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Graphene/copper nanowire composite electric-conducting material and preparation method thereof

A copper nanowire and composite conductive technology, which is applied in the direction of cable/conductor manufacturing, metal/alloy conductor, carbon-silicon compound conductor, etc., can solve the problems of application limitation, complicated preparation process, and high manufacturing cost

Active Publication Date: 2011-09-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although low-dimensional materials such as silver nanowires and carbon nanotubes are widely used in conductive composites and have good electrical conductivity, their high manufacturing costs and complex preparation processes limit their applications.

Method used

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  • Graphene/copper nanowire composite electric-conducting material and preparation method thereof
  • Graphene/copper nanowire composite electric-conducting material and preparation method thereof
  • Graphene/copper nanowire composite electric-conducting material and preparation method thereof

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preparation example Construction

[0074] The specific preparation steps of the composite conductive material and preparation method of a kind of graphene / copper nanowire of the present invention are as follows:

[0075] (1) Use copper, cobalt, nickel, ruthenium metals with high specific surface area (such as metal foam copper, foam cobalt, nickel foam) and inert support copper, cobalt, nickel and ZnS fine particles as catalysts, put them into chemical vapor deposition The reaction chamber is sealed, checked for air tightness, exhausted under a protective atmosphere, and then heated to a reaction temperature of 600-1000°C. After a constant temperature of 0-60min, carbon source, hydrogen and protective gas are introduced, and the gas flow rate is 1-1000sccm. The reaction time is 1-60min. After the reaction is completed, the cooling rate is controlled to be 10-300°C / min, and cooled to room temperature. Put the prepared product into the etching solution, heat and stir to remove the catalyst and support, then vacuu...

Embodiment 1

[0129] (1) Weigh 1.5g MgO and 0.3g cupric chloride into a beaker filled with 20ml ethanol, stir vigorously for 4 hours, dry in vacuum, reduce in a hydrogen-argon mixed atmosphere at 500°C for 6 hours, take it out after natural cooling, and put it into a CVD reaction furnace 100 sccm hydrogen gas and 100 sccm argon gas were introduced, and after 60 minutes, heating was started to 1000°C. After 30 minutes of constant temperature, 30 sccm methane was introduced, and the reaction time was 30 minutes.

[0130] (2) Put the product prepared in step (1) into 100ml 1M hydrochloric acid and 1M FeCl 3 Stir in the solution for 4h to remove MgO and metal copper particles, then vacuum filter and wash to neutrality with deionized water, the product scanning electron micrograph and Raman spectrum are as follows: figure 1 and 2 As shown, it is indicated that graphene is 1-10 atomic layers.

[0131] (3) Weigh 1mmol of copper sulfate and 2mmol of octadecylamine into 100ml of deionized water, s...

Embodiment 2

[0134] The preparation method is basically the same as Example 1, and the difference is: in the step (1), adopting the nickel foam through ethanol, acetone and isopropanol ultrasonic cleaning is a catalyst, by 5sccm ethylene, 100sccm nitrogen, and the reaction times 10min; step (2 ), using concentrated hydrochloric acid to remove foamed nickel; in step (3), using 2mmol copper chloride and 2mmol tetradecylamine as reactants, the reaction temperature is 180°C, the average diameter of the prepared copper nanowires is 40nm, and the length is tens of microns In step (4), take by weighing 0.1g graphene and 5mg copper nano wire, be dispersed in the NMP solution of PVDF, handle 80min at 350 ℃ under 5% hydrogen-argon mixed atmosphere, the volume resistivity of the composite conductive material that obtains 9.15×10 -4 Ω cm, the cell efficiency is 11.7%.

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Abstract

The invention provides a composite electric-conducting material, in particular a graphene / copper nanowire composite electric-conducting material which comprises graphene, copper nanowires and a bonding agent, wherein the weight of the copper nanowires accounts for 1-99% of the weight of the graphene, and the weight of the bonding agent accounts for 1-50% of the total weight of the graphene / copper nanowires; the graphene is divided into 1-20 layers and has the area of 1-2500 mum<2>; and the length / diameter ratio of the copper nanowires is 10-10000. The invention further provides a preparation method of the composite electric-conducting material and a back electrode containing the composite electric-conducting material. The composite electric-conducting material provided by the invention has the advantages of low cost and excellent electric performance and can be produced in a large scale.

Description

technical field [0001] The invention relates to a composite material, in particular to a graphene / copper nanowire composite conductive material and a preparation method, which are mainly used in the fields of solar cell electrodes and the like. Background technique [0002] Conductive composite materials are mainly composed of conductive fillers and adhesives, which are widely used in electronic packaging connections and solar cell electrodes. With the deepening of research on nanomaterials, researchers have found that low-dimensional materials are used as fillers for conductive composite materials. Excellent electrical conductivity can be obtained. At present, the fillers of conductive composite materials that have been studied more are new conductive composite materials such as one-dimensional carbon nanotubes and silver nanowires. [Details can be found in the literature: C.H.Liu, X.Yu. (Nanoscale Research Communication) Nanoscale Research Letters, 2011, 6:75. J.Y.Lee, S....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/02H01B1/04H01B13/00H01L31/0224
Inventor 黄富强毕辉梁军林天全
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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