Growth method and growth device of large-size gallium oxide single crystal

Abstract

The invention relates to a growth method and a growth device of a large-size gallium oxide single crystal. The method comprises the steps of mounting a plurality of thermal field parts, which are used for heating and preserving heat to form a thermal field, in a single crystal furnace horizontally and concentrically; placing an iraurita crucible with a cover into the center of the thermal field, wherein an iraurita mould is embedded into the iraurita crucible; fixing a specifically-oriented beta-Ga2O3 seed crystal in a seed crystal clamp; placing a gallium oxide raw material into the iraurita crucible and covering the cover of the iraurita crucible; after vacuumizing, introducing mixed gas of Ar and CO2 according to the ratio of 9:1 to 8:2 until the pressure intensity of a furnace chamber is 1.05 to 1.5 MPa; performing induction heating so as to completely melt the gallium oxide raw material; inoculating after roasting the seed crystal for 5 to 10 minutes; after the seed crystal is in melting connection with the melt completely, seeding and necking until the sectional size of the seed crystal is reduced to be 1 to 2 mm; performing shouldering growth stage; performing constant-diameter growth stage; when the growth of the crystal is finished and the crystal is completely separated from the top end of the mould, stopping lifting and slowly cooling to room temperature to obtain the transparent, integrated, high-quality and sheet-like gallium oxide single crystal without crystal boundary.

Description

technical field [0001] The invention relates to a growth method and a growth device of a gallium oxide single crystal, in particular to a large-size, high-quality, flake gallium oxide single crystal growth method and a growth device, belonging to the technical field of crystal growth. Background technique [0002] β-Gallium Oxide (β-Ga 2 o 3 ) single crystal is a new wide bandgap oxide semiconductor material with unique UV transmission characteristics; it has a wide range of applications, not only for power components, but also for LED chips, various sensor components and imaging components. Among them, β-Ga 2 o 3 Single crystal as the substrate material of GaN is the most promising application. It combines the conductivity of silicon carbide and the light transmission of sapphire, and the (100) crystal plane has zero mismatch with the GaN lattice after surface nitriding reconstruction. . β-Ga 2 o 3 Has the following advantages: [0003] (1) It has conductivity, whic...

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Problems solved by technology

Due to its high melting point (1850°C), it has cleavage characteristics, and it is easy to decompose and volatilize during the growth process, so it grows large-size (1 inch and above), high-quality β-Ga 2 o 3 Single crystal is very difficult

At present, β-Ga is mainly prepared by floating zone method in China. 2 o 3 Single crystal, the crystal size is small, which cannot meet the requirements of the substrate substrate

The β-Ga grown by traditional guided mode method 2 o 3 Single crystal, common problems such as bubbles, growth streaks, cleavage cracking, polycrystalline, etc., seriously affect the crystal quality

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