148 results about "Micrograph" patented technology

The invention relates to a method for evaluating the porosity of mud shale at an objective layer segment, and belongs to the technical field of exploration and development of petroleum, geology and mining industry. The method can be used for evaluating the total porosity, the organic porosity and the inorganic porosity of the mud shale at the objective layer segment in a shale gas well. The method comprises the following steps: (1) determining the mass of various ingredients in a mud shale sample skeleton in unit mass at each depth point of the objective layer segment and the density of each dried sample block body and calculating the total porosity of the mud shale in all the depth points via the combination of the actual density of various minerals; (2) calculating the organic porosity (Phi organic') formed by the hydrocarbon generation of the mud shale at the objective layer segment by utilizing chemical kinetics; (3) seeking a solution of the organic porosity (Phi organic) according to scanning electron micrographs of multiple argon ion polishing samples in the same depth point; (4) calibrating the organic porosity (Phi organic') calculated according to the chemical kinetics by utilizing the organic porosity (Phi organic); and (5) seeking a solution of the inorganic porosity by utilizing a difference value of the total porosity and the calibrated organic porosity.

The invention discloses a method for automatically identifying conifer seeds based on wood micrographs, belonging to the computer identification technology of micrographs. The method is divided into as a training part and an identifying part, wherein the training part comprises the following specific steps of preparing basic sample materials, preprocessing, extracting PCA characteristics and extracting ICA characteristics; and the identifying part comprises the following specific steps of preparing materials to be identified, preprocessing, projecting and re-constructing images to be identified, and determining tree seed. By adopting the method, the data in the stored conifer cross section micrographic database can be trained, and the tree seeds are identified for the conifer to be identified by a computer similarity matching method. The method has the advantages of no influence from the subjection of an authenticator, high comprehensive capability, high operation efficiency, high speed and higher accuracy rate.

The invention provides the appraisal and selective method for the antineoplastic drug based on the cell micrograph information, which uses a sort of selection and appraisal hardware system to appraisal and select the antineoplastic drug by different fluorescence dye marking and measuring the multicellular parameter change in cell. The hardware system is made up of the high precision electric hydrous platform, the fluorescence vision system, the image collecting and processing system and working station. The diacetoxyl fluoresceine dyeing measures the active cell number; the double dyeing method of Hoechst33342 and iodized pyridine appraise the drug inducing the cell die; the three dyeing method of FDA, Hoechst33342 and PI analyzes the die mode induced by drug. The invention can measure at least two kinds of single cell or cell subgroup which expresses different drone cell organ. The method is in reason and can be used in study of drug action mechanism and selecting the high hedonic drug and toxicity analyzing, which can be used in selecting drug and appraising the drug toxicity.

A non-destructive method capable of real-time or on-line measurement of a wood or pulp fiber without sample pretreatment for the microfibril angle and the path difference. A circular polariscope in combination with a line spectral camera generating a micrograph insensitive to the orientation of a fiber and determined only by the fiber's properties related to polarized light. A line image across the fiber is captured and dispersed it into a spectral image to perform a real-time spectral analysis of the fiber's image.

The invention discloses a cervical cancer histopathology image analysis method and device based on depth learning. The method comprises the following steps: acquiring cervical cancer histopathology images and setting image labels for each image; training two convolution neural networks respectively based on the images used for training, and obtaining the two trained convolution neural networks; fixing parameters of the two trained convolutional neural networks, and training the all-connected layer one based on the images used for training, so that the trained all-connected layer one is obtained. The image to be tested is input into the trained classifier, and the two convolution neural networks extract feature vectors from the image respectively. The output feature vectors f1 and f2 are spliced together and input to the full connection layer 1, and the output feature vector f3. The classification result is determined by the element with the largest value in the feature vector f3 The invention can automatically classify and identify the differentiation degree of the original histopathological slice micrograph collected by the doctor and assist the doctor in diagnosis.

The present invention discloses a dual-channel structure optical digital phase contrast microscopy imaging system and a realization method thereof, wherein the system comprises a light source, a beam expansion collimating unit, a light splitter, a lens group and two same cameras. The beam expansion collimating unit is used to adjust the divergent light emitted out by the light source into the parallel light and irradiate to a to-be-detected object, the light splitter, the lens group and the two cameras form two sets of symmetrical 4f imaging systems and obtain two synchronization images to calculate a real-time bright field micrograph, a differential phase contrast graph and a quantitative phase diagram image. Based on utilizing the common and cheap devices in the market specifically, and by processing simply, a same phase contrast imaging effect can be realized, and the problems that the devices are expensive, and a spatial light modulator is sensitive to the polarization of the light, are solved.

The invention discloses a large-area high-resolution wide-field online measurement device and a measurement method for nanostructure films. Light emitted by a light source is converted into a single-wavelength light beam through a wavelength selector, and the single-wavelength light beam is converted into an elliptic polarized beam which is then projected to a to-be-measured nanostructure film. A film reflection beam passes through an imaging unit and a polarization state analysis unit to enter an area array detector to obtain imaging spectrum ellipsometry measurement data of the to-be-measured nanostructure film. The data are matched with theoretical values and extracted to obtain parameter values of the to-be-measured nanostructure film at corresponding pixels, and the extracted parameter values form three-dimensional micrograph morphology of the to-be-measured nanostructure film. The problem that an existing device is small in focal depth value of an instrument and difficult to realize wide-field clear imaging and high-transverse-resolution measurement at the same time is solved, and large-area high-resolution accurate measurement of the nanostructure film is truly realized.

Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size d_ave of the sputtering face of the Ag-based sputtering target is measured in accordance with the procedures 1-3 described below, the average grain size d_ave satisfies 10 μm or less.

(Procedure 1) In the surface of the sputtering face, a plurality of locations are optionally selected, and a micrograph (magnification: 40-2,000 times) of each selected location is taken.

(Procedure 2) Four or more straight lines are drawn in a grid pattern or radially on each micrograph, a number n of grain boundaries existing on the straight line is investigated, and a grain size d is calculated on the basis of the following equation on each straight line.

(Procedure 3) The average value of the grain sizes d of all selected locations is made the average grain size d_ave of the sputtering face.

The invention relates to a rapid cross section manufacture and sub-surface micro-crack detection method of a single crystal semiconductor substrate. The method comprises the steps of cleaning the single crystal semiconductor substrate; processing one micro-groove or more micro-grooves on the single crystal semiconductor substrate along the direction of the same straight line of the surface to be detected; applying pressure onto the crack of the back(s) of the more micro-groove(s) of the single crystal semiconductor substrate, and enabling the single crystal semiconductor substrate to be broken into two along the direction(s) of the micro-groove(s) under the action of the force to complete sample preparation of the cross section of the single crystal semiconductor substrate; horizontally putting the detected cross section of the broken single crystal semiconductor substrate under an optical microscope and observing; moving the single crystal semiconductor substrate to enable the boundary between the surface to be detected and the detected cross section to appear in a visual area; adjusting the multiplying power of a lens of the optical microscope, and shooting the optical micrograph of a target area on the cross section; and measuring the maximum distance between the crack on the detected cross section and the boundary between the surface to be detected and the detected cross section to complete the sub-surface micro-crack detection work of the single crystal semiconductor substrate. The rapid cross section manufacture and sub-surface micro-crack detection method is feasible and dependable in detection result.

The method is for the identification and characterization of structures in electron micrographs. Structures in a first image are selected. The structures have a first shape type deformed in a first direction. The selected structures are transformed to a second shape type different from the first shape type. The transformed structures of the second shape type are used to form a plurality of templates. A new structure in a second image is identified. The new structure has the first shape type. The second shape type structure of each template is deformed in the first direction. It is determined which template is a preferred template that best matches the new structure.

The invention provides a lithium ion battery positive electrode material with a stable high temperature performance. The material at least contains three metallic elements: nickel, cobalt and manganese. The median diameter of the material is measured to be greater than 2 micrometers by a laser particle size method, and through analysis of a scanning electron micrograph, the particle appearance of the material is in the form of single crystal particles rather than secondary balls aggregated by small particles. And the positive electrode material has a specific surface area less than 0.7sqm/g. The invention also provides a lithium ion battery using the material provided in the invention. The lithium ion battery of the invention has the characteristics of high volumetric specific energy and good high temperature performance.

Anti-reflection glass, of a smooth and smooth tact, with an aspect that does not reflect light and pleasant at sight and glass products made therefrom are disclosed and described. Such products may in some aspects have characteristics defined by values of transmittance, absorbance, reflectance, roughness and a series of micrographs realized with a microscope of atomic force to see the morphology and structure of the anti-reflection glass.

The invention relates to a material for producing a slab of semiconductor chip, a preparation method and an application thereof. The material for producing the slab of semiconductor chip disclosed in the invention has s sandwich structure, wherein, a middle layer of the sandwich structure is composed of a semiconductor chip to be examined, layers at two sides of the sandwich structure are composed of Si substrate wafers, a binder used for binding inorganic nonmetallic materials is adopted to bind the middle layer and the layers at two sides of the sandwich structure. The invention further provides the preparation method for preparing the material for producing a slab of semiconductor chip, and the application of the material for producing a slab of semiconductor chip in producing the slab of semiconductor chip. The material for producing the slab of semiconductor chip prepared by the method disclosed in the invention has good observation effect of electron micrographs, and can be prepared without mold or resins. Because section area of grinding and polishing is small, the consumption of materials in grinding and polishing is reduced, the production time of a sample is short, the production cost of the sample is low, and wastes in the preparing process can be minimized.

Anisotropic contrast methodology in combination with use of sample investigating polarized electromagnetic radiation to provide Jones or Mueller Matrix imaging data corresponding to areas on samples.