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Ultraviolet LED extension active area structure growing method

A growth method and epitaxial growth technology, which is applied in the field of growth of violet LED epitaxial active region structure, can solve the problems of low luminous efficiency and achieve the effects of improving light efficiency, reducing voltage, and improving confinement

Active Publication Date: 2015-01-14
西安利科光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In lighting, biomedicine, anti-counterfeiting identification, air, water purification, biochemical detection, high-density information storage, etc., it can replace traditional ultraviolet mercury lamps containing toxic and harmful substances. At present, the growth of purple LEDs is limited and doped by the growth materials themselves. Influenced by difficulty, the luminous efficiency is generally low

Method used

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  • Ultraviolet LED extension active area structure growing method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0030] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 100 torr.

[0031] 3. Raise the temperature to 1070°C to grow a high-temperature AlN layer with a thickness of 500nm, and the growth pressure is 100torr.

[0032] 4. A layer of 10-period AlN / AlGaN superlattice is grown at a temperature of 1060° C. and 150 torr, with a total thickness of 50 nm.

[0033] 5. Grow a layer of n-type AlGaN intrinsically doped with silane at a temperature of 1060°C with a thickness of 500nm and a pressure of 200torr.

[0034] 6. Grow a layer of Al in nitrogen atmosphere 200torr, 1060℃ x Ga 1-x N / Al y Ga 1-y N(y>x) quantum well barrier layer, each period of quantum well layer Al x Ga 1-x N and barrier layer Al y Ga 1-y The thicknesses of the N layers are 3nm and 8nm respectively. The A...

Embodiment 2

[0041] 1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0042] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 100 torr.

[0043] 3. Raise the temperature to 1070°C to grow a high-temperature AlN layer with a thickness of 500nm, and the growth pressure is 100torr.

[0044]4. A layer of 10-period AlN / AlGaN superlattice is grown at a temperature of 1060° C. and 150 torr, with a total thickness of 50 nm.

[0045] 5. Grow a layer of n-type AlGaN intrinsically doped with silane at a temperature of 1060°C with a thickness of 500nm and a pressure of 200torr.

[0046] 6. Grow a layer of Al in nitrogen atmosphere 200torr, 1060℃ x Ga 1-x N / Al y Ga 1-y N(y>x) quantum well barrier layer, each period of quantum well layer Al x Ga 1-x N and barrier layer Al y Ga 1-y The thicknesses of the N layers are 3nm and 8nm respectively. The Al...

Embodiment 3

[0053] 1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.

[0054] 2. A low-temperature AlN layer with a thickness of 10 nm is grown at a temperature of 600° C., and the growth pressure is 100 torr.

[0055] 3. Raise the temperature to 1070°C to grow a high-temperature AlN layer with a thickness of 500nm, and the growth pressure is 100torr.

[0056] 4. A layer of 10-period AlN / AlGaN superlattice is grown at a temperature of 1060° C. and 150 torr, with a total thickness of 50 nm.

[0057] 5. Grow a layer of n-type AlGaN intrinsically doped with silane at a temperature of 1060°C with a thickness of 500nm and a pressure of 200torr.

[0058] 6. Grow a layer of Al in nitrogen atmosphere 200torr, 1060℃ x Ga 1-x N / Al y Ga 1-y N(y>x) quantum well barrier layer, each period of quantum well layer Al x Ga 1-x N and barrier layer Al y Ga 1-y The thicknesses of the N layers are 3nm and 8nm respectively. The A...

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Abstract

The invention provides a novel growing method for an extension structure to grow in an ultraviolet LED active area. A plurality of quantum well base layers grow in a special mode, finally the radiation luminescence of ultraviolet light can be achieved better, and the lighting effect of an ultraviolet LED can be improved. According to the method, in the process of growing of a plurality of periods of AlxGal-xN / AlyGal-yN quantum well base layers, the aluminum components of the base layers of the AlyGal-yN change in a progressive increasing mode, the electron barrier crossing barrier energy is reduced at the beginning, the current is evenly extended behind an enhanced barrier, the voltage is reduced, the limitation function of electrons is improved, meanwhile, a hole can be extended towards a center active area in the injection process very well, and the luminous efficiency of the whole ultraviolet LED can be improved, wherein as for each base layer, the Al content keeps constant in the growing process of the base layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic device preparation, and in particular relates to a method for growing a violet LED epitaxial active region structure. Background technique [0002] With the development of LED applications, the market demand for ultraviolet LEDs is increasing. Ultraviolet LEDs with emission wavelengths covering 210-400nm have advantages that traditional ultraviolet light sources cannot match. In lighting, biomedicine, anti-counterfeiting identification, air, water purification, biochemical detection, high-density information storage, etc., it can replace traditional ultraviolet mercury lamps containing toxic and harmful substances. At present, the growth of purple LEDs is limited and doped by the growth materials themselves. Due to the influence of difficulty, the luminous efficiency is generally low. How to improve the luminous efficiency is the focus of today's UV LED epitaxy. We found tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/0075H01L33/145H01L2933/0008
Inventor 王晓波
Owner 西安利科光电科技有限公司
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