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Gallium oxide film based on sapphire substrate and growing method of gallium oxide film

A sapphire substrate and gallium oxide technology, which is applied in the field of microelectronics, can solve the problems of poor surface morphology and small grain size of Ga2O3 films, and achieve the effects of improving surface morphology, improving crystal quality, and increasing coverage

Inactive Publication Date: 2015-10-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, at present, the Ga2O3 thin film deposited by PLD adopts a single growth method, that is, the same process parameters are used during the growth process, including oxygen pressure, laser energy, substrate temperature, etc., so that PLD technology can be used on sapphire substrates. Poor surface morphology and small grain size of Ga2O3 films obtained by heteroepitaxial

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  • Gallium oxide film based on sapphire substrate and growing method of gallium oxide film
  • Gallium oxide film based on sapphire substrate and growing method of gallium oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Example 1, a gallium oxide thin film with a buffer layer thickness of 7 nm was fabricated.

[0030] Step 1, cleaning the sapphire substrate.

[0031] (1a) Soak the sapphire substrate in a mixture of sulfuric acid and phosphoric acid for 30 minutes, the ratio of sulfuric acid and phosphoric acid is 3:1;

[0032] (1b) Clean the sapphire substrate with acetone and absolute ethanol for 6 min respectively;

[0033] (1c) Rinse the sapphire substrate with deionized water and blow dry with dry nitrogen.

[0034] Step 2, growing a gallium oxide buffer layer with a thickness of 7 nm.

[0035] (2a) Put the cleaned sapphire substrate into the pulsed laser deposition PLD chamber, and pump the vacuum degree of the pulsed laser deposition PLD chamber to 10 -6 mbar, the distance between the substrate and the gallium oxide target is adjusted to 50mm, and the speed of the target is kept at 30rpm;

[0036] (2b) Heat the sapphire substrate to 500°C, adjust the oxygen partial pressure i...

Embodiment 2

[0043] Example 2, making a gallium oxide thin film with a buffer layer thickness of 12nm.

[0044] The first step is to clean the sapphire substrate.

[0045] This step is the same as Step 1 of Example 1.

[0046] In the second step, a gallium oxide buffer layer with a thickness of 12nm is grown.

[0047] 2.1) Put the cleaned sapphire substrate into the pulsed laser deposition PLD chamber, and pump the vacuum degree of the pulsed laser deposition PLD chamber to 10 -6 mbar, the distance between the substrate and the gallium oxide target is adjusted to 50mm, and the speed of the target is kept at 30rpm;

[0048] 2.2) Heat the sapphire substrate to 570°C, adjust the oxygen partial pressure in the pulsed laser deposition PLD chamber to 0.015mbar, set the laser energy to 450mJ, the laser frequency to 3Hz, and the number of pulses to 1600 to grow the Ga2O3 buffer layer;

[0049] 2.3) After the growth of the buffer layer is completed, the pulsed laser deposition PLD chamber is fil...

Embodiment 3

[0060] Example 3, making a gallium oxide thin film with a buffer layer thickness of 10 nm.

[0061] Step A, cleaning the sapphire substrate.

[0062] The implementation of this step is the same as step 1 in Embodiment 1.

[0063] Step B, growing a gallium oxide buffer layer with a thickness of 10 nm.

[0064] (B1) Put the cleaned sapphire substrate into the pulsed laser deposition PLD chamber, and pump the vacuum degree of the pulsed laser deposition PLD chamber to 10 -6 mbar, the distance between the substrate and the gallium oxide target is adjusted to 50mm, and the speed of the target is kept at 30rpm;

[0065] (B2) Heating the substrate to 600°C, adjusting the oxygen partial pressure in the pulsed laser deposition PLD chamber to 0.02mbar, setting the laser energy to 460mJ, the laser frequency to 3Hz, and the number of pulses to 1400 to grow a Ga2O3 buffer layer;

[0066] (B3) After the growth of the buffer layer is completed, 200 mbar of oxygen is filled into the pulsed...

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Abstract

The invention discloses a gallium oxide film based on a sapphire substrate and a growing method of the gallium oxide film to mainly solve the problems that an existing gallium oxide film is poor in surface appearance and small in grain size. The gallium oxide film comprises the sapphire substrate (1) and a gallium oxide epitaxial layer (3). The gallium oxide film is characterized in that a 7-12 nm gallium oxide buffering layer (2) is arranged between the sapphire substrate (1) and the gallium oxide epitaxial layer (3), and the crystal quality of the gallium oxide buffering layer is improved through thermal annealing. The roughness of the surface of a Ga2O3 film is reduced, the surface appearance of the Ga2O3 film is improved, the grain size of Ga2O3 is increased, and the gallium oxide film can be used for manufacturing a semiconductor power device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for growing semiconductor materials, in particular to a Ga2O3 thin film manufacturing method, which can be used for manufacturing semiconductor power devices. Background technique [0002] In recent years, the third-generation semiconductors represented by SiC and GaN have been widely used due to their characteristics such as large band gap, high breakdown electric field, high thermal conductivity, high saturation electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. focus on. Although the third-generation semiconductor materials and devices have made significant progress and have entered the stage of practical application, their wide-ranging applications are still limited due to many defects in SiC and GaN materials. For this reason, on the basis of the growth of SiC and GaN materials, device manufacturing and ...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B29/16
Inventor 冯倩李付国代波谢文林徐通郝跃
Owner XIDIAN UNIV
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