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BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use

A technology of nonlinear optics and compounds, applied in selenium/tellurium compounds, chemical instruments and methods, inorganic chemistry, etc., can solve problems affecting practical use, low optical damage threshold, slow development of nonlinear crystals, etc.

Active Publication Date: 2013-03-20
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

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  • BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use
  • BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use

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Embodiment 1

[0043] Embodiment 1, prepare powdery BaGa 2 GeSe 6 Compound:

[0044] Using BaSe+Ga 2 Se 3 + GeSe 2 =BaGa 2 GeSe 6 Reaction formula to prepare BaGa by solid state reaction method 2 GeSe 6 compound;

[0045] The BaSe is 4.326 g, the Ga 2 Se 3 7.527 g, the GeSe 2 It is 4.611 grams; namely BaSe: Ga 2 Se 3 : GeSe 2 =0.02mol:0.02mol:0.02mol;

[0046] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a quartz tube of Φ12mm×16mm, and evacuate them to 10 -3 After pa, the quartz tube was melted and packaged with a hydrogen-oxygen flame, put into a muffle furnace, and slowly raised to 900°C, the heating rate was 50°C / hour, and the temperature was kept constant for 48 hours. After cooling, take it out, take out the sample and grind it again. Then put it in a quartz tube and vacuumize it, and sinter it in a muffle furnace at 850°C for 24 hours. At t...

Embodiment 2

[0047] Embodiment 2, prepare powdery BaGa 2 GeSe 6 Compound:

[0048] Adopt BaSe+2Ga+Ge+5Se=BaGa 2 GeSe 6 Reaction formula to prepare BaGa by solid state reaction method 2 GeSe 6 Compound; the BaSe is 4.326 grams, the Ga is 2.789 grams, the Ge is 1.452 grams, and the Se is 7.896 grams, i.e. BaSe: Ga: Ge: Se=0.02mol: 0.04mol: 0.02mol: 0.10mol ;

[0049] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and vacuumize to 10 -3 After pa, melt and package the quartz tube with a flame, put it into a muffle furnace, and slowly raise it to 950°C with a heating rate of 10°C / hour, and keep the temperature constant for 48 hours. Vacuum-encapsulated in a quartz tube, sintered in a muffle furnace at 900°C for 24 hours, the sample shrank into a block; it was taken out, crushed and ground in a mortar to prepare powdered BaGa 2 GeSe 6...

Embodiment 3

[0050] Embodiment 3, prepare powdery BaGa 2 GeSe 6 Compound:

[0051] Using BaSe+Ga 2 Se 3 +Ge+2Se=BaGa 2 GeSe 6 ; Reaction formula prepares BaGa by solid state reaction method 2 GeSe 6 Compound; The BaSe is 4.326 grams, the Ga 2 Se 3 is 7.527 grams, the Ge is 1.452 grams, and the Se is 3.158 grams, namely BaSe: Ga 2 Se 3 : Ge: Se=0.02mol: 0.02mol: 0.02mol: 0.04mol;

[0052] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosage, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and evacuate them to 10 -3 After pa, the quartz tube was melted and packaged with a flame, put into a muffle furnace, and slowly raised to 900°C, the heating rate was 30°C / hour, and the temperature was kept constant for 48 hours. Vacuum-encapsulate in a quartz tube, sinter in a muffle furnace at 900°C for 24 hours, take it out, put it in a mortar, smash and grind it to get powdered BaG...

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Abstract

The invention relates to a BaGa2GeSe6 compound, a BaGa2GeSe6 non-linear optical crystal and their preparation methods and use. The BaGa2GeSe6 compound is prepared by a solid-phase reaction. The BaGa2GeSe6 non-linear optical crystal grows by a high-temperature melt spontaneous crystallization method or a Bridgman-Stockbarger method. In growth, the BaGa2GeSe6 non-linear optical crystal easily grows, is transparent and is not coated. The BaGa2GeSe6 non-linear optical crystal has the advantages of fast growth rate, low growth temperature, low cost, and easiness of production of large-size crystals. The BaGa2GeSe6 non-linear optical crystal has a wide light transmittance wave band, large hardness and good mechanical properties, is broken and air-slaked difficultly, and is processed and preserved easily. The BaGa2GeSe6 non-linear optical crystal can be used for manufacture of non-linear optical devices.

Description

technical field [0001] The present invention relates to a kind of BaGa 2 GeSe 6 Compound, BaGa 2 GeSe 6 nonlinear optical crystals (BaGa 2 GeSe 6 single crystal) and the BaGa 2 GeSe 6 Single crystal preparation method and the BaGa 2 GeSe 6 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths...

Claims

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Application Information

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IPC IPC(8): C01B19/00C30B29/46C30B11/00C30B33/02
Inventor 姚吉勇尹文龙冯凯梅大江傅佩珍吴以成
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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