2594results about How to "Reduce crystallinity" patented technology

A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a low degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.

Blends of at least two polymers incorporating propylene-derived units and processes for producing such blends are provided. The first polymer of the blend is a low crystallinity polymer including propylene-derived units. The second polymer is a high crystallinity polymer including propylene-derived units. The polymer blends exhibit the beneficial performance characteristics of low crystallinity propylene polymers while minimizing certain processing and handling problems associated with low crystallinity propylene polymers. Low crystallinity propylene polymer pellets often exhibit a tendency to agglomerate because of the softness of such particles. Agglomeration of the pellets creates problems in handling and processing the particles. The polymer blends disclosed reduce the tendency of polymer pellets to agglomerate while maintaining the desirable physical properties, such as elastomeric properties, exhibited by low crystallinity propylene polymers. Various processes for producing the polymer blends are also provided.

The invention relates to a pretreatment method of wood fiber raw materials, which belongs to the technical field of biomass chemical engineering. The process comprises the following steps: carrying out the first-step treatment after the wood fiber raw materials are mixed with mixed liquid of an organic acid solution and catalysts to obtain a liquid-solid mixture; separating the obtained liquid-solid mixture to obtain pretreatment black liquid and cellulose solids; washing the obtained cellulose solids by the organic acid solution to obtain washing black liquid and cellulose solids; adopting diluted acid or alkali for carrying out the second-step treatment on the obtained cellulose solids; mixing the obtained pretreatment black liquid and the obtained black liquid to obtain mixed black liquid; circularly using the mixed black liquid in the first-step treatment process; and recovering organic acids, lignin products and syrup solutions from the black liquid in the cyclic use for at least three times. The invention has the advantages that the full-rate development of raw materials can be realized, in addition, the environment-friendly effect can be realized, and the invention conforms to the requirement of modern biorefinery development.

Blends of amorphous and semicrystalline polymers having shape memory properties were prepared by blending a crystalline polymer such as poly(vinylidene fluoride), polylactide, poly(hydroxxybutyrate), poly(ethylene glycol) polyethylene, polyethylene-co-vinyl acetate, poly(vinyl chloride), poly(vinylidene chloride) and copolymers of poly(vinylidene chloride) and poly(vinyle chloride) and an amorphous polymer such as poly(vinyl acetate), poly methyl acrylate, poly ethyl acrylate, atactic poly methyl methacrylate, isotactic poly methyl methacrylate, syndiotactic poly methyl methacrylate and other poly alkyl methacrylates. The method for preparing the polymeric materials and applications thereof, for example, as smart medical devices, are also disclosed.

The invention provides a polymer porous membrane, a preparation method of the polymer porous membrane, a polymer electrolyte, a polymer battery and a preparation method of the polymer battery. A carbon material is dispersed in the polymer porous membrane, so that the degree of crystallization of a polymer which constitutes the polymer porous membrane is lowered and the liquid absorption of the polymer porous membrane is increased; the liquid absorption rate, liquid holding capability and ionic conductivity of the polymer porous membrane are increased; interface impedance is reduced, battery magnification discharging performance and the circulating performance of the battery are enhanced; simultaneously, the battery prepared by the method has excellent high temperature circulation and storage performance and low expansion ratio at a high temperature and further meets the development requirement of the polymer battery. Simultaneously, the preparation method is simple and is easy to implement and the prepared battery has high performance.

A three-dimensional object is manufactured by selective sintering by means of electromagnetic radiation, wherein the powder comprises a polymer or copolymer having at least one of the following structural characteristics:

• • (i) at least one branching group in the backbone chain of the polymer or copolymer, provided that in case of the use of polyaryletherketones (PAEK) the branching group is an aromatic structural unit in the backbone chain of the polymer or copolymer;
  • (ii) modification of at least one end group of the backbone chain of the polymer or copolymer;
  • (iii) at least one bulky group within the backbone chain of the polymer of copolymer, provided that in case of the use of polyaryletherketones (PAEK) the bulky group is not selected from the group consisting of phenylene, biphenylene, naphthalene and CH₂— or isopropylidene-linked aromatics;
  • (iv) at least one aromatic group non-linearly linking the backbone chain.

A low temperature method and system configuration for depositing a doped silicon layer on a silicon substrate of a selected grade. The silicon substrate for functioning as a light absorber and the doped silicon layer for functioning as an emitter. The method comprises the acts of: positioning the silicon substrate in a chamber suitable for chemical vapour deposition of the doped silicon layer on the silicon substrate, an external surface of the silicon substrate suitable for promoting crystalline film growth; using a plurality of process parameters for adjusting growth of the doped silicon layer, the plurality of process parameters including a first process parameter of a process temperature for inhibiting diffusion of dopant atoms into the external surface of the silicon substrate, and a second process parameter of a hydrogen dilution level for providing excess hydrogen atoms to affect a layer crystallinity of the atomic structure of the doped silicon layer; exposing the external surface of the silicon substrate in the chamber to a vapour at appropriate ambient chemical vapour deposition conditions, the vapour including silicon atoms, dopant atoms and the excess hydrogen atoms, the atoms for use in growing the doped silicon layer; and originating growth of the doped silicon layer on the external surface to form an interface between the doped silicon layer and the silicon substrate, such that the doped silicon layer includes first atomic structural regions having a higher quality of the layer crystallinity next to the interface with adjacent second atomic structural regions having a lower quality of the layer crystallinity with increasing concentrations of crystal defects for increasing thickness of the doped silicon layer from the interface. The resultant silicon substrate and doped layer (or thin film) can be used in solar cell manufacturing.

The invention provides a preparation method for small-size ZSM-5 molecular sieve. Wherein, using pearlite and montmorillonite as material for aluminum, adding crystal seed for crystallization reaction on hydrothermal condition, and obtaining a small-size product with 5~95% ZSM-5 that can be used to prepare modified ZSM-5 molecular sieve by different post-treatment method or as the active intergradient or carrier for catalyst. This invention cuts the cost more.

The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a second nitride semiconductor substrate covering said supporting substrate, having grown from the top and side surfaces of said first nitride semiconductor layer, wherein a cavity is formed under the second nitride semiconductor layer.

A protective layer having a periodically arranged stripe-like, grid-like or island-like apertures is formed on the supporting substrate. The first nitride semiconductor layer is laterally grown from the exposed portion of the substrate. The growth is stopped before the first nitride semiconductor layer covers the supporting substrate. Thus, the first nitride semiconductor layer has a periodical T-shaped cross-section. Then, the protective layer is removed and the second nitride semiconductor layer is grown from the top and side surface of the first nitride semiconductor layer to cover the substrate.

The invention discloses a compound nano material of graphene and molybdenum disulfide (MoS2) and a preparation method thereof. The compound material is formed by mixing graphene and a MoS2 nano material in a mass ratio of (1 to 1)-(4 to 1). The preparation method comprises the following steps of: preparing an oxidized graphite nano slice from graphite by a chemical oxidization method; then dissolving molybdate into deionized water so as to form 0.02 to 0.07M of solution; adding L-cysteine serving as a sulfur source and a reduction agent, wherein the mass ratio of the L-cysteine to the molybdate is (5 to 1)-(12 to 1); adding the oxidized graphite nano slice into the solution, and ultrasonically treating so that the oxidized graphite nano slice can be fully dispersed in the hydrothermal reaction solution; transferring the mixture into a hydrothermal reaction kettle and sealing; and synthesizing by a one-step hydrothermal method to obtain the compound nano material of graphene and MoS2, wherein the mass ratio of the graphene nano slice to the MoS2 is (1 to 1)-(4 to 1). The method has the characteristics of mild reaction condition and simple process. The compound nano material of graphene and MoS2 synthesized by the method can be widely used as electrode materials of new energy batteries, high-performance national lubricants, catalyst carriers and the like.

The invention relates to a low warping high surface gloss glass fiber reinforced polyester composite material and preparation method thereof. The composite material comprises the following components (wt%): 10-35% of polycarbonate, 20-45% of polybutylece terephthalate, 1-10% of flexibilizer, 3-10% of kaolin and 15-38% of glass fiber; 0.1-1% of antioxidant, 0.1-0.5% of ester exchange inhibiting agent and 0.1-3% of processing agent are prepared, silane coupling agent is utilized to process kaolin, then raw materials are placed into a mixing machine to be mixed for 2-5min, then mixture is placed into a screw machine for extrusion granulation, and meanwhile side charging is carried out on the glass fiber, the rotating speed of screw machine is 180-600rpm, and temperature is 240-280 DEG C, thus obtaining the product. The invention can obtain products with high surface gloss, excellent comprehensive mechanical properties and dimensional stability and especially ensures low warping property of product when being produced into injection moulding product.

The invention relates to a nitrogen-phosphorus double-doped carbon-coated transition metal diphosphide hydrogen evolution catalyst and a preparation method thereof. The nitrogen-phosphorus double-doped carbon-coated transition metal diphosphide is characterized in that the structural formula is MP2@NPC, a transition metal diphosphide MP2 is used as a core, nitrogen-phosphorus double-doped carbon NPC is used as a shell so that a core-shell structure is formed, the diphosphide has a nano-particle structure, the particle size is less than 50nm and good crystallinity is obtained. The composite catalyst has the electrocatalytic hydrogen evolution activity similar to that of the commercial platinum carbon and catalyst stability better than that of the commercial catalyst. The catalyst has a wide application prospect.