318results about How to "Increase the restrictive effect" patented technology

The invention provides a double-heterojunction gallium nitride based HEMT (High Electron Mobility Transistor) taking aluminum-gallium-nitrogen as a high-resistance layer, comprising a substrate, a nucleating layer, an unintentionally-doped high-resistance layer, an unintentionally-doped high migration rate layer, an aluminum nitride inserting layer, an unintentionally-doped barrier layer and an unintentionally-doped gallium nitride or aluminum-gallium-nitrogen cap layer, wherein the nucleating layer is manufactured above the substrate and is 0.01-0.50 microns in thickness; the unintentionally-doped high-resistance layer is manufactured above the nucleating layer; the unintentionally-doped high migration rate layer is manufactured above the unintentionally-doped barrier layer; the aluminum nitride inserting layer is manufactured above the unintentionally-doped high migration rate layer and is 0.7-5 nm in thickness; the unintentionally-doped barrier layer is manufactured above the aluminum nitride inserting layer; and the unintentionally-doped gallium nitride or aluminum-gallium-nitrogen cap layer is manufactured above the unintentionally-doped barrier layer and is 1-5 nm in thickness. According to the double-heterojunction gallium nitride, the channel electron migration rate and the limiting capability to two-dimensional electronic gas are obviously improved; power leakage of the buffering layer is inhibited; and meanwhile, crystal lattice stress of the barrier layer is reduced, the defect density is reduced, and the stability and the reliability of the work of a device are improved.