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Molybdenum disulfide nano-hydrangea structural semiconductor material and preparation method thereof

A technology of molybdenum disulfide and nano hydrangea, which is applied in the direction of molybdenum sulfide, nanotechnology, nanotechnology, etc., can solve the problems of unfavorable large-scale industrial production, high production cost, harsh reaction conditions, etc., and achieve great development and application potential and low cost low cost and simple method

Inactive Publication Date: 2015-04-29
EAST CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, most of the current preparation methods have harsh reaction conditions and high production costs, which are not conducive to large-scale industrial production.

Method used

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  • Molybdenum disulfide nano-hydrangea structural semiconductor material and preparation method thereof
  • Molybdenum disulfide nano-hydrangea structural semiconductor material and preparation method thereof
  • Molybdenum disulfide nano-hydrangea structural semiconductor material and preparation method thereof

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Embodiment Construction

[0025] The present invention will be further described in detail in conjunction with the following specific embodiments and accompanying drawings. The process, conditions, reagents, experimental methods, etc. for implementing the present invention are general knowledge and common knowledge in the art except for the content specifically mentioned below, and the present invention has no special limitation content.

[0026] The specific preparation steps of molybdenum disulfide nano hydrangea structure semiconductor material in this embodiment are as follows:

[0027] (1) Dissolve 0.1g of sodium molybdate, 0.2g of thioacetamide, and 0.7g of oxalic acid in 20ml of deionized water, and stir magnetically for 20 minutes to form a uniform solution. Pour into the thioacetamide solution while stirring magnetically for 10 min. Then, the prepared oxalic acid solution was slowly poured into the above mixed solution, and after magnetic stirring for 10 minutes, 10 ml of deionized water was ...

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Abstract

The invention discloses a molybdenum disulfide nano-hydrangea structural semiconductor material. The molybdenum disulfide nano-hydrangea structural semiconductor material comprises hierarchical nano-balls, wherein each nano-ball is formed by agglomerating molybdenum disulfide nano scales with the thickness of 2 to 4 nm. The invention further discloses a preparation method for the molybdenum disulfide nano-hydrangea structural semiconductor material. The molybdenum disulfide nano-hydrangea structural semiconductor material is synthesized by a one-step hydrothermal method, and is prepared by respectively dissolving sodium molybdate, thioacetamide and oxalic acid, mixing and reacting. The molybdenum disulfide nano-hydrangea structural semiconductor material and the preparation method thereof have the advantages of low cost, relatively low growth temperature and relatively high repeatability, and have a wide application prospect in the aspect of field emission.

Description

technical field [0001] The invention relates to the technical field of designing optoelectronic materials, semiconductor materials and devices, and specifically relates to a molybdenum disulfide nano hydrangea structure semiconductor material and a preparation method thereof. Background technique [0002] MoS 2 It is a transition metal sulfide with a narrow band gap, and it is also a typical two-dimensional layered semiconductor material. Each layer is composed of a sandwich structure formed by a molybdenum atomic layer and two sulfur atomic layers. are held together by weak van der Waals forces. Due to this layered structure, MoS 2 The nanomaterials have unique electrical, optical, catalytic and other properties, and are used in lithium-ion battery electrodes, supercapacitors, gas sensors, photocatalysis and other fields. So, MoS 2 Nanomaterials have attracted the attention of many researchers. [0003] Recently, various methods have been used to prepare MoS with vario...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06B82Y40/00B82Y30/00
CPCC01G39/06C01P2002/72C01P2004/03C01P2004/62C01P2006/90
Inventor 郁可谭英华朱自强
Owner EAST CHINA NORMAL UNIV
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