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Growth method for gallium nitride film using multi-hole gallium nitride as substrate

A substrate, epitaxial growth technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as low stress, improve crystal quality, reduce dislocation density, and simplify the electrochemical corrosion process.

Inactive Publication Date: 2011-04-20
DAHOM FUJIAN ILLUMINATION TECH
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  • Application Information

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Problems solved by technology

Therefore, porous anodized aluminum can be used as a mask to make steep porous GaN [Y.D.Wang, et.al.Appl.Phys.Lett., V85, 816, 2004]. However, there is no report on the use of HVPE to grow high-quality GaN films with low dislocation density and low stress.

Method used

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  • Growth method for gallium nitride film using multi-hole gallium nitride as substrate
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  • Growth method for gallium nitride film using multi-hole gallium nitride as substrate

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Embodiment 1

[0027] First, MOCVD was used to grow Al 2 o 3GaN on the substrate is used as a template, and then a thin layer of metal Al with a thickness of 70nm is deposited on the template by electron beam evaporation at a temperature of 300°C, and then the template with the metal layer is placed in an oxalic acid solution (0.3mol / L ), use 40 volts to oxidize at room temperature for 4 minutes, and then soak the template in phosphoric acid solution (5wt%) for 30 minutes to remove the part of the aluminum oxide at the bottom of the hole that is in contact with the lower layer of GaN, so that the etched Mask of porous GaN. Then put the template into inductively coupled plasma (ICP) for etching, and then use 0.2 mol / L NaOH solution to remove the anodized aluminum, thus obtaining the porous GaN substrate. Finally put the substrate into the HVPE reaction chamber, under N 2 The atmosphere is heated to 800°C, and NH 3 The GaN layer of the protection template is grown by HCl at 1050°C. The sa...

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Abstract

The invention relates to a multihole GaN substrate growth method in hydride gas phase epitaxy (HVPE) gallium nitride (GaN) material. It features first making multihole GaN substrate mask, then putting mask in induction coupling plasma to proceed etching, using acid or aqueous alkali removing anode aluminium oxide to obtain multihole GaN substrate, putting above-mentioned substrate in oxide epitaxial growth reaction chamber, heating up to 750-850 degree centigrade under N2 ambience, filling NH3 to protect GaN layer of the mask, filling HCL to proceed GaN growth at 1000-1100 degree centigrade. The present invention only need corrosion depositing on GaN surficial metal Al layer adopting electrochemical method, to make multihole network structure use as GaN epitaxial mask, greatly simplifying photo etching making mask technology.

Description

technical field [0001] The invention relates to a method for growing GaN films in hydride vapor phase epitaxy (HVPE) using porous GaN (gallium nitride) as a substrate. The invention aims at improving the quality of epitaxially grown GaN materials and growing low-stress GaN films, and belongs to the technical field of material preparation. technical background [0002] In recent years, HVPE technology has been widely used in the preparation of GaN materials. Due to the high growth rate, simple equipment and low preparation cost of this material growth method, it is a main method for preparing self-supporting GaN substrates. People have successfully prepared thick-film GaN substrates using this method [R.J.Molnar et al.J.Cryst.Growth, V178, 147, 1997]. Since the current HVPE epitaxial thick film GaN usually uses Al 2 o 3 , GaAs and other substrates, their lattice mismatch and thermal mismatch with GaN materials are relatively large, so there are large stress and high disl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
Inventor 雷本亮于广辉王笑龙齐鸣孟胜李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH
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