36results about How to "Low preparation requirements" patented technology

The present invention relates to double laser beam synchronizing welding method and apparatus for T-shaped joint. The present invention features that the laser beam from one laser source is split into two laser beams, which are focused onto two sides of the T-shaped joint with two independent welding heads, and two welding powder feeders are used to convey powder to two sides of laser molten pool for sync welding. For realizing the said sync welding, one welder is proposed, which has one laser to produce main laser beam, one laser splitting and focusing unit to form two sync laser beams, and one powder feeder to produce two powder flows. The sync welding from two sides of the T-shaped joint results in high welding efficiency, and simultaneous cooling and contraction of two-in-one molten pool favorable to control in the stress and deformation.

The invention provides a fluorescent mark immunity test strip detector, belonging to the technical field of fluorescent mark immunity sample test strip detection. The structure comprises an optical system, a testing jig (1), a shell (8), a data collecting system and a control system; wherein the optical system comprises an excitation light source (3), a light filter (4) and a dim light CCD sensor (6); the data collecting system consists of a dim light CCD sensor data collecting circuit and a PC; the control system comprises a light reverse feed back constant light intensity automatic control circuit. Two excitation light source modes are provided in the invention, the excitation of 2-4 types of wave length can be switched, the structure is simple and reasonable, the operation is convenient and the different test requirements can be satisfied; the detailed distribution condition of the two fluorescent mark lines of a testing zone and a quality control zone on the test strip can be attained in one step; the image brightness of the CCD fluorescent mark line can be enhanced; the testing sensitivity can be improved; and the testing period of the test strip is shorter than 1min.

The invention discloses a multi-diameter rock core dual-ring direct tension rock tensile strength tester. The tester comprises three parts such as a loading system, a pressure monitoring and data acquisition system and a loading rack and sample clamping system. The loading system comprises an upper pressure disc, a ball head, a ball seat, a tower-shaped spring, a spherical hinge end cover, an oil cylinder, a lower pressure disc, a guide sleeve and a guide plate. The pressure monitoring and data acquisition system comprises a sensor and data acquisition subsystem, a pressure digital display screen, a monitoring compression gauge and a notebook computer data acquisition subsystem. The loading rack and sample clamping system comprises a diameter-variable rock sample inner ring pressure disc, a diameter-variable rock sample outer ring pressure disc, a lower crossbeam, stand columns, stand column fixed rings and an upper crossbeam. The tester can monitor and record the whole rock sample drawing damage test process, fast determine a tensile strength quantitative value in direct drawing of a rock, has a rigorous and reliable test principle and process and fill a gap in the research field at home.

The invention relates to a zirconium base amorphous composite material, containing a main material shown as the general formula: [(Zr1-xHfx)52Al10Cu30.5(Ni1-yFey)7.5)100-a-bYaMb, wherein x is the ratio of the atomic number of Hf to the total atomic number of Hf and Zr, and x ranges from 0 to 0.3; y is the ratio of the atomic number of Fe to the total atomic number of Fe and Ni, and y ranges from 0 to 0.3; a is the atomic percentage of Y, b is the atomic percentage of M, a is more than 0 and less than or equal to 8, and b is more than or equal to 0.01 and less than or equal to 15; M is one or more of La series metal elements, Ti, V, Nb, Ta, Cr, Mo, W, Mn and Si; and by taking the total volume of the zirconium base amorphous composite material as a reference, the content of an amorphous phase in the amorphous composite material is 50-95%, and the content of a crystalline phase is 5-50%. The zirconium base amorphous composite material provided by the invention has good comprehensive performance..

The invention relates to a method for etching gallium nitride nano-wire array by using a dry method, which is characterized in that nano-particle lattice of metal Ni is taken as a mask film and the nano-particle lattice of Ni is manufactured by anodic alumina; in the manufacture of the nano-particle lattice of the GaN, first, a layer of metal As is deposited on a GaN template; second, vesicular anodic alumina is generated by adopting an electrochemical method; then, an electron beam evaporates a layer of metal Ni layer and the anodic alumina is removed by alkaline liquor. As pore arrangement and aperture size of the anodic alumina are uniform, the nano-particle lattice of the metal Ni can be obtained on the GaN template. Then, the template is placed in inductively coupled plasma or a reaction chamber reacting ion etching to be etched; at last, Ni nano-particle is removed by acid to obtain the nano-wire array of GaN. The method provided by the invention is simple and easy and the manufactured nano-wire array of GaN is applicable to the manufacture of photoelectric devices such as LED or LD.

Multihole GaN substrate growth method in hydride gas phase epitaxy (HVPE) gallium nitride (GaN) material. It features first making multihole GaN substrate mask, then putting mask in induction coupling plasma to proceed etching, using acid or aqueous alkali removing anode aluminium oxide to obtain multihole GaN substrate, putting above-mentioned substrate in oxide epitaxial growth reaction chamber, heating up to 750-850 degree centigrade under N2 ambience, filling NH3 to protect templet GaN layer, filling HCL to proceed GaN growth at 1000-1100 degree centigrade. The present invention only need corrosion depositing on GaN surficial metal Al layer adopting electrochemical method, to make multihole network structure use as GaN epitaxial mask, greatly simplifying photo etching making mask technology.

The invention provides a continuous detector for multi-wavelength excited fluorescence labeling immune test strips and belongs to the technical field of fluorescence labeling immune sample detection. The continuous detector consists of a mechanical transmission system, an optical system and an image acquisition system. Fluorescence labeling immune test strips in a test strip placing groove (17) fall into a test strip chute (3) and are pushed to a light source turntable (18) by a rotating chute disk (1) to be detected. An LED excitation light source (12), a slit (13) and a light filter (14) are mounted at the rectangular hole in the light source turntable (18), and fluorescent light is subjected to stray light filtration, focused by a focusing lens (15), then received by a CCD linear array sensor (16) and finally treated by the image acquisition system to realize detection of the immune test strips. The continuous detector has the advantages that continuous on-line detection and different-wavelength fluorescence test strip detection are achieved, light intensity control is realized to lower the test strip preparation demands, noise is eliminated effectively, the wave crests of the detected fluorescent light are accurately read, and the detection precision is improved.

The invention relates to a method for controlling the hardness of low-alloy high-strength steel laser composite welds, which belongs to the technical field of welding engineering. In the invention, consumable electrode arc is positioned before the laser focus along the welding direction, the distance between the consumable electrode arc and the laser focus is controlled, so as to lead interaction to be maintained between the laser induced plasma of the laser and the plasma of the consumable electrode arc and to form a molten pool; the molten pool is shallow in the covering area of the consumable electrode arc, and deep in the laser induced plasma area; non-consumable electrode arc is positioned behind the laser focus along the welding direction, the distance between the non-consumable electrode arc and the laser focus is controlled, so that no marked interaction can appear between the laser induced plasma and the plasma of the non-consumable electrode arc, and simultaneously the non-consumable electrode arc is stably burnt with the assistance of the laser induced plasma. The method enhances the absorbing capacity of a work piece to the laser power, improves the bridging capability of laser welding, reduces the cooling rate of the welding seam and the microhardness of the connector, and improves the mechanical properties of the welding seam.

The invention provides a contact angle measuring instrument which comprises a mounting structure (10), a light source (20), an imaging device (30) and a loading structure (40). The light source and the imaging device are arranged at intervals on the mounting structure. The loading structure is movably arranged between the light source and the imaging device in the horizontal direction. The loading structure (40) comprises an objective table (41) used for placing samples and also comprises an angle adjustment structure (42) arranged below the objective table (41). The angle adjustment structure (42) enables the objective table (41) to be angle-adjustably arranged between the light source (20) and the imaging device (30). By the technical scheme, problems of a contact angle measuring instrument in the prior art, such as difficulty in image analysis in later stage and large measurement error, can be effectively solved.

A routing-free LED packaging structure and a preparation method therefor are disclosed. The routing-free LED packaging structure comprises an LED chip and a die-bonding substrate; the LED chip is arranged on the die-bonding substrate in a side-down manner; the LED chip and the die-bonding substrate are glued through insulation die-bonding adhesive; the side face of the side-down LED chip is coated with the insulation die-bonding adhesive; conductive silver adhesive for enabling the LED chip and the die-bonding substrate to be electrically communicated is coated on the insulation die-bonding adhesive on the side face of the LED chip; the LED chip is arranged in the side-down manner; the LED chip is glued on the die-bonding substrate through the insulation die-bonding adhesive; meanwhile, the insulation die-bonding adhesive is coated on the periphery, the side faces and the bottom of the side-down LED chip and then the LED chip is roasted and cured; the conductive silver adhesive is dispensed on the insulation die-bonding adhesive on the side face of the LED chip and then the LED chip is roasted and cured; and the LED chip is wrapped with potting adhesive. According to the preparation method, the LED chip is arranged in the side-down manner, and then die-bonding for two times by the die-bonding glue is performed, so that the purpose of electrically communicating the chip with the die-bonding substrate is fulfilled, and meanwhile, the light-emitting of the chip is reinforced, the packaging process is simple and the yield of the packaged product is high.

The invention relates to an enhanced composite graphite electrode and a manufacturing and using method of the enhanced composite graphite electrode. Due to the fact that an electrode shell comprises carbon fibers, the compressive strength of an outer shell is doubled, and the outer shell does not generate cracks caused by heat stress. By using the principle of surficial skin effect of a current conductor, the enhanced composite graphite electrode is good in electrode conductivity, can reduce energy consumption, and reduce manufacturing cost, and is simple in structure, convenient, and safe and reliable in operation.

The invention relates to a cellulose microsphere with uniform size, and a preparation method thereof. The preparation method comprises: atomizing cellulose dissolved in an alkali solution into small liquid droplets, making the small liquid droplets contact a high-temperature hot gas flow to cure, washing, and drying to obtain the regular spherical particles with uniform size and highly concentrated particle size distribution. With the method of the present invention, the influence of the surface tension of the traditional curing agent solution on the shape and the structure of the microsphereparticles is avoided, the addition of the emulsifier is not required during the preparation of the cellulose solution, the product contains less impurities, and the cost is low, such that the method is suitable for industrialization.

The invention discloses a method for synthesizing femto-second grade ultrashort pulses based on cerenkov radiation. The method includes the steps that 1, a reference light path is established, non-linear crystals are put on a six-dimension rotary horizontal-movement platform, the angle of the non-linear crystals is adjusted by rotating the six-dimension rotary horizontal-movement platform, and therefore non-linear cerenkov radiation occurs on the inner surfaces of the non-linear crystals; 2, according to the reflecting angle of incident laser on the inner surfaces of the non-linear crystals, the non-linear cerenkov radiation angle of each level of frequency doubling light in the crystals is determined; 3, fundamental frequency light, double frequency light, triple frequency light, quadruplicated frequency light, quintuple frequency light and higher-order frequency-doubling light generated by the incident laser emerge at own radiation angles, and are modulated by an amplitude type liquid crystal light modulator and a phase type liquid crystal light modulator, parallel transmission directions of all orders of light waves are changed into converging transmission directions through a second dispersing prism, and the light waves are synthesized into one beam of femto-second grade ultrashort pulses through a third dispersing prism. With the method, the synthesizing process of femto-second grade light wave is achieved, efficiency is high, and fidelity is high.

The invention relates to a method for controlling the hardness of low-alloy high-strength steel laser composite welds, which belongs to the technical field of welding engineering. In the invention, consumable electrode arc is positioned before the laser focus along the welding direction, the distance between the consumable electrode arc and the laser focus is controlled, so as to lead interactionto be maintained between the laser induced plasma of the laser and the plasma of the consumable electrode arc and to form a molten pool; the molten pool is shallow in the covering area of the consumable electrode arc, and deep in the laser induced plasma area; non-consumable electrode arc is positioned behind the laser focus along the welding direction, the distance between the non-consumable electrode arc and the laser focus is controlled, so that no marked interaction can appear between the laser induced plasma and the plasma of the non-consumable electrode arc, and simultaneously the non-consumable electrode arc is stably burnt with the assistance of the laser induced plasma. The method enhances the absorbing capacity of a work piece to the laser power, improves the bridging capabilityof laser welding, reduces the cooling rate of the welding seam and the microhardness of the connector, and improves the mechanical properties of the welding seam.

The invention provides a method for determining single crystal graphene orientation. According to the method, the orientation of the copper substrate is obtained through the electron back scattering diffraction probe in the electron microscope, then the atomic arrangement of copper is obtained, and the orientation of graphene on the copper substrate is determined by comparing the atomic arrangement with the orientation of grown graphene with a regular shape. The method for determining the orientation of the graphene has the advantages of low difficulty in sample preparation and high accuracy and can better determine the orientation of the graphene, so that the invention provides help for large-area preparation of high-quality single-crystal graphene, and promotes the application of the graphene in the aspects of electricity and the like.

The invention discloses a spicy green pepper sauce and a preparation method thereof, and belongs to the technical field of chili sauce production and processing. The preparation method comprises the following raw materials in parts by weight: 56-80 parts of dried chilies, 3-5 parts of pickled chilies, 2-4 parts of pickled gingers, 2-4 parts of pickled capsicum frutescens, 9-11 parts of garlic, 15-23 parts of Chinese prickly ash, 56-68 parts of vegetable oil, 5-8 parts of thick broad-bean sauce, 3-5 parts of chicken essence seasoning, 2-4 parts of monosodium glutamate, 1-3 parts of cooking wine, 1-3 parts of soy sauce, 3-5 parts of spices, 2-4 parts of sesame seeds, 4-6 parts of white granulated sugar, 1-3 parts of salt and 0.5-1.5 parts of food additives. The spicy green pepper sauce and the preparation method thereof provided by the invention have the advantages that the ratio is reasonable, the taste is mellow, the color, fragrance and taste are good, the seasoning requirements of mixing noodles, mixing rice, dipping sauce, cooking dishes and steaming fish in daily diet of people loving to eat spicy peppers can be met, the application range is wide, and thus the applicable crowd is expanded.

The invention relates to a silicon dioxide nano particle dot matrix mask used in a GaN film of hydride gas phase epitaxial growth, and a preparation method thereof, characterized by that a SiO2 nano particle lattie is used as a mask for GaN transversely epitaxial over growth. A layer of metal Al is evaporated by electron beam on a GaN form board firstly. Porous anode alumina (AAO) is prepared by electrochemistry then. A layer of dielectric SiO2 layer is deposited then. AAO is removed by acid solutionor aqueous alkali. Therefore, dot matrix distribution of SiO2 nano particle is obtained on the GaN form board. After cleaning treatment, the form board as a substrate is put in a HVPE reaction chamber for GaN thick film growth. The invention simplifies the photo-etching mask manufacturing technology greatly, and reduces the size of the mask to nanometer level, while metal Al and SiO2 layer can be prepared through electron beam evaporation and sputtering method for batched production.

The invention relates to an enhanced composite graphite electrode and a manufacturing and using method of the enhanced composite graphite electrode. Due to the fact that an electrode shell comprises carbon fibers, the compressive strength of an outer shell is doubled, and the outer shell does not generate cracks caused by heat stress. By using the principle of surficial skin effect of a current conductor, the enhanced composite graphite electrode is good in electrode conductivity, can reduce energy consumption, and reduce manufacturing cost, and is simple in structure, convenient, and safe and reliable in operation.

The invention relates to a multi-valued storage unit based on the co-control of conductive filaments and polarization. The multi-valued storage unit based on the co-control of conductive filaments and polarization consists of a bottom electrode, a ferroelectric functional layer, a semiconductor Functional layer and top electrode; the multi-value storage unit realizes the characteristics of multi-value storage through the migration of the top electrode metal atoms in the semiconductor functional layer, and the polarization reversal and oxygen vacancy concentration change of the ferroelectric functional layer, which can realize non- Destructive reading and high storage density, in addition to simple operation, low operating voltage, and compatible with Si process, can realize low voltage writing and reading, overcome the ferroelectric tunnel junction in the past using probes to write and read multiple values Storage, the use of expensive substrates, expensive electrode materials, and the limitations of incompatibility with Si technology, and the realization of multi-value storage, is conducive to the realization of industrialization.

The invention discloses a multi-diameter rock core dual-ring direct tension rock tensile strength tester. The tester comprises three parts such as a loading system, a pressure monitoring and data acquisition system and a loading rack and sample clamping system. The loading system comprises an upper pressure disc, a ball head, a ball seat, a tower-shaped spring, a spherical hinge end cover, an oil cylinder, a lower pressure disc, a guide sleeve and a guide plate. The pressure monitoring and data acquisition system comprises a sensor and data acquisition subsystem, a pressure digital display screen, a monitoring compression gauge and a notebook computer data acquisition subsystem. The loading rack and sample clamping system comprises a diameter-variable rock sample inner ring pressure disc, a diameter-variable rock sample outer ring pressure disc, a lower crossbeam, stand columns, stand column fixed rings and an upper crossbeam. The tester can monitor and record the whole rock sample drawing damage test process, fast determine a tensile strength quantitative value in direct drawing of a rock, has a rigorous and reliable test principle and process and fill a gap in the research field at home.

The invention relates to a method for improving the quality of thick-film GaN by using a uniform nanoparticle lattice, which is characterized in that the nanoscale SiO2, SiO or SixNy lattice is used as a GaN epitaxial mask. Before the hydride vapor phase epitaxy, a layer of metal Al is evaporated on the GaN template by electron beam, and then the porous anodic aluminum oxide (AAO) is formed by electrochemical method, and then the lattice structure medium is injected into the hole, and then the AAO is removed. , the lattice structure of uniformly distributed SiO2 nanoparticles is obtained on the template, and finally the template is placed in the reaction chamber for epitaxial growth. Due to the selectivity of vapor phase epitaxy, it will start to grow selectively on the area outside the lattice such as SiO2, and finally connect to a complete GaN film through the lateral epitaxial growth process. The dislocation density of the epitaxial layer is reduced, and the dislocation density is evenly distributed, which greatly improves the availability of thick films. The method is simple and easy, omits the complex process of photolithography, and reduces the size of the mask to nanometer level, which is suitable for mass production.

The invention relates to a multihole GaN substrate growth method in hydride gas phase epitaxy (HVPE) gallium nitride (GaN) material. It features first making multihole GaN substrate mask, then putting mask in induction coupling plasma to proceed etching, using acid or aqueous alkali removing anode aluminium oxide to obtain multihole GaN substrate, putting above-mentioned substrate in oxide epitaxial growth reaction chamber, heating up to 750-850 degree centigrade under N2 ambience, filling NH3 to protect GaN layer of the mask, filling HCL to proceed GaN growth at 1000-1100 degree centigrade. The present invention only need corrosion depositing on GaN surficial metal Al layer adopting electrochemical method, to make multihole network structure use as GaN epitaxial mask, greatly simplifying photo etching making mask technology.

The invention discloses a torasemide raw material. The torasemide raw material is prepared from the following components in parts by weight: 40-60 parts of torasemide and 3-10 parts of citric acid. According to the torasemide raw material, the requirements for the preparation process can be reduced, the production of too many related substances can be avoided, and the quality stability of productsis improved. The invention further provides a preparation method of the torasemide raw material.

In procedure for preparing GaN film through HVPE, an Al film layer is deposited on GaN template. Next, after anodic oxidation of electrochemical method, even porous meshy anodic alumina is formed. Then, GaN layer is developed in HVPE system. Porous anodic alumina can be used as mask in micro area since its pore diameter is small (10nm-200nm), pores are steep and distributed evenly. Because of selectivity of epitaxy in vapor phase, GaN is developed at lower layer of GaN in HVPE growth. Then, through procedure of lateral epitaxial growth, integrated GaN film is connected and formed. Advantages are: lowering dislocation density of GaN in growth, raising quality of GaN layer The invention simplifies technique for preparing mask through photo etching and is suitable to mass production.

The invention which relates to a method for preparing GaN nanometer lines by assisting the thermal annealing with tungsten is characterized by adopting the metallic tungsten (W) as a catalyst; in theprocess of preparing the GaN nanometer lines with the thermal annealing, a GaN nanometer line is formed through thermal annealing in the atmosphere of N2 after a thin W layer is evaporated from electron beams of a GaN template. The metallic tungsten thin film is introduced as the catalyst for the growth GaN nanometer lines, and the metallic W can aggregate at high temperature while the GaN at a lower layer is decomposed to cause the metallic W layer to form separate porous netted structure so as to expose partial GaN films, and at the same time, the separated metallic Ga and N atoms are combined into slender GaN nanometer lines under the effect of the catalyst of metallic W. The method is simple and easily implemented only by depositing or sputtering a thin metallic W layer and is suitablefor scientific experiments and batching production.

The present invention features that during hydride vapor phase epitaxy (HVPE) of preparing GaN film, low temperature AlN insert layer structure is adopted. During HVPE of preparing GaN film, one AlN film is first low temperature deposited, and after high temperature annealing, further HVPE grows GaN layer. The introduction of low temperature AlN insert layer releases the stress of GaN film further growing on the low temperature AlN insert layer to raise the quality of GaN film. The method is simple and feasible, and has no strict requirement on the crystallization quality of low temperature AlN insert layer. The method may be adopted in scientific experiment and mass production, and the AlN layer may be prepared through chemical vapor phase deposition, molecular beam epitaxy, sputtering or other process.

A preparation method and application of an aluminum-based liquid-cooled heat dissipation structure, which relate to a preparation method and application of a heat dissipation structure. The invention aims to solve the problem that the existing traditional foam material has low strength and is easily deformed and broken under high vibration and impact working conditions. Preparation method: 1. Preparation of foamed aluminum structure; 2. Injection of liquid-cooled matrix. Application: Aluminum-based liquid-cooled heat dissipation structure is used for heat dissipation of electronic circuit system or battery system. The invention is used for the preparation and application of an aluminum-based liquid-cooled heat dissipation structure.

The invention relates to a preparation method of transition metal phosphide Co2P, which belongs to the technical field of transition metal phosphide synthesis. In the preparation method of the present invention, the copper-phosphorus alloy is used as the phosphorus source, and the copper-cobalt alloy or cobalt is used as the cobalt source, and the cobalt source and the phosphorus source are first smelted into a metal ingot in a vacuum arc melting furnace; Co2P can be obtained by treating the iron solution until no bubbles overflow. The phosphorus source of the invention is non-toxic, stable in nature and cheap, and is easy to melt with the cobalt source; the time required for full melting is short; the melting process is stable, easy to control and safe. Vacuum arc melting furnace is used for melting, and the temperature can be controlled by adjusting the frequency, making the melting process adjustable and easy to control, while ensuring the yield of 98.7-100%; using ferric chloride solution for treatment, so that the product purity is as high as 99.3-100% , and at the same time ensure that Co2P is a porous structure with many, small and uniform pores, large specific surface area and high activity.