LED epitaxial wafer and forming method thereof

Abstract

The invention proposes an LED epitaxial wafer and a forming method thereof. The forming method comprises a first step of providing a substrate and forming a buffer layer on the substrate; a second step of forming a semiconductor material layer of a first doping type on the buffer layer; a third step of forming a quantum well structure on the semiconductor material layer of the first doping type; a fourth step of forming an electron blocking layer on the quantum well structure; and a fifth step of forming a semiconductor material layer of a second doping type on the electron blocking layer. The fourth step comprises forming a first AlxGa1-xN layer on the quantum well structure, and forming a second AlxGa1-xN layer on the first AlxGa1-xN layer. In the formation of the first AlxGa1-xN layer, a component x of an Al is gradually changed from a first component value to a component value, and the second component value is larger than the first component value. In the formation of the second AlxGa1-xN layer, a component x of an Al is constant. The LED epitaxial wafer and the forming method thereof can improve the internal quantum efficiency of LED chips, promote the light-emitting efficiency of the epitaxial wafer, and are suitable for the needs of high-power epitaxial wafers.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial wafer and a forming method thereof. Background technique [0002] With the development of LEDs, GaN-based high-brightness blue light, green light, and ultraviolet LEDs have attracted more and more attention. Semiconductor diodes have been applied to various fields due to their small size, low power consumption, long service life, environmental protection and durability. , For example: blue-green LEDs are widely used in full-color display and lighting, and ultraviolet LEDs are also used in optical detection. The preparation of high-power LED epitaxial wafers has become an inevitable trend of development, but with the increase of luminous power, the problem of efficiency attenuation appears. The problem of attenuation of efficiency is mainly due to carrier overflow and low-efficiency electron injection. and hole transport. The existing method to reduce the...

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Problems solved by technology

However, this structure is difficult to achieve in epitaxy, and at the same time leads to poor crystal quality of P-type

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