528results about How to "Good ohmic contact" patented technology

A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second metal is Ti, Ta or W. The device provides excellent ohmic contact and high quality surface metallization construction.

The invention provides a composite electric-conducting material, in particular a graphene / copper nanowire composite electric-conducting material which comprises graphene, copper nanowires and a bonding agent, wherein the weight of the copper nanowires accounts for 1-99% of the weight of the graphene, and the weight of the bonding agent accounts for 1-50% of the total weight of the graphene / copper nanowires; the graphene is divided into 1-20 layers and has the area of 1-2500 mum<2>; and the length / diameter ratio of the copper nanowires is 10-10000. The invention further provides a preparation method of the composite electric-conducting material and a back electrode containing the composite electric-conducting material. The composite electric-conducting material provided by the invention has the advantages of low cost and excellent electric performance and can be produced in a large scale.

A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a semiconductor layer formed on an emission layer, a first electrode layer formed on the semiconductor layer and a second electrode layer, formed on the first electrode layer, having a periodic structure. The first electrode layer is superior to the second electrode layer in ohmic contact with respect to the semiconductor layer, and the second electrode layer contains a metal exhibiting a higher plasma frequency than the first electrode layer.

A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.

Disclosed are methods of growing III-V epitaxial layers on a substrate, a semiconductor structure comprising a substrate, a device comprising such a semiconductor structure, and an electronic circuit. Group III-nitride devices, such as, for example, high-electron-mobility transistors, may include a two-dimensional electron gas (2DEG) between two active layers. For example, the 2DEG may be between a GaN layer and a AlGaN layer. These transistors may work in depletion-mode operation, which means the channel has to be depleted to turn the transistor off. For certain applications, such as, for example, power switching or integrated logic, negative polarity gate supply is undesired. Transistors may then work in enhancement mode (E-mode).

An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.

The invention discloses crystalline silicon solar cell front electrode electrocondution slurry and a preparation method of the crystalline silicon solar cell front electrode electrocondution slurry. The crystalline silicon solar cell front electrode electrocondution slurry is composed of a corrosion etching agent, metal powder, an organic carrier and glass powder; the corrosion etching agent is a compound of one or more crystals, and the melting temperature of the corrosion etching agent ranges from 250 DEG C to 760 DEG C; the glass powder is of a non-crystal structure. In the sintering process of the electrode electrocondution slurry, the corrosion etching agent directly turns into a liquid from a solid so that the corrosion etching agent can flow easily; in coordination with the softened glass powder, the corrosion etching agent can easily etch and penetrate through an antireflection insulating layer on the front of a crystalline silicon solar cell so that the conductive metal powder and the crystalline silicon solar cell can form good ohmic contact; moreover, the conductive metal powder can be wetted, contact between the metal powder can be enhanced, and therefore a crystalline silicon solar cell front electrode with excellent conductivity is formed.

The invention discloses positive electrode silver paste for a back passivation silicon solar cell and a preparation method thereof. The positive electrode silver paste comprises, in mass percent, 3%-15% of organic carriers, 80%-95% of silver powders and 1%-5% of inorganic glass materials. The inorganic glass materials are prepared by compounding Pb-V-Te glass and Bi-W-Si glass; and the silver powders are prepared by compounding first silver powders and second silver powders. Through introduction of nanometer silver powders, sintering activity of a silver powder system is improved, and compactness of silver grid lines under low-temperature sintering is improved; by adjusting softening temperature, viscosity and surface tension of the glass materials, liquidity and wetting ability of glass liquid are improved, etching capacity of the glass liquid to a front-surface antireflection layer is ensured and silver powder fusion and reprecipitation capability is improved; precipitation of silver nanometer colloid particles on the surface of a silicon wafer helps to promote the glass layer to form good ohmic contact with the silicon wafer, and thus conversion efficiency is improved; and through introduction of the second component glass powders, bonding strength between the glass layer and a silicon substrate is enhanced.

The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an etchant gas into the reaction chamber at a first temperature which gas aids in cleaning the surface of the substrate material, contacting the nucleating particles with at least a first precursor gas to initiate nanowire growth, and heating the alloy droplet to a second temperature, whereby nanowires are grown at the site of the nucleating particles. The etchant gas may also be introduced into the reaction chamber during growth of the wires to provide nanowires with low taper.