High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof

Abstract

The invention discloses a high-breakdown gallium nitride-based field effect transistor device and a manufacturing method thereof. The manufacturing method comprises the following steps of: growing a nucleating layer on a substrate; growing an aluminum-gallium-nitrogen high-resistance buffering layer with a low aluminum component on the nucleating layer; growing a high-mobility gallium nitride channel layer on the aluminum-gallium-nitrogen high-resistance buffering layer; growing a thin aluminum nitride isolating layer on the gallium nitride channel layer; growing an aluminum-gallium-nitrogen barrier layer on the aluminum nitride isolating layer; growing a thin nitride cap layer on the aluminum-gallium-nitrogen barrier layer; and forming a source electrode, a drain electrode and a grid electrode on the nitride cap layer. According to the method, the process complexity is lowered, the breakdown voltage of the gallium nitride-based field effect transistor device is increased effectively, and the mobility of electrons in a channel is increased simultaneously.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high-breakdown GaN-based field-effect transistor device and a manufacturing method thereof. Background technique [0002] Group III-V gallium nitride (GaN)-based materials have the advantages of large band gap, high electron saturation drift velocity, good chemical stability, radiation resistance, high temperature resistance, and easy formation of heterojunctions. The material of choice for high-power, radiation-hardened high electron mobility transistor (HEMT) structures. GaN HEMT microwave power devices are widely used in civil and military fields such as wireless communication, digital broadcasting, mobile communication base stations, satellite ground stations, aerospace, radar, electronic countermeasure equipment, military guidance, and space communications. [0003] The high leakage and low breakdown voltage of the device have always been a major proble...

AI Technical Summary

Problems solved by technology

However, the obtained high-resistance GaN material is of poor quality, which is prone to current collapse and deteriorates the microwave power performance of the device.

Moreover, the process complexity of these means is high, precise control is relatively difficult, and there are serious reliability and stability problems.

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