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753 results about "Quartz substrate" patented technology

Shin-Etsu quartz substrates are most commonly used as photomask substrates for optical lithography and other applications that require ultra-high purity and high precision polished substrates. As far as polished substrates are concerned, quartz substrates have an advantage over regular glass substrates because they offer much better light...

At-cut crystal resonator

PCT No. PCT / JP98 / 01526 Sec. 371 Date Dec. 14, 1998 Sec. 102(e) Date Dec. 14, 1998 PCT Filed Apr. 2, 1998 PCT Pub. No. WO98 / 47226 PCT Pub. Date Oct. 22, 1998In an AT-cut quartz resonator having excitation electrodes formed on two principal surfaces of an AT-cut quartz substrate, the two electrodes are displaced a predetermined amount apart in a direction orthogonal to the X-axis direction so that a frequency deviation in a temperature range of from -10 DEG C. to 50 DEG C. is less than + / -2.5 ppm. Further, in an AT-cut quartz resonator in which vertically opposed electrodes on both principal surfaces of a quartz substrate are slightly displaced apart in opposite directions along the Z' axis of quartz crystal, a balancing load is formed on a piezoelectric substrate on the side opposite to the direction of displacement of the electrodes. Thus, the present invention dispenses with the need for raising the ratio of conforming to nonconforming quartz substrates by eliminating variations in their cutting angle, but makes it possible to use nonconforming quartz substrates to offer customers low-cost quartz resonators of oscillation frequencies following various specs, by making easy, simple structural modifications of slightly changing the electrode arrangement or structure, or by making simple improvements to the conventional quartz resonator manufacturing process. In the manufacture of oscillators for use in consumer-electronics equipment, it is possible to fulfill any particular specs without inserting a temperature compensating circuit in the oscillation circuit. In regards to industrial equipment, any adjustments need not be made to the temperature compensating circuit in the oscillation circuit, and this improves the productivity of various communications equipment and various electronics equipment and reduces their manufacturing costs.
Owner:TOYO TSUSHINKI

Cell electrofusion chip device based on columnar microelectrode array and electrofusion method

InactiveCN101693875AHigh fusion throughputSolving this conundrum of mobilityHybrid cell preparationStress based microorganism growth stimulationElectricitySignal on
The invention provides a cell electrofusion chip device based on a columnar microelectrode array, which consists of a columnar microelectrode array chip, a printed circuit board and a flow passage control module. The columnar microelectrode array chip consists of a quartz substrate layer, a metal lead layer, a polymer insulated layer and a columnar microelectrode layer sequentially from bottom to top, wherein the metal lead layers of the columnar microelectrode array chip is electrically connected with the periphery printed circuit board in a bonding way, leads outside electrical signals onto a columnar microelectrode, and leads a gradient electric field with enough strength to be formed between adjacent columnar microelectrodes; and the flow passage control module covers the columnar microelectrode array chip. In the invention, by loading electrical signals on the columnar microelectrode, queue and fusion among cells are controlled; simultaneously, the superiority that the columnar microelectrode array benefits the flow of the cells in chamber-tracts is utilized for realizing continuous stream fusion of the cells; and with the combination of the design of the array columnar microelectrode, the continuous, high-efficient and high-throughput fusion of the cells in the device is realized.
Owner:CHONGQING UNIV

Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask

An embedded attenuated phase shift mask ("EAPSM") includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact in the mask structure.
Owner:UNAXIS USA

Microlens array substrate and production method therefor

InactiveUS20060215269A1Pattern size is accurateReduce materialNon-linear opticsLensResistImage resolution
A micro-lens substrate having a precise micro-lens array suitable for higher resolution, the micro-lens array substrate of high quality without having a distortion, and a method for manufacturing thereof are provided. In the micro-lens array substrate of the present invention, a micro-lens array formed of a plurality of consecutive concave lens-shaped micro-lenses is directly formed in a surface of a quartz substrate or glass substrate, and the micro-lens array is formed by a transfer method based on dry-etching. In the micro-lens array substrate of the present invention, a taper portion is formed toward the surface of the substrate in a peripheral portion of the micro-lens array in the quartz substrate or glass substrate. In a method for manufacturing the micro-lens array substrate of the present invention, a resist layer having a plurality of consecutive lens-shaped concave portions is formed in a surface of a quartz or glass substrate, the lens-shaped concave portion of the resist layer is transferred to the substrate by dry-etching, and a micro-lens array is formed by injecting a resin into the lens-shaped concave portion of this substrate. In addition, a taper portion is formed in a peripheral portion similarly to the formation of the lens-shaped concave portion, and a micro-lens array is formed by injecting a resin into the lens-shaped concave portion and taper portion.
Owner:SONY CORP

All-angle bendable LED (Light Emitting Diode) filament strip and antique LED bulb comprising same

The invention provides an all-angle bendable LED (Light Emitting Diode) filament strip. The all-angle bendable LED filament strip comprises a plurality of LED filament strip units which are connected end to end in turn; the two adjacent LED filament strip units are connected with each other through a rotating part in a rotating mode; every LED filament strip unit comprises a plurality of LED chips which are fixed on a quartz substrate; the LED chips which are located on the LED filament strip units achieve circuit communication through the rotating parts. The invention also provides an antique LED bulb. The antique LED bulb comprises a capsule, a lamp holder, a power circuit, the LED filament strip and a supporting part; the LED filament strip units which are arranged in the LED filament strip bend into the preset angle at the positions of the flexible electrical connection plates and accordingly the preset shape of the LED filament strip can be formed integrally; the supporting part comprises a plurality of antennas which are supported at the positions of the flexible electrical connection plates of the LED filament strip units so as to maintain the preset bending angle; the power circuit is fixedly arranged at the bottom of the capsule integrally after being arranged inside the lamp holder.
Owner:江苏华英光宝科技有限公司

Back incident-type TiO* UV detector and preparation method thereof

The invention belongs to the field of semiconductor optoelectronic detectors, in particular relates to a back incident-type UV detector with quartz as a substrate, nano-TiO2 thin film as a basic UV detection material and Ni as a metal electrode, and a preparation method thereof. The detector takes the quartz as the substrate and adopts an M-S-M (metal-semiconductor-metal) structure. The method for manufacturing the UV detector comprises the steps of adopting a sol-gel technique to grow a TiO2 nanometer thin film on the quartz substrate, evaporating a layer of thin Ni on the prepared TiO2 thin film by a magnetron sputtering method to achieve electrode contact, and adopting lithography technology to obtain Ni inserted-finger shape electrodes. The UV detector in an MSM planar double schottky barrier structure adopts a back incident-type working mode and can greatly improve responsiveness. The detector has good detection performance for the UV rays 250 to 350 nm in wavelength.
Owner:JILIN UNIV
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