A GaN-based laser with asymmetric Al component AlGaN limiting layers comprises a GaN native substrate, an n-type GaN homoepitaxial layer, the n-type AlGaN limiting layer, an n-type GaN waveguide layer, an InGaN / lGaN quantum well active region, a p-type AlGaN electron blocking layer, a p-type GaN waveguide layer, the p-type AlGaN limiting layer, a p-type doped / p-type heavily-doped contact layer, a p-type ohmic electrode and an n-type ohmic electrode. The n-type GaN homoepitaxial layer is manufactured on the GaN native substrate, the n-type AlGaN limiting layer is manufactured on the n-type GaN homoepitaxial layer, the n-type GaN waveguide layer is manufactured on the n-type AlGaN limiting layer, the InGaN / lGaN quantum well active region is manufactured on the n-type GaN waveguide layer, the p-type AlGaN electron blocking layer is manufactured on the InGaN / lGaN quantum well active region, the p-type GaN waveguide layer is manufactured on the p-type AlGaN electron blocking layer, the p-type AlGaN limiting layer is manufactured on the p-type GaN waveguide layer, a protruding ridge is formed in the middle of the p-type AlGaN limiting layer, the p-type doped / p-type heavily-doped contact layer is manufactured on the protruding ridge of the p-type AlGaN limiting layer, the p-type ohmic electrode is manufactured on the p-type doped / p-type heavily-doped contact layer, and the n-type ohmic electrode is manufactured on the lower surface of the GaN native substrate.