film using the function group on the surface of graphene with the inorganic semiconductor, dispersibility between graphene sheets is increased by the inorganic semiconductor, surface defects of graphene are compensated, conductivity and uniformity of graphene are increased, interface geometric contact and energy level matching of graphene and semiconductor nano-particles are improved, application range of a device is enlarged, and the graphene / inorganic semiconductor composite film is suitable for photoelectric fields of solar cells, sensors, OLEDs (organic light emitting diodes), touch screens and the like.

A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The transistor gate is engineered in lieu of the channel. The vertical pass transistor for the DRAM cell incorporates two gate materials having different work functions. The gate material near the storage node is n-type doped polysilicon. The gate material near the bit line diffusion is made of silicide or metal having a higher work function than the n-polysilicon. The novel device structure shows several advantages: the channel doping is reduced while maintaining a high Vt and a low sub-threshold leakage current; the carrier mobility improves with the reduced channel doping; the body effect of the device is reduced which improves the write back current; and the sub-threshold swing is reduced because of the low channel doping.

The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

Disclosed is a method of fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source / drain electrodes, and an organic semiconductor layer, in which the surface of the metal oxide source / drain electrodes or of the metal oxide source / drain electrodes and gate insulating layer is treated with a self assembled monolayer-forming compound containing a dichlorophosphoryl group. According to the method of example embodiments, the work function of the metal oxide of the source / drain electrodes may be increased to be higher than that with no SAM-forming electrode, thus making it possible to fabricate an improved organic thin film transistor having increased charge mobility.

An organic light-emitting display apparatus includes a substrate, a thin film transistor (TFT) disposed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode The organic light-emitting display apparatus further includes a pixel electrode including a first pixel electrode layer, a second pixel electrode layer disposed on the first pixel electrode layer and a third pixel electrode layer disposed on the second pixel electrode layer. The second pixel electrode layer is a metal layer and the third pixel electrode layer is a reflective layer. The organic light-emitting display apparatus further includes an emission layer (EML) disposed on the pixel electrode, and an opposite layer disposed on the EML.

A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region, a first gate electrode formed to surround a periphery of the LDD region and having a first work function, and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region and having a second work function that is higher than the first to work function.

The invention discloses a flexible graphene composite film and a preparation method thereof. The preparation method comprises the following steps of: based on oxidized or reduced graphene and organic polymer or micromolecule with a special functional group as raw materials, forming a uniform composite material by utilizing the interaction of a surface functional group of graphene and an organic molecule group, and preparing the graphene composite film on the surfaces of different substrates through methods of spin coating, spraying and the like. According to the preparation method disclosed by the invention, by utilizing an electron withdrawing group, an electron-donating group or a conjugate group in the organic polymer or micromolecule, the hole or electron concentration on the surface of a graphene electrode is increased, the work function of the electrode is controlled, the conductivity of the graphene electrode is improved, and the application range of a device is widened. According to the flexible graphene composite film disclosed by the invention, because the interaction among the groups is utilized, the compatibility of the prepared composite film is better, the structure is uniform, and the flexible graphene composite film is suitable for the photoelectric field of solar batteries, sensors, organic light-emitting diodes, touch screens and the like.

The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.

An electronic device employing a polymeric anode with high work function.

The transparent conductive film 1 includes laminated transparent conductive thin films 10 and 20 of at least two layers. The transparent conductive thin film of the uppermost layer is an amorphous oxide thin film composed of gallium, indium, and oxygen, a gallium content ranges from 49.1 atom % to 65 atom % with respect to all metallic atoms, a work function is 5.1 eV or more, and a surface resistance is 100 Ω / □ or less. The transparent conductive base material includes a transparent substrate and the transparent conductive film 1 formed one or both surfaces of the transparent substrate.

A variable resistive element that performs a forming action at small current and a stable switching operation at low voltage and small current, and a low-power consumption large-capacity non-volatile semiconductor memory device including the element are realized. The element includes a variable resistor between first and second electrodes. The variable resistor includes at least two layers, which are a resistance change layer and high-oxygen layer, made of metal oxide or metal oxynitride. The high-oxygen layer is inserted between the first electrode having a work function smaller than the second electrode and the resistance change layer. The oxygen concentration of the metal oxide of the high-oxygen layer is adjusted such that the ratio of the oxygen composition ratio to the metal element to stoichiometric composition becomes larger than the ratio of the oxygen composition ratio to the metal element of the metal oxide forming the resistance change layer to stoichiometric composition.

Methods for forming dual-metal gate CMOS transistors are described. An NMOS and a PMOS active area of a semiconductor substrate are separated by isolation regions. A metal layer is deposited over a gate dielectric layer in each active area. Silicon ions are implanted into the metal layer in one active area to form an implanted metal layer which is silicided to form a metal silicide layer. Thereafter, the metal layer and the metal silicide layer are patterned to form a metal gate in one active area and a metal silicide gate in the other active area wherein the active area having the gate with the higher work function is the PMOS active area. Alternatively, both gates may be metal silicide gates wherein the silicon concentrations of the two gates differ. Alternatively, a dummy gate may be formed in each of the active areas and covered with a dielectric layer. The dielectric layer is planarized thereby exposing the dummy gates. The dummy gates are removed leaving gate openings to the semiconductor substrate. A metal layer is deposited over a gate dielectric layer within the gate openings to form metal gates. One or both of the gates are silicon implanted and silicided. The PMOS gate has the higher work function.

The object of the invention is to provide an organic electroluminescent element which reduces the luminescence starting voltage, increases the luminescence brightness, and has excellent stability with repeated use. The invention achieves these objects by providing an organic electroluminescent element comprising at least a positive electrode, luminescing layer, and negative electrode, wherein said negative electrode is a compound layer of magnesium and a metal having a higher work function than magnesium, and the exterior surface side of said compound layer has a higher percentage of metal having a high work function.

An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO3) as its main component and MoOy (2<y<3) at 4% or more.

The present invention provides an organic light emitting diode comprising a substrate; a transparent cathode; an anode; and an organic material layer interposed between the transparent cathode and the anode, wherein the organic material layer comprises a light emitting layer and an n-type doped electron transport layer, the n-type doped electron transport layer includes an electron transport material and an n-type dopant and is disposed between the transparent cathode and the light emitting layer, and a method for manufacturing the same.

A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

A graphene electrode having a surface modified to have a high work function, and an electronic device including the same.

The invention discloses a single-layer organic solar cell, which comprises a transparent insulating substrate, a transparent anode electrode layer, a metal nanoparticle layer, a photosensitive layer and a cathode electrode layer sequentially stacked on the transparent insulating substrate. The work function value of the metal nanoparticles in the particle layer is higher than that of the transparent anode electrode layer. The metal nanoparticle layer is set in the single-layer organic solar cell of the present invention, thereby further enhancing the built-in electric field of the single-layer organic solar cell device, thereby improving the exciton splitting efficiency of the pair, and finally improving the efficiency of the single-layer organic solar cell. Energy conversion efficiency; the preparation method of a single-layer organic solar cell device uses stable sputtering and vacuum evaporation to form each layer of the solar cell device in sequence, so that the connections between the layers are tight and firm, so that the solar cell device The performance is stable, the production efficiency is high, and it is suitable for industrial production.

To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.

An exemplary embodiment of the present invention provides an organic light-emitting device, comprising: a first electrode; a second electrode; and a light emitting layer that is disposed between the first electrode and the second electrode, wherein the organic light-emitting device further comprises a first organic material layer that is contacted with the first electrode and a second organic material layer that is contacted with the second electrode, the first and the second organic material layers comprise a compound represented by Formula 1, and a third organic material layer comprising an n-type dopant between the second organic material layer contacted with the second electrode and the light emitting layer is included, and a method for manufacturing the same.