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Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof

An electrical detector, gallium oxide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of inflexibility of gallium oxide-based solar-blind ultraviolet photodetectors, improve portability, reduce overall production costs, Prepare simple effects

Inactive Publication Date: 2017-05-24
FUJIAN AGRI & FORESTRY UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing gallium oxide-based solar-blind ultraviolet photodetectors do not have flexibility, and to provide a flexible gallium oxide-based solar-blind ultraviolet photodetector with recoverability in repeated bending tests and its preparation method

Method used

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  • Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof
  • Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof
  • Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof

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Embodiment 1

[0037] See attached figure 2 The chemical vapor deposition method uses a high temperature tube furnace as the growth equipment, mixes the reaction gas oxygen and the carrier gas argon to form the growth gas 1, and puts 1g of metal gallium in the quartz boat 2 as the gallium source 3, and puts it on the quartz substrate 4 on gallium oxide microribbons 5 (see figure 2 Process a) in the process; the gallium oxide microribbons 5 grown on the quartz substrate are transferred to the flexible substrate 6 of polyethylene terephthalate (PET) (see figure 2 Process b) in the process; using a magnetron sputtering coating device combined with a metal mask, a metal electrode 7 using Au material is prepared at both ends of the gallium oxide microribbon 5, and the thickness of the metal electrode 7 using Au material is 200nm (see figure 2 in procedure c); connect the power supply for performance testing (see figure 2 in process d). Finally, a flexible gallium oxide-based sun-blind ult...

Embodiment 2

[0042] See attached figure 2, the physical vapor deposition method uses a high-temperature tube furnace as a growth device, a single carrier gas argon as a growth gas 1, and a mixture of 1 g of gallium oxide and carbon powder in a quartz boat 2 as a gallium source 3. Gallium oxide microribbons 5 are grown on the substrate 4 (see figure 2 Process a) in the process; the gallium oxide microribbon 5 grown on the quartz substrate is transferred to the flexible substrate 6 of polyvinyl chloride (PVC) material (see figure 2 Process b) in the process; using electron beam evaporation coating equipment combined with a metal mask to prepare a metal electrode 7 using a Ti / Au composite layer at both ends of the gallium oxide microribbon 5, the thickness of the metal electrode 7 using a Ti / Au composite layer is 300nm (see figure 2 in procedure c); connect the power supply for performance testing (see figure 2 in process d). Finally, a flexible gallium oxide-based sun-blind ultravio...

Embodiment 3

[0044] See attached figure 2 , the physical vapor deposition method uses a high-temperature tube furnace as a growth device, a single carrier gas argon as a growth gas 1, and 1 g of gallium oxide and carbon powder in a quartz boat 2 as a gallium source 3, on a quartz substrate 4 GaO microribbons were grown on 5 (see figure 2 Process a) in the process; the gallium oxide microribbon 5 grown on the quartz substrate is transferred to the flexible substrate 6 of polyethylene (PE) material (see figure 2 Process b) in the process; using thermal evaporation coating equipment combined with photolithography mask technology, metal electrodes 7 using Ni / Au composite layers are prepared at both ends of gallium oxide micro-ribbon 5, and the thickness of metal electrodes 7 using Ni / Au composite layers is 500nm (see figure 2 in procedure c); connect the power supply for performance testing (see figure 2 in process d). Finally, a flexible gallium oxide-based sun-blind ultraviolet phot...

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Abstract

The invention discloses a flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and a preparation method thereof. The preparation method specifically comprises the following steps: preparing a gallium oxide micron band material by utilizing a vapor deposition method, by taking the band material as a light-sensitive material of solar-blind ultraviolet light, transferring the gallium oxide micron band material onto a flexible substrate, and preparing metal electrodes at two ends of the gallium oxide micron band by combining masking and vacuum coating methods so as to finally obtain the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector. According to the preparation method disclosed by the invention, the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector is prepared first by combining the flexible gallium oxide micron band material with the flexible substrate, and the device has the bending characteristic aiming at characteristic response and flexibility of the solar-blind ultraviolet light. The flexible detector has repeated bending restorability and can be applied to the fields of wearable detection equipment, curved screen interaction equipment, bionic tissues and the like. Moreover, the convenience and freedom degree of arrangement and design of the solar-blind photoelectric detection system can be greatly improved.

Description

technical field [0001] The invention relates to a solar-blind ultraviolet photodetector and a preparation method thereof, in particular to a flexible gallium oxide-based solar-blind ultraviolet photodetector and a preparation method thereof. Background technique [0002] The atmosphere has a strong absorption of sunlight in the 200-280 nm ultraviolet band, and the light in the 200-280 nm band is called solar-blind ultraviolet light. The absorption of solar-blind ultraviolet light by the atmosphere provides a natural low-background window for the detection of artificial solar-blind ultraviolet signals. A solar-blind ultraviolet photodetector refers to an ultraviolet detector that has a characteristic response to 200-280nm solar-blind light, but does not respond to 280-800nm ​​ultraviolet and visible light (Rikiya Suzuki, Shinji Nakagomi, and Yoshihiro Kokubuna, Appllied Physics Letters, 2011, 98:131114). At present, solar-blind ultraviolet detectors have been widely used in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/18
CPCH01L31/09H01L31/18Y02P70/50
Inventor 郑清洪陈礼辉欧阳新华黄六莲杨海洋
Owner FUJIAN AGRI & FORESTRY UNIV
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