294results about How to "Enhanced glow" patented technology

Provision of a novel platinum complex which is useful as a material for a light-emitting device of good light emission characteristic and light emission efficiency, and a novel light-emitting material that may be utilized in various fields.A platinum complex represented by the following general formula (1):(in which two rings of ring A, ring B, ring C, and ring D represent nitrogen-containing heterocyclic rings which may have a substituent and the remaining two rings of them represent aryl rings or hetero aryl rings which may have a substituent, the ring A and the ring B, the ring A and the ring C or / and the ring B and the rind D may form condensed rings. Two of X1, X2, X3, and X4 represent nitrogen atoms coordination bonded to a platinum atom and the remaining two of them represent carbon atoms or nitrogen atoms. Q1, Q2, and Q3 each represents a bond, oxygen atom, sulfur atom or bivalent group, two of Z1, Z2, Z3, and Z4 represent coordination bonds, and the remaining two of them represent covalent bonds, oxygen atoms or sulfur atoms), and a light-emitting device containing the platinum complex.

A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface. Furthermore, a translucent conductive layer 17 is formed between reflective layer 16 and the nitride semiconductor layer of the second conductivity type, and an uneven interface 22 is formed as the interface between translucent conductive layer 17 and reflective layer 16.

A lighting assembly for illuminating an area is disclosed. The assembly includes a housing and at least one light socket disposed within the housing. The light socket is configured to receive at least one light source to emit light therefrom. The assembly also includes a reflective body disposed about the at least one light socket for uniformly disbursing the light, emitted from the light source, out of the lighting assembly. The reflective body includes an array of first reflectors and an array of second reflectors, each disposed about a central axis. Adjacent first reflectors are in an obtuse angular relationship with one another. Each of the second reflectors include a left face and a right face. A reflex angle is formed between the left and right faces of the second reflectors. Each of the adjacent second reflectors are in an obtuse angular relationship with one another.

The present invention provides a light emitting device comprising: an excitation light source which radiates excitation light; a wavelength converting member which absorbs and converts the wavelength of at least part of the excitation light radiated from the excitation light source, and releases light with a predetermined wavelength band; a light guide for guiding the excitation light radiated from the excitation light source to the wavelength converting member, with one end at the excitation light source and the other end at the wavelength converting member, wherein the refractive index of the cross-sectional center region (core) is higher than that of the circumferential region (clad); and a thermally conductive transparent film which contacts with the wavelength converting member.

A light guiding plate according to the invention is mounted in a vertical backlight module between an illumination element and a diffusion plate. The light guiding plate has a flat light incidence surface at a bottom of the light guiding plate and a light emergence surface at a top of the light guiding plate. The light incidence surface faces the illumination element. The light emergence surface is adjacent to the diffusion plate and has a concave portion right above the illumination element. The concave portion of the light guiding plate further diffuses the light transmitted right above the illumination element to homogenize the light emergence and increase the glow for display of the backlight module. The total thickness of the vertical backlight module thereby is reduced to minimize the volume of the backlight module.

To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.

A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of diffracting an electromagnetic wave. The nanocrystal structure is disposed on a surface portion of the substrate and includes an etched region and an unetched region, wherein the etched region has a depth of 10-200 nm. Due to the periodicity of the nanocrystal structure, the semiconductor material grown on the substrate has fewer defects, and the material stress is reduced.