23914 results about "Static electricity" patented technology

The present invention relates to a movable micro-element with reduced imprinting or hysteresis effect arranged spaced apart from a surface comprising at least one electrode. At least one restoring element is connected to said movable micro-element. An address electrode is arranged on said surface and capable to electrostatically attract said movable micro-element. Said address electrode is addressed to a first potential. Said movable micro-element is first set to a second potential defining a non addressed state and at a time period Δt before a predetermined pulsed signal is emitted said movable micro-element is switched from said second potential to a third potential defining an addressed state. Said movable micro-element is kept in said addressed state for a time period of Δt+Δt′. The invention also relates to a Spatial Light Modulator (SLM), an apparatus for patterning a workpiece and a method of reducing an imprinting or hysteresis effect of a movable micro-element.

A cassette table on which a wafer cassette is supported allows static electricity to be discharged from the cassette and hence, form the wafers disposed in the cassette. The cassette table includes a top plate, a cassette supporter that is mounted on the top plate and supports the cassette. At least part of the cassette supporter is made of a material that allows static electricity to be discharged to ground therethrough.

A microblind system has an array of overhanging stressed microblinds, each having an anchor portion attached a substrate and a mobile portion. The microblinds are responsive to electrostatic forces to mutate between a deployed configuration wherein the mobile portion obscure the substrate and a curled configuration wherein the mobile portion exposes the substrate. A transparent conductive layer permits the application of an electric field to the microblinds.

The present invention provides implantable systems that communicate wirelessly with each other using a unique format that enables devices configurations and applications heretofore not possible. Embodiments of the present invention provide communication apparatuses and methods for exchanging information with implantable medical devices. In some embodiments, two implantable devices communicate with each other using quasi-electrostatic signal transmission in a long wavelength / low frequency electromagnetic band, with the patient's body acting as a conductive medium.

The breakdown voltage between the potential of a terminal and the ground potential (or power supply potential) is improved by increasing the gate width of an MOS transistor included in a switch. Accordingly, another switch and the like are protected even when surge is applied to the terminal. By increasing the gate width of the MOS transistor included in the switch, the size of the other switch does not have to be increased. Therefore, variation in the potential at a node occurring when the other switch attains a non-conductive state from a conductive state can be suppressed. Therefore, a semiconductor device having the electrostatic breakdown voltage improved without influence on processing carried out based on an input potential from an external source, a module including a plurality of such semiconductor devices, and an electronic device including such a module can be provided.

Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.