1572results about How to "High product yield" patented technology

A process for producing ethanol including a combination of biochemical and synthetic conversions results in high yield ethanol production with concurrent production of high value coproducts. An acetic acid intermediate is produced from carbohydrates, such as corn, using enzymatic milling and fermentation steps, followed by conversion of the acetic acid into ethanol using esterification and hydrogenation reactions. Coproducts can include corn oil, and high protein animal feed containing the biomass produced in the fermentation.

A process for producing ethanol including a combination of biochemical and synthetic conversions results in high yield ethanol production with concurrent production of high value coproducts. An acetic acid intermediate is produced from carbohydrates, such as corn, using enzymatic milling and fermentation steps, followed by conversion of the acetic acid into ethanol using esterification and hydrogenation reactions. Coproducts can include corn oil, and high protein animal feed containing the biomass produced in the fermentation.

In accordance with the present invention, a built-up bump pad structure and method for the same are provided. The bump pad structure includes a substrate, a bump pad disposed upon the substrate, a solder mask disposed upon the substrate defining an opening around the bump pad, and a conductive material deposited upon the bump pad such that the conductive material at least partially fills the opening around the bump pad.

The invention provides comprising variant amino acids in CDRs of antibody variable domains. These polypeptides provide a source of great sequence diversity that can be used as a source for identifying novel antigen binding polypeptides. The invention also provides these polypeptides as fusion polypeptides to heterologous polypeptides such as at least a portion of phage or viral coat proteins, tags, and linkers. Libraries comprising a plurality of these polypeptides are also provided. In addition, methods of and compositions for generating and using these polypeptides and libraries are provided.

The invention provides variant hypervariable regions comprising selected amino acid sequence diversity. Libraries comprising a plurality of these polypeptides are also provided. In addition, methods of and compositions for generating and using these polypeptides and libraries are provided.

A substrate has at least one recess and / or protrusion formed in and / or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and / or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.

A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure. The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.

The present invention relates to a method for manufacturing a large FRP member and has the following structure. The method for manufacturing a large FRP member, comprising the following steps (A) to (F). They are: setting step (A) of disposing a preform containing a reinforcing fiber base material on a surface of a molding die; sealing step (B) of covering a molding portion with a bagging material or a mold and providing at least one suction port and at least one resin injection port for sealing; evacuating step (C) of evacuating the molding portion through the suction port; hot-air heating step (D) of heating the molding portion by hot air; resin injection step (E) of injecting a thermosetting resin from the resin injection port for impregnating the reinforcing fiber base material with the resin while a temperature Tm of the molding die and a temperature Tv of the bagging material or the mold are both set to room temperature or more, and a difference DeltaT in temperature between the Tm and the Tv is set to 10° C. or less; and curing step (F) of curing the resin by maintaining the molding portion at a predetermined temperature Tpc which is equal to or more than room temperature. Preferably, the preform described above includes the reinforcing fiber base material and a resin distribution medium. In addition, it is preferable that in the hot-air heating step (D), the molding die be placed in a sealed chamber which is heat insulated with a heat insulating material, the hot air be circulated and supplied, and timing of starting the injection of the resin from a plurality of the resin injection ports be controlled in accordance with signals supplied from resin detection sensors provided in the molding die. The present invention provides a method for manufacturing a large FRP member having superior quality at an inexpensive cost and with high production yield, in which non-impregnated portions and voids are unlikely to be formed.

A method for reducing shunt-related defects is described for hydrogenated amorphous silicon (a-Si:H) thin film photovoltaic modules with thin active a-Si:H absorber as required by building integrated photovoltaic windows and sun-roofs with adequate transmission of sunlight. Without shunt-passivation, p-i-n type large area photovoltaic modules with very thin a-Si:H i-layer will suffer excessive performance, yield, and reliability losses due to electrical shorting through i-layer defects. Wide-bandgap a-Si:H based alloy films of sufficient resistivity are deposed between the active solar cell and the conductive back electrode to provide a barrier to leakage current flow. Such a-Si:H based barrier films of high optical transparency are dummy films that do not directly contribute to energy conversion. The shunt-passivation films are entirely produced by the same conventional manufacturing process for a-Si:H photovoltaic devices without invoking complicated or exotic materials or procedures proposed in prior arts.

Process for the purification of toluenediisocyanate from a crude distillation feed comprising toluenediisocyanate, an organic solvent and less than 2% by weight phosgene by separating the crude distillation feed in a dividing-wall distillation column into at least four product fractions P1-P4. P1 is a phosgene enriched low-boiler product, P2 is a solvent-enriched product, P3 is a high boiler enriched bottoms and P4 is a toluenediisocyanate product stream.

A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater than a MTJ top electrode and serves as an etch stop during bit line etching to prevent sub-trenches from forming adjacent to the top electrode and causing shorts. MCBs also prevent insufficient etching that causes open circuits. A MCB is preferably a metal, metal compound, or alloy such as Ta with low resistivity and high conductivity. The MCB layer is patterned prior to using a dual damascene process to form a bit line contacting each MCB and a bit line pad connection to a word line pad. MCB thickness is thin enough to allow a strong bit line magnetic field for switching a free layer and large enough to function as an efficient oxide etch stop.

A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.