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Graphene/inorganic semiconductor composite film and preparation method thereof

A technology of inorganic semiconductors and composite films, which is applied in the manufacture of cables/conductors, conductive layers on insulating carriers, electrical components, etc., can solve the problem of affecting the conductivity of graphene and the uniformity of films, and restricting the smooth transmission of graphene electrons and holes , It is difficult to meet the needs of flexible development of devices, etc., to achieve the effect of improving the transmission of holes or electrons, superior performance, and controllable structure

Active Publication Date: 2013-04-03
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, common optoelectronic devices such as solar cells, sensors, organic light-emitting diodes (OLEDs), etc. mostly use indium tin oxide (ITO) as electrode materials, but due to the limitation of indium reserves on the earth, the price and prospect of indium are not optimistic. And the ITO film itself is brittle and easily corroded by acid, so choosing graphene to replace ITO electrodes has incomparable advantages
[0003] However, since the work function of graphene itself is between 4.3 and 4.6, there is often a large energy level width between the hole and electron transport layer, which limits the smooth transmission of graphene electrons and holes, making graphene difficult. Used alone as an electrode
Moreover, there are many defects and functional groups on the surface of graphene, which greatly affects the conductivity and film uniformity of graphene. Even if high temperature treatment is used, it is difficult to completely remove the defects and groups on the surface, which increases the complexity of the preparation process. , which makes the preparation more difficult, and at the same time limits the use of some substrates, making it difficult to meet the needs of future flexible development of devices

Method used

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  • Graphene/inorganic semiconductor composite film and preparation method thereof
  • Graphene/inorganic semiconductor composite film and preparation method thereof
  • Graphene/inorganic semiconductor composite film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Preparation of graphene oxide / SiC precursor gel:

[0038] Dissolve 3g of phenolic resin in 8.5mL of ethanol, add 12.5mL of tetraethyl orthosilicate and a small amount of 0.1M oxalic acid aqueous solution, then add the resulting mixed solution (20mL) into 1mg / mL graphene oxide aqueous solution (5mL) , ultrasonication for 1 h, then fully stirred and pre-hydrolyzed at a temperature of 38 ° C to 45 ° C, then added 5 mL of hexamethylene tetramine aqueous solution, and after standing still, the graphene oxide / SiC precursor gel was obtained.

[0039] Preparation of graphene oxide / SiC film:

[0040] 1) Add the graphene oxide / SiC precursor gel dropwise onto the substrate rotating at 3000rpm, and after spin coating for 30s, wash it twice with a mixed solution of ethanol and water;

[0041] 2) Dry the substrate obtained above in a vacuum oven at 120°C for 24h. Put it into a corundum tube, heat it up to 800°C at a rate of 4°C / min in an Ar atmosphere, then heat it up to 1200°C at ...

Embodiment 2

[0044] Graphene oxide / Al 2 o 3 Preparation of precursor sol:

[0045] Its preparation process is as follows figure 2 As shown, first weigh a certain amount of aluminum nitrate and dissolve it in 10mL distilled water to prepare a 0.5mol / L aluminum nitrate solution, then weigh a certain amount of citric acid, dissolve the citric acid in the aluminum nitrate solution, and prepare nitric acid The molar ratio of aluminum to citric acid is 1:2 solution, adjust the pH value with nitric acid and ammonia water, make the initial pH value of the solution is about 1, then add 2mL ethylene glycol as a dispersant, mix the solution (12mL) with 1mg / mL graphene aqueous solution (3mL) was stirred evenly to make a mixed solution. Put the mixed solution into a constant temperature water bath at 80°C and heat it for 12 hours to obtain graphene oxide / Al with certain viscosity and fluidity. 2 o 3 Precursor sol.

[0046] Graphene oxide / Al 2 o 3 Film preparation:

[0047] 1) The configured g...

Embodiment 3

[0051] Graphene oxide / TiO 2 Preparation of precursor sol:

[0052] First, 17.02mL of Ti (OC 4 h 9 ) 4 Dissolve in 68.28mL of absolute ethanol, then add 4.80mL of diethanolamine, stir on a constant temperature magnetic stirrer at room temperature for 2h, then add H 2 O / C 2 h 5 OH (0.9mL / 9mL) mixed solution, finally add 1g of polyethylene glycol, stir for 10min, then add 1mg / mL graphene oxide aqueous solution (5mL), and stir thoroughly for 10h after ultrasonication for 30min to obtain a uniform graphene oxide / TiO 2 Precursor sol.

[0053] Graphene oxide / TiO 2 Film preparation:

[0054] 1) The substrate is ultrasonically cleaned 4-5 times in advance with deionized water, acetone and isopropanol to remove oil and impurities on the surface, and then treated with oxygen plasma to improve the adhesion of the substrate;

[0055] 2) Clean the substrate obtained above and immerse it in the prepared sol solution at a uniform speed. After standing for 10 seconds, pull the subst...

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Abstract

The invention discloses a graphene / inorganic semiconductor composite film and a preparation method thereof. The preparation method includes using graphene oxide or reducing graphene and inorganic semiconductor precursor as major raw materials, using a sol-gel method method or hydrothermal / solvent thermosynthesis method, using a function group on the surface of graphene as a nucleating point, and using the nucleating point to control size, shape and crystallization performance of an inorganic semiconductor to prepare an even composite film. Hydrogen bond, ion bond or covalent bond is formed by the prepared composite film using the function group on the surface of graphene with the inorganic semiconductor, dispersibility between graphene sheets is increased by the inorganic semiconductor, surface defects of graphene are compensated, conductivity and uniformity of graphene are increased, interface geometric contact and energy level matching of graphene and semiconductor nano-particles are improved, application range of a device is enlarged, and the graphene / inorganic semiconductor composite film is suitable for photoelectric fields of solar cells, sensors, OLEDs (organic light emitting diodes), touch screens and the like.

Description

technical field [0001] The invention relates to a composite thin film and a preparation method thereof, in particular to a graphene / inorganic semiconductor composite thin film and a preparation method thereof; it belongs to the field of preparation of composite thin films, in particular to the field of photoelectric devices using graphene as an electrode. Background technique [0002] Graphene is an allotrope of carbon with a single-atom-scale honeycomb-like two-dimensional structure, and each carbon atom is sp 2 Hybridization, and contribute the remaining one p orbital electrons to form a large π bond, π electrons can move freely, so graphene has excellent electrical conductivity, flexibility, transparency and corrosion resistance, and is used in composite materials, energy storage, optoelectronic devices, etc. has received extensive attention. In terms of optoelectronic devices, graphene is considered to be the best alternative material for traditional electrodes. At pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
Inventor 吴欣凯石鑫栋黄赛君刘俊王经何谷峰
Owner SHANGHAI JIAO TONG UNIV
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