Application of alumina as mask for growing gallium nitride film by hydride vapour-phase epitaxial

A hydride vapor phase, epitaxial growth technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reducing the density of material growth defects, and achieve improved availability, low preparation requirements, and uniform distribution. Effect

Inactive Publication Date: 2010-01-13
DAHOM FUJIAN ILLUMINATION TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far there is no report on the combination of the two, that is, the use of porous anodized aluminum as a mask in the process of growing GaN film by HVPE to reduce the defect density of material growth.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application of alumina as mask for growing gallium nitride film by hydride vapour-phase epitaxial

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] grown on Al by MOCVD 2 o 3 GaN on the substrate is used as a template, the thickness of the template is 20 microns, and then a thin layer of metal Al with a thickness of 2 μm is deposited on the template by electron beam evaporation at a temperature of 500 ° C, and then the template with the metal layer is placed in oxalic acid Solution (0.3mol / L), at room temperature using a voltage of 40 volts for anodic oxidation for 40min, and then soak the template in phosphoric acid solution (5wt%) for 30min to remove the part of the aluminum oxide at the bottom of the hole that is in contact with the lower layer of GaN, In this way, a micro-region mask for GaN growth is made. Then put the template into the HVPE reaction chamber, under N 2 The atmosphere is heated to 800°C, and NH 3 The GaN layer of the protection template is grown by HCl at 1050°C. The sample measurement results show that the dislocation density of the GaN film grown by this method is 3 to 4 orders of magnitu...

Embodiment 2

[0024] Adopt the GaN that HVPE grows on SiC substrate to make template, template thickness 100 microns, adopt the sputtering method to deposit the Al thin film of 60nm then, then make porous network aluminum oxide mask as described in embodiment 1 technique, as growth GaN mask.

Embodiment 3

[0026] Adopt MBE method to grow GaN as template on GaAs substrate, thickness is 0.5 micron, then adopt the method for growing Al thin layer as embodiment 1, Al thin film thickness is 500nm, template is placed on sulfuric acid (15wt%) solution in sulfuric acid (15wt%) earlier to carry out Anodizing, then soaking in the mixed solution of phosphoric acid and chromic acid for 30 minutes, the mixed solution is prepared from 6wt% phosphoric acid and 1.8wt% chromic acid in a volume ratio of 1:1. The dislocation density of the last grown GaN film is greatly reduced, which is similar to that described in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Apertureaaaaaaaaaa
Login to view more

Abstract

In procedure for preparing GaN film through HVPE, an Al film layer is deposited on GaN template. Next, after anodic oxidation of electrochemical method, even porous meshy anodic alumina is formed. Then, GaN layer is developed in HVPE system. Porous anodic alumina can be used as mask in micro area since its pore diameter is small (10nm-200nm), pores are steep and distributed evenly. Because of selectivity of epitaxy in vapor phase, GaN is developed at lower layer of GaN in HVPE growth. Then, through procedure of lateral epitaxial growth, integrated GaN film is connected and formed. Advantages are: lowering dislocation density of GaN in growth, raising quality of GaN layer The invention simplifies technique for preparing mask through photo etching and is suitable to mass production.

Description

technical field [0001] The invention relates to the application of porous anodic aluminum oxide (AAO) as a mask when growing a gallium nitride (GaN) film by a hydride vapor phase epitaxy (HVPE) method. The invention aims at improving the quality of epitaxially grown GaN materials, and belongs to the technical field of material preparation. Background technique [0002] In recent years, HVPE technology has been widely used in the preparation of GaN materials. Due to the high growth rate, simple equipment and low preparation cost of this material growth method, it is a main method for preparing self-supporting GaN substrates. At present, thick-film GaN substrates have been successfully prepared by using this method [R.J.Molnar et al.J.Cryst.Growth, V178, 147, 1997]. Since the current HVPE epitaxial thick film GaN usually uses Al 2 o 3 , GaAs and other substrates, their lattice mismatch and thermal mismatch with GaN materials are relatively large, so there are large stress ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/31
Inventor 雷本亮于广辉齐鸣叶好华孟胜李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap