1231 results about "Gallium oxide" patented technology

A method for extracting silicon dioxide, alumina and gallium oxide from high-alumina fly ash relates to the technology fields of environmental mineralogy and material, chemical industry and metallurgy. The method comprises the main steps as follows: causing the high-alumina fly ash to react with sodium hydroxide solution; filtering the solution; introducing CO2 to the filtrate for full gelation; cleaning, purifying, drying, grinding and calcining the silica gel after gel filtration to obtain finished white carbon black; adding limestone and a sodium carbonate solution into the filter mass after the reaction and filtration of the high-alumina fly ash and the sodium hydroxide solution; ball grinding the mixture into raw slurry; dissolving out the clinker obtained by baking the raw slurry; subjecting the filtrate to deep desiliconization to obtain sodium aluminate extraction liquid; filtrating the sodium aluminate extraction liquid after subjecting the sodium aluminate extraction liquid to carbon dioxide decomposition; baking the aluminum hydroxide after washing the filter mass to form the aluminum hydroxide product; and extracting the gallium oxide from the carbon dioxide decomposition mother solution and desiliconized solution. The method has the advantages of low material price, simple operating procedures, low investment, low production cost, low energy consumption and less slag.

A process for the reduction of oxides in a gas stream (e.g., automotive exhaust) uses a catalyst comprising a molecular sieve having the CHA crystal structure and having a mole ratio of greater than 50 to 1500 of (1) an oxide selected from silicon oxide, germanium oxide or mixtures thereof to (2) an oxide selected from aluminum oxide, iron oxide, titanium oxide, gallium oxide or mixtures thereof.

A mechanoluminescence material comprising a mother body material and a luminescence center added to the mother body material. The mother body material is constituted of at least one kind of oxide selected from alumino silicate, aluminate, silicate, tantalate, niobate, gallium oxide, and ZrO2, and the luminescence center is at least one kind selected from a rare earth metal and a transition metal which emits light when electrons excited by mechanical energy are restored to a normal state.

Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In / (In+Ga+Zn)<0.75

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

A method of making a semiconductor element which has a substrate formed of gallium oxide and a semiconductor layer formed on the substrate. The method has: a first dividing step that the substrate with the semiconductor layer formed thereon is divided into a strip bar along a first cleaved surface of the substrate; and a second dividing step that the strip bar is divided in a direction perpendicular to the first cleaved surface.

The invention belongs to the field of electroluminescent devices and particularly relates to a novel quantum dot luminescent device. The novel quantum dot luminescent device comprises an ITO anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer, an Al cathode and an insulating layer, wherein the insulating layer is arranged between the hole transmission layer and the quantum dot luminescent layer. The material of the insulating layer can be one or more of polymethyl methacrylate, calcium oxide, aluminum oxide, silicon oxide or gallium oxide and the like. Through the arrangement of the insulating layer, on one hand, injection of holes and electrons is effectively balanced; and on the other hand, the electric neutrality of quantum dots is ensured, so that the luminescence property of a blue-green quantum dot light-emitting diode is improved.

A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

A catalyst system for the reduction of NOx comprises a catalyst comprising a metal oxide catalyst support, a catalytic metal oxide comprising at least one of gallium oxide or silver oxide, and at least one promoting metal selected from the group consisting of silver, cobalt, molybdenum, tungsten, indium, bismuth and mixtures thereof. The catalyst system further comprises a gas stream comprising an organic reductant, and a compound comprising sulfur. A method for reducing NOx utilizing the said catalyst system is also provided.

A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

The invention relates to a copper-based catalyst with high activity and a long catalyst life and to a method of producing the catalyst. This catalyst essentially comprises copper oxide, zinc oxide, aluminum oxide, and silicon oxide and optionally containing zirconium oxide, gallium oxide, and palladium oxide, wherein with the total weight of the catalyst being taken as 100%, the above oxides account for, in the order mentioned, 20-60 weight %, 10-50 weight %, 2-10 weight %, 0.3-0.9 weight %, 0-40 weight %, 0-10 weight %, and 0-10 weight %, respectively, and the silicon oxide mentioned above has been derived from colloidal silica or dissolved silica in water, which catalyst has been subjected to calcination at 480-690 DEG C.

The invention discloses a flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and a preparation method thereof. The preparation method specifically comprises the following steps: preparing a gallium oxide micron band material by utilizing a vapor deposition method, by taking the band material as a light-sensitive material of solar-blind ultraviolet light, transferring the gallium oxide micron band material onto a flexible substrate, and preparing metal electrodes at two ends of the gallium oxide micron band by combining masking and vacuum coating methods so as to finally obtain the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector. According to the preparation method disclosed by the invention, the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector is prepared first by combining the flexible gallium oxide micron band material with the flexible substrate, and the device has the bending characteristic aiming at characteristic response and flexibility of the solar-blind ultraviolet light. The flexible detector has repeated bending restorability and can be applied to the fields of wearable detection equipment, curved screen interaction equipment, bionic tissues and the like. Moreover, the convenience and freedom degree of arrangement and design of the solar-blind photoelectric detection system can be greatly improved.

The invention discloses a high-breakdown-voltage gallium-oxide Schottky diode structure comprising a highly-doped n type Ga2O3 substrate (1), a lowly-doped n type Ga2O3 epitaxial layer (2), and an anode electrode (4). A cathode electrode (5) is deposited at the lower surface of the substrate; the anode electrode and the epitaxial layer (2) are in Schottky contact; and the cathode electrode and the substrate (1) are in ohmic contact. An organic ferroelectric dielectric layer (3) with a thickness of 300 to 500 nm is deposited on the upper surface of the epitaxial layer (2). A circular hole is etched in the organic ferroelectric dielectric layer; the anode electrode is deposited in the hole of the organic ferroelectric dielectric layer; a field plate (6) is deposited at the edge of the hole; and the field is arranged on the organic ferroelectric dielectric layer and is connected with the anode electrode. Therefore, the reverse breakdown voltage can be improved and the forward characteristic is not changed. The high-breakdown-voltage gallium-oxide Schottky diode can be applied to a high-speed integration circuit and a microwave circuit.

A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

The invention relates to a growth method and a growth device of a large-size gallium oxide single crystal. The method comprises the steps of mounting a plurality of thermal field parts, which are used for heating and preserving heat to form a thermal field, in a single crystal furnace horizontally and concentrically; placing an iraurita crucible with a cover into the center of the thermal field, wherein an iraurita mould is embedded into the iraurita crucible; fixing a specifically-oriented beta-Ga2O3 seed crystal in a seed crystal clamp; placing a gallium oxide raw material into the iraurita crucible and covering the cover of the iraurita crucible; after vacuumizing, introducing mixed gas of Ar and CO2 according to the ratio of 9:1 to 8:2 until the pressure intensity of a furnace chamber is 1.05 to 1.5 MPa; performing induction heating so as to completely melt the gallium oxide raw material; inoculating after roasting the seed crystal for 5 to 10 minutes; after the seed crystal is in melting connection with the melt completely, seeding and necking until the sectional size of the seed crystal is reduced to be 1 to 2 mm; performing shouldering growth stage; performing constant-diameter growth stage; when the growth of the crystal is finished and the crystal is completely separated from the top end of the mould, stopping lifting and slowly cooling to room temperature to obtain the transparent, integrated, high-quality and sheet-like gallium oxide single crystal without crystal boundary.

An anti-fogging insulating windshield with high infrared reflectivity (more than 70%) features that a semiconductor oxide film, which may be the indium oxide film doped by tin oxide or the zinc oxide film doped by at least one of aluminium oxide, silicon oxide, boron oxide, dysprosium oxide and gallium oxide, is arranged between PVB film and the internal or external surface of glass. Its preparing processis also disclosed.

In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.

Methods for improving surface roughness of an environmental barrier coating including providing a component having a plasma sprayed environmental barrier coating; applying a slurry to the environmental barrier coating of the component, the slurry being a transition layer slurry or an outer layer slurry; drying the environmental barrier coating having the applied slurry; and sintering the component to produce a component having an improved surface roughness where the slurry includes a solvent; a primary transition material, or a primary outer material; and a slurry sintering aid selected from iron oxide, gallium oxide, aluminum oxide, nickel oxide, titanium oxide, boron oxide, alkaline earth oxides, carbonyl iron, iron metal, aluminum metal, boron, nickel metal, iron hydroxide, gallium hydroxide, aluminum hydroxide, nickel hydroxide, titanium hydroxide, alkaline earth hydroxides, iron carbonate, gallium carbonate, aluminum carbonate, nickel carbonate, boron carbonate, alkaline earth carbonates, iron oxalate, gallium oxalate, aluminum oxalate, nickel oxalate, titanium oxalate, solvent soluble iron salts, solvent soluble gallium salts, solvent soluble aluminum salts, solvent soluble nickel salts, solvent titanium salts, solvent soluble boron salts, and solvent soluble alkaline earth salts.

A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

The invention discloses a method for growing tabular gallium oxide crystals through an edge-defined film-fed growth process. The method comprises the following steps of: by taking high-purity gallium oxide powder as a raw material, selecting an iridium die with the top end having such a surface smoothness so that mirror face effect is achieved; by selecting beta-Ga2O3 single crystals with an end-face normal direction (010) as seed crystals and taking a (100) surface as a main growth surface, melting the material in a high-purity CO2 atmosphere for growing, increasing the temperature to the range from 10 to 20 DEG C after melting of the material is finished, keeping the temperature constant for 1-2 hours and then entering a growth stage; dividing the whole crystal growth into four parts: seeding, necking down, shouldering and isodiametric growth; employing different technical parameters at different growth stages until the whole growth process is completed, thereby obtaining tabular beta-Ga2O3 crystals. The tabular beta-Ga2O3 crystals prepared by the method provided by the invention has the characteristics of regular appearance, flat surface, no bubbles, no polycrystal and no stress fringes.

An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole.

A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Disclosed is a method for preparing a self-supporting GaN substrate material. A gallium oxide nanorod ordered array is grown on a substrate, such as a sapphire or a silicon wafer, through a hydrothermal method; the gallium oxide nanorod is subjected to partial or whole nitridation in ammonia gas atmosphere to form gallium nitride-coated gallium oxide, namely GaN@Ga<2>O<3> or a GaN nanorod orderedarray; GaN hydride vapor phase epitaxy (HVPE) transverse epitaxy and thick film growth are performed on the substrate comprising the GaN nanorod ordered array to obtain a low-stress and high-quality GaN thick film material; the gallium oxide on the interface layer is removed through chemical corrosion to obtain the self-supporting GaN substrate material; or based on thermal stress between galliumoxide / gallium nitride and the heterojunction substrate, such as the sapphire, the in-situ automatic separation between the nanorod and the sapphire substrate can be realized by adopting a method of controlling cooling rate so as to obtain the GaN substrate material.

The invention provides a method for manufacturing a gallium nitride-based semiconductor device having low-density crystalline defects and high-quality crystalinity. In the manufacturing method according to the invention, first, a gallium oxide substrate is prepared. Then, a surface of the gallium oxide substrate is modified into a nitride via physical or chemical pretreatment to form a surface nitride layer having Ga—N bonding. Finally, gallium nitride-based semiconductor layer is formed on the surface nitride layer.

The invention discloses a solar blind ultraviolet photoelectric detector based on an amorphous gallium oxide film and a preparation method thereof, and belongs to the technical field of photoelectricdetectors. The method comprises the steps that the crystal face (0001) Al2O3 is adopted as a substrate, and the substrate is cleaned; then, the cleaned substrate is fed into a settling chamber, a radio frequency magnetic control sputtering technology is applied to the substrate to grow a gallium oxide film; finally, a hollow interdigital mask plate is used for shielding on the amorphous gallium oxide film, a direct current magnetic control sputtering method is adopted for sputtering an interdigital metal electrode on the interdigital mask plate to obtain the solar blind ultraviolet photoelectric detector, the structure is an MSM type sandwiched structure, and the Al2O3 substrate, the amorphous gallium oxide film material and the Ti / Au interdigital metal electrode are arranged from bottom to top. The manufacturing technology is simple, the repeatability is good, dark current is small, the stability is high, the response speed is high, the ultraviolet visible restrain ratio is high, andthe detector conforms to the energy-saving and emission-reducing theory, is suitable for large-scale production, and has the wide development prospect.

The invention discloses a gallium oxide film based on a sapphire substrate and a growing method of the gallium oxide film to mainly solve the problems that an existing gallium oxide film is poor in surface appearance and small in grain size. The gallium oxide film comprises the sapphire substrate (1) and a gallium oxide epitaxial layer (3). The gallium oxide film is characterized in that a 7-12 nm gallium oxide buffering layer (2) is arranged between the sapphire substrate (1) and the gallium oxide epitaxial layer (3), and the crystal quality of the gallium oxide buffering layer is improved through thermal annealing. The roughness of the surface of a Ga2O3 film is reduced, the surface appearance of the Ga2O3 film is improved, the grain size of Ga2O3 is increased, and the gallium oxide film can be used for manufacturing a semiconductor power device.

The invention provides a multifunctional air cleaning agent which comprises the following components in parts by weight: 35-80 parts of kieselguhr, 0.5-10 parts of nano titanium dioxide, 0.5-5 parts of dispersing agent, 0.1-1 part of rare earth activating agent, 50-100 parts of inorganic mineral powder and 30-60 parts of water, wherein the dispersing agent is sodium hexametaphosphate, sodium polyphosphate or ptassium triphosphate; the rare earth activating agent is gallium oxide, cerium oxide or neodymium oxide; and the inorganic mineral powder is gypsum powder or sepiolite clay powder. The multifunctional air cleaning agent is capable of efficiently absorbing and degrading harmful gases for a long time, and has the effects of deodorization, sterilization and anion release.

The invention discloses an ultraviolet detector. A gallium oxide / zinc oxide based core shell nano-rod structure layer is arranged between a quartz substrate and a transparent contact electrode of the detector, wherein the contact electrode is an ITO conductive thin film which is deposited on a glass substrate and is provided with a 0.2cm channel; the gallium oxide / zinc oxide based core shell nano-rod structure layer is composed of a ZnO nano-array seed layer and a beta-Ga2O3 layer which grows on the surface of the ZnO nano-array seed layer, the beta-Ga2O3 layer is composed of a nano beta-Ga2O3 crystal with a spherical shape, and the average size of the nano beta-Ga2O3 crystal is 30nm. The core shell nano-rod structure layer can be used for preparing a beta-Ga2O3 / ZnO core shell nano-rod structure through the steps of taking the ZnO nano-array as a carrier, adopting gallium nitrate and hexamethylenetetramine as materials, firstly growing a GaOOH precursor on the surface of ZnO by using a low-temperature water solution, and then implementing high-temperature heating. The preparation method disclosed by the invention is simple in process and low in reaction temperature; and in addition, prepared products have very good photoresponse to the ultraviolet light.

The invention provides a preparation method of a gallium oxide film with a hole conduction characteristic as well as the gallium oxide film with the hole conduction characteristic. The preparation method of the gallium oxide film with the hole conduction characteristic comprises the following steps: placing a substrate in a growing tray in a sealed reaction chamber, heating the tray to a temperature which is 10-200 DEG C higher than the expected growing temperature of the gallium oxide film, and thermally treating the substrate; after reducing the temperature of the tray to the predetermined growing temperature, continuously exhausting air to the reaction chamber in a predetermined pressure range; introducing a gallium source, an oxygen source and a doping source to the reaction chamber so as to realize the epitaxial growth of the gallium oxide film; when the growing process of the gallium oxide film is finished, carrying out in-situ thermal treatment to the gallium oxide film or directly cooling and sampling the gallium oxide film slowly or carrying out thermal treatment after sampling to obtain the gallium oxide film with the hole conduction characteristic. The method provided by the invention is scientific and reasonable in step, overcomes many problems in the prior art, provides an effective acceptor doping path, and can be used for preparing gallium oxide films with different hole concentrations.