236 results about "Elliptically polarized light" patented technology

An interferometer and ellipsometer are combined in a metrology tool to measure the step height of a sample, which may include transparent layers. The metrology tool includes a shared light source that provides a light beam for an interferometer and a light beam for an ellipsometer, interferometer optics which direct the light beam for an interferometer to reflect off of a sample and ellipsometer optics which direct the light beam for an ellipsometer to reflect off a sample, and a detector element for receiving both the reflected light beam for an interferometer and the light beam for an ellipsometer. The light source may produce a single beam that is split into an interferometer and an ellipsometer beam with a beam splitter. In another embodiment, the interferometer and ellipsometer may share at least one of a polarizer, analyzer, or detector element.

PCT No. PCT / JP98 / 02567 Sec. 371 Date Jan. 13, 1999 Sec. 102(e) Date Jan. 13, 1999 PCT Filed Jun. 10, 1998 PCT Pub. No. WO98 / 57146 PCT Pub. Date Dec. 17, 1998Measurement light, which has been emitted from a Xe light source (20) and then linearly polarized by a polarizer (21), is made to be incident at a tilt angle on a region in a silicon substrate (11) with crystallinity disordered by the implantation of dopant ions. And the spectra of cos DELTA and tan psi are measured with a variation of the measurement light, where DELTA is a phase difference between respective components in p and s directions as to the light reflected as an elliptically-polarized ray, and psi is a ratio between the amplitudes of these components. By correlating in advance the spectral patterns of cos DELTA and so on with the thickness of an amorphous region through a destructive test or the like, or by paying special attention to characteristic parts of the patterns of cos DELTA and so on, the thickness or the degree of disordered crystallinity of the amorphous region is estimated. Also, since a variation in the thickness of the amorphous region can be identified based on a variation of cos DELTA before and after a heat treatment, a temperature of the heat treatment can be sensed based on the variation of the thickness. Thus, an evaluation method allowing for nondestructive estimation of the thickness and the degree of disorder of a region, having crystallinity disordered by implanting dopant ions into a semiconductor region at a high level, can be provided.

Red incident light is reflected on a mirror (19) and linearly polarized by a polarizer (26R). Linearly polarized incident light enters a transmissive liquid crystal device (11R), in which oblique incident light is changed into elliptically polarized light. A retardation compensator (27R) between the liquid crystal device (11R) and an analyzer (28R) has an inorganic form birefringence layer. The retardation compensator (27R) yields birefringence effect to change elliptical polarized light into linearly polarized light. Linearly polarized light from the retardation compensator (27R) can pass the analyzer (28R) without decreasing intensity, and enters a color recombining prism (24). The liquid crystal device (11R) may have the inorganic form birefringence layer. Retardation in green and blue light is also compensated in the same manner. Red, green and blue image light, mixed in the color recombining prism (24), is projected onto a screen 3 by a projection lens system (25).

A projector includes a solid-state light source that emits linearly polarized light, a birefringence element that converts the linearly polarized light emitted from the solid-state light source into circularly or elliptically polarized light, a diffusion element that diffuses the light having exited from the birefringence element, and a polarization conversion element that separates the diffused light having exited from the diffusion element into first polarized light polarized in a first polarization direction and second polarized light polarized in a second polarization direction, converts the polarization direction of the first polarized light into the second polarization direction, and outputs the resultant first and second polarized light.

The invention discloses a method and a device thereof for measuring three-dimensional topography of a nano structure, which can simultaneously measure three-dimensional topography parameters such as line width, depth, side corner, line edge roughness, line width roughness and the like of the nano structure. The method comprises the following steps of: performing splitting, polarization and front and back phase compensation on light beams with wavelengths in ultraviolet to near-infrared wave band to obtain elliptical polarized light and projecting the elliptical polarized light for later measurement; acquiring surface reflected zero-level diffraction signals of the to-be-measured structure, and obtaining a measurement Mueller matrix of the nano structure by calculation; and matching the measurement Mueller matrix and a theoretical Mueller matrix, and obtaining a three-dimensional topography parameter value of the to-be-measured nano-scale structure. The device provided by the invention for measuring the three-dimensional topography parameter of the nano structure can provide a non-contact, nondestructive, low-cost and quick measurement means for one-dimensional and two-dimensional sub-wavelength periodic structures in processes of photo-etching, nano impressing and the like of an image transfer-based batch manufacturing method.

An optical displacement meter includes: a broadband light source; a spatial filter configured to extract light under measurement of a wavelength focused on a measurement target and specify the wavelength of the light under measurement; a polarizer configured to divide the light collimated and caused to propagate in one direction into linearly polarized beams of two directions orthogonal to a propagating direction; a wavelength plate that allows passage of the linearly polarized beams to produce elliptically polarized light having a phase difference commensurate with a light wavelength; a polarized light separation element configured to divide the elliptically polarized light into polarized light components with respect to the two directions; a light receiving element configured to detect quantities of the respective polarized light components; and a computing circuit configured to perform computation of (A−B) / (A+B) by use of light quantity signals A and B detected by the light receiving element.

The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer 3 is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer 3 are determined (S3). To measure the thickness of SOI layer 3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2 is formed by using patterned nitride film 22 as an etching mask (S4).

The invention discloses a device for achieving a minitype CPT atomic clock physical system. The device comprises a Bias-Tee, a VCSEL, a first quarter wave plate, an atomic gas chamber, a second quarter wave plate, a polarization beam splitter, a first photoelectric detector and a second photoelectric detector. The invention further discloses a method for achieving the minitype CPT atomic clock physical system. Elliptically-polarized light is adopted for resonance with atom CPT, and difference detection is conducted on the optical rotation effect generated by the resonance. According to the device and method for achieving the minitype CPT atomic clock physical system, background noise generated by optical frequency components which do not interact with atoms in multi-color light output by the VCSEL and conversion noise generated by light interacting with the atoms due to light frequency jitter which is converted into signal amplitude jitter through action with the atoms are eliminated, and the signal to noise ratio of CPT resonance signals is greatly increased; in addition, the device and the method further have the advantages that the influence on the obtained CPT resonance signals by environment magnetic field intensity fluctuation is small, and laser frequency stabilization can be easily achieved through an achieved atomic clock.

An optical component capable of changing polarization light state and a liquid crystal display (LCD) device using the same are provided. The optical component including a transparent substrate and a wavelength compensator is disposed at any position from the outer side of the LCD device to the outside in an output direction of an output light. The wavelength compensator is directly attached to the surface of the substrate to convert an output light of the LCD device from a linearly polarized light into a circularly polarized light or an elliptically polarized light, thereby effectively reducing eye fatigue. The LCD device is provided with such an optical component such that a linearly polarized light emerging from the LCD device is converted into a circularly polarized light or an elliptically polarized light to lessen the eye fatigue.

The invention relates to a system for measuring elliptical polarised light quickly, which uses the combined analyzer and bidimensional CCD array detector to get the optical parameter of the material quickly, different from the traditional measuring system which uses mechanical rotation to control the analyzer or polarizer and scan the azimuth angle. So in the measuring process, the system cannot rotate any mechanical segment and increase the speed of measuring the optical parameter of every material violently.

A coaxial combination method for coherent light beams is characterized by including the following steps: 1. a polarized light p and a polarized light s are coaxially combined into an elliptically polarized light through a polarization beam combining mirror; 2. and then the elliptically polarized light is changed into a polarized light s or p through a 1 / 4 wave plate and a 1 / 2 wave plate; and 3. the combined polarized light s or p continues to be combined with other polarized light p or s as the steps 1 and 2, thus achieving the purpose of the coaxial coherent combination of a plurality of laser beams by the adoption of a multi-level combination mode. The invention realizing the combination of a plurality of coherent laser beams is characterized by simple principle, easy realization, high combination efficiency, good beam quality, strong commonality, and the like.

The invention discloses a method and device for rapidly measuring sidewall appearance of a micro-nano deep groove structure, which can simultaneously and rapidly measure the parameters of the sidewall appearance of the micro-nano deep groove structure, such as line width, groove depth, sidewall angle, sidewall roughness and the like. The method comprises the steps of: projecting elliptical polarized lights, which is obtained by polarizing light beams with the wavelengths ranging from near infrared waveband to middle infrared waveband, onto the surface of a structure to be measured; collecting zero-level diffraction signals on the surface of the structure to be measured, and calculating to obtain a measured infrared spectroscopic ellipsometry of the micro-nano deep groove structure; calculating theoretical spectroscopic ellipsometries in the near infrared waveband and the middle infrared waveband respectively by using a wavelength allocation modeling method, matching the theoretical spectroscopic ellipsometries with the infrared spectroscopic ellipsometry measured in the experiment by using a stepwise spectral inversion method, and sequentially extracting the groove structure parameter and the roughness parameter. The device comprises an infrared light source, first, second, third and fourth off-axis parabolic mirrors, a Michelson's interferometer, a planar reflector, a polarizer, a sample bench, an analyzer, a detector and a computer; and the method is a noncontact, nondestructive low-cost method for rapidly measuring the sidewall appearance.

The invention provides a liquid crystal device which is provided with a light-transmitted part inside any area from the external side of a liquid crystal box to the external space, thus realizing that the linear polarized light emitted out of the liquid crystal box is changed into round polarized light or elliptic polarized light through the light-transmitted part before entering the external space and is then emitted out, thereby being beneficial to reducing the visible fatigue of the viewers.

An optical displacement meter includes: a spatial filter configured to extract light under measurement of a wavelength focused on a measurement target and to specify the wavelength of the light under measurement; a polarizer configured to divide the light collimated and caused to propagate in one direction into linearly polarized beams in two directions orthogonal to a propagating direction; a wavelength plate that allows passage of the linearly polarized beams to produce elliptically polarized light having a phase difference commensurate with a light wavelength; a polarized light separator configured to divide the elliptically polarized light into polarized light components in the two directions; and a computing circuit configured to perform computation of (A−B) / (A+B) by use of light quantity signals A and B, which respectively correspond to the two polarized light components.

The invention belongs to the technical field of surface charge accumulation characteristic testing of high-voltage direct current solid insulating material, and in particular relates to a measuring device of direct-current GIL basin-type insulator surface charge based on Pockels effect. The measuring device comprises a helium-neon laser, a polarized light separator, a high-speed camera, a 1 / 8 valve plate, bismuth silicate crystal, an insulating vacuum tube, a sliding block, a rotating shaft and an insulating guide rod. When measuring is conducted, a bismuth silicate probe is stuck to the surface of an basin-type insulator, a red laser is emitted from the helium-neon laser, the red laser is turned into elliptically polarized light through the polarized light separator and the 1 / 8 valve plate, the light entries into the bismuth silicate probe and is reflected at a division surface of bismuth silicate and the basin-type insulator, the light penetrates the 1 / 8 valve plate again and enters the high-speed camera after right-angle refraction is conducted on the light, optical intensity distribution is measured, and the size of the quantity of electric charge is acquired after being processed by a computer. The measuring device has the advantages that the structure is simple, the operation is convenient, and efficient measuring means is provided for studying of direct-current GIL basin-type insulator surface charge accumulation.

The invention discloses a large-area high-resolution wide-field online measurement device and a measurement method for nanostructure films. Light emitted by a light source is converted into a single-wavelength light beam through a wavelength selector, and the single-wavelength light beam is converted into an elliptic polarized beam which is then projected to a to-be-measured nanostructure film. A film reflection beam passes through an imaging unit and a polarization state analysis unit to enter an area array detector to obtain imaging spectrum ellipsometry measurement data of the to-be-measured nanostructure film. The data are matched with theoretical values and extracted to obtain parameter values of the to-be-measured nanostructure film at corresponding pixels, and the extracted parameter values form three-dimensional micrograph morphology of the to-be-measured nanostructure film. The problem that an existing device is small in focal depth value of an instrument and difficult to realize wide-field clear imaging and high-transverse-resolution measurement at the same time is solved, and large-area high-resolution accurate measurement of the nanostructure film is truly realized.

A first polarization control element POL1 provided on an outer surface of an array substrate AR and a second polarization control element POL2 provided on an outer surface of a counter-substrate CT control a polarization state of light that passes therethrough, such that light in a polarization state of elliptically polarized light is to be incident on the liquid crystal layer LQ. An ellipticity of elliptically polarized light, which is incident on the liquid crystal display panel LPN in a principal viewing-angle direction is greater than an ellipticity of elliptically polarized light, which is incident in a anti-principal viewing-angle direction.

A system and method for detecting defects in semiconductor wafers in a rapid non-destructive manner. Defects in semiconductor wafers can include micropipes and screw dislocations, stress striations, planer defects, polytype inclusions, and others. When a wafer is illuminated by polarized light, the defects induce birefringence of the polarized light that can be visualized by a polariscope to detect defects in wafers. Defects can cause linearly inputted polarized light to emerge as elliptically polarized light after transmission through a wafer having defects. Placing the wafer between a set of polarizers under the cross poles condition allows for a rapid non-destructive system and method for delineating and locating defects within a semiconductor wafer.

A projector includes a solid-state light source that emits linearly polarized light, a birefringence element that converts the linearly polarized light emitted from the solid-state light source into circularly or elliptically polarized light, a diffusion element that diffuses the light having exited from the birefringence element, and a polarization conversion element that separates the diffused light having exited from the diffusion element into first polarized light polarized in a first polarization direction and second polarized light polarized in a second polarization direction, converts the polarization direction of the first polarized light into the second polarization direction, and outputs the resultant first and second polarized light.

A capacitor type touch control panel sequentially comprises a first transparent insulating layer which comprises an X axial core mark, a second transparent insulating layer, a second transparent conductive material layer which comprises a Y axial core mark, and a third transparent insulating layer. The X axial core mark is provided with a first core mark contact. The Y axial core mark is provided with a second core mark contact. The invention is characterized in that a first transparent oriented layer is provided between the second transparent insulating layer and the first transparent conductive material layer comprising the X axial core mark. A second transparent oriented layer is provided between the second transparent insulating layer and the second transparent conductive material layer comprising the Y axial core mark. The second transparent insulating layer is composed of liquid crystal. The invention also provides a method for preparing the capacitor type touch control panel. The invention can realize a two-dimensional locating function, and furthermore the second transparent insulating layer is equivalent to a wave plate. The linearly-polarized light which emits to the touch control panel can be leaded to become right circular polarized light or ellipse polarized light. The phenomenon of blind zone existing in some specific application occasions can be overcome.

The present invention discloses a inspection method and apparatus, photolithography apparatus, photolithography unit and device manufacturing method. Particularly the present invention refers to the simultaneous measurement of four separately polarized beams upon diffraction from a substrate in order to determine properties of the substrate. Circularly or elliptically polarized light sources are passed via up to three polarizing elements. This polarizes the light sources by 0, 45, 90 and 135 DEG . The plurality of polarizing beam splitters replaces the use of a phase modulator, but enables the measurement of the intensity of all four beams and thus the measurement of the phase modulation and amplitude of the combined beams to give the features of the substrate.

The invention provides a projection system with a laser speckle removal function. The system consists of a laser lighting system and two imaging systems, wherein, the laser lighting system composed of an RGB three-color laser and a uniform light tube provides a uniform lighting source for LCOS imaging; each imaging system composed of a beam-splitting prism, an LCOS chip, a drive circuit and an imaging lens forms an LCOS image on a random phase plate with high transmittance; when the random phase plate rotates in a high speed, the LCOS image thereon is formed on a screen through a projection lens, and outgoing beams of the random phase plate can be changed from linearly polarized light into elliptically polarized light due to different random phases thereof by adopting the random phase plate with a certain double refraction property; and by means of a time average principle and polarized light speckle characteristics, laser speckles can be greatly reduced to provide good image quality.

The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer 3 is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer 3 are determined (S3). To measure the thickness of SOI layer 3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2 is formed by using patterned nitride film 22 as an etching mask (S4).

The invention provides an optical composite film which is used for liquid crystal display devices and arranged at one side of outlet light of a liquid crystal layer; the optical composite film, in the light outlet direction of the liquid crystal display, sequentially comprises a first polarization layer and a phase compensation layer and can realize the functions of light polarization and phase compensation at the same time, thus changing the outlet light of the liquid crystal display device into the round polarized light or elliptic polarized light, thereby being beneficial to the visible fatigue of the viewers.

Disclosed herein is an anti-reflective film including: a hard coating layer; and a low-refractive layer containing a binder resin, and hollow inorganic nanoparticles and solid inorganic nanoparticles which are dispersed in the binder resin, wherein the low-refractive layer includes a first layer containing at least 70 vol % of the entire solid inorganic nanoparticles and a second layer containing at least 70 vol % of the entire hollow inorganic nanoparticles, and at the time of fitting polarization ellipticity measured by ellipsometry for the first layer or / and the second layer included in the low-refractive layer using a Cauchy model represented by the following General Equation 1, the second layer satisfies a predetermined condition.

The invention provides a transflective liquid crystal display device which provides both high-contrast, bright reflective and transmissive displays. The liquid crystal display device of the present invention can include a liquid crystal panel and a backlight. The liquid crystal panel includes a liquid crystal layer, which is disposed between an upper substrate and a lower substrate and whose liquid crystals are disposed in a twisted manner at an angle in the range of from 220 to 270 degrees, an upper retardation film and a lower retardation film, which are disposed above and below the liquid crystal layer so as to sandwich it; an upper polarizer 16 and a lower polarizer, which are disposed on the outer surfaces of their respective retardation films, and a sloping reflective layer. Light impinging upon the upper polarizer from the liquid crystal layer is elliptically polarized light. The product of an optical anisotropy Δn of the liquid crystal layer and thickness d of the liquid crystal layer, Δnd, lies in the range of from 820 nm to 950 nm. Light obliquely impinging upon the liquid crystal panel exits in a direction that is closer to a direction perpendicular to the liquid crystal panel than to a specular reflection direction.

A system is configured to measure two separately polarized beams upon diffraction from a substrate in order to determine properties of the substrate (30), in particular to measure parameters of a lithographic pattern on the substrate. Elliptically polarized light from a light source is reflected from the surface of the subtrate and passed via a fixed phase retarder (100) in order to change the phase of one of two orthogonally polarized radiation beams with respect to the other of the two beams. The relative phases of the two radiation beams and other features of the beams as measured in a detector allows to determine properties of the substrate surface.

The invention relates to the display technical field, in particular to a display panel and a transparent display device. According to the transparent display device, a polarization light source supplies elliptically polarized light or circularly polarized light to the display panel, a liquid crystal layer equivalently forms a quarter of a liquid crystal wave plate, then after passing through the quarter of the liquid crystal wave plate equivalently formed by the liquid crystal layer, the elliptically polarized light or the circularly polarized light can form linearly polarized light, therefore, an upper polarizer on a color film substrate can not be transmitted, when the liquid crystal layer is powered up, the elliptically polarized light or the circularly polarized light can partially transmit the upper polarizer on the color film substrate, and then the image display effect is achieved; natural light can transmit the upper polarizer on the color film substrate and then transmit the display panel, and then the transparent effect is achieved; according to the transparent display device, due to the fact that the polarizer does not need to be arranged on an array substrate, the transmittance of the display panel is improved, the transparent effect of the transparent display device is greatly improved, and therefore the effect for improving user experience is improved.