3561 results about "Scanning electron microscope" patented technology

The invention relates to an apparatus and a method for a scanning probe microscope, comprising a measuring assembly which includes a lateral shifting unit to displace a probe in a plane, a vertical shifting unit to displace the probe in a direction perpendicular to the plane, and a specimen support to receive a specimen. A condenser light path is formed through the measuring assembly so that the specimen support is located in the area of an end of the condenser light path.

The magnetic tape includes a magnetic layer containing ferromagnetic hexagonal ferrite powder, abrasive, and binder on a nonmagnetic support, wherein the ferromagnetic hexagonal ferrite powder exhibits an activation volume of less than or equal to 1,800 nm³, and inclination, cos θ, of the ferromagnetic hexagonal ferrite powder relative to a surface of the magnetic layer as determined by sectional observation by a scanning electron transmission microscope is greater than or equal to 0.85 but less than or equal to 1.00.

Provided is a magnetic tape in which the total thickness of the non-magnetic layer and the magnetic layer is equal to or smaller than 0.60 μm, the magnetic layer includes ferromagnetic hexagonal ferrite powder and an abrasive, a percentage of a plan view maximum area of the abrasive confirmed in a region having a size of 4.3 μm×6.3 μm of the surface of the magnetic layer by plane observation using a scanning electron microscope, with respect to the total area of the region is equal to or greater than 0.02% and less than 0.06%, and a tilt cos 0 of the ferromagnetic hexagonal ferrite powder with respect to a surface of the magnetic layer acquired by cross section observation performed by using a scanning transmission electron microscope is 0.85 to 1.00.

A bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.

A cellulose dispersion which is a dispersion comprising a dispersing medium and a cellulose having a fraction of cellulose I type crystal component of not more than 0.1 and a fraction of cellulose II type crystal component of not more than 0.4 and in which the average particle diameter of the constitutive cellulose is not more than 5 mum. A cellulose particulate and a cellulose composite particulate which have an average particle diameter of 0.2 to 20 mum, a ratio of long diameter (L) to short diameter (D) observed through a scanning electron microscope (L/D) of not more than 1.2 and a coefficient of aggregation of 1.0 to 3.0. The present invention provides a cellulose dispersion which has an excellent effect such as dispersion stability or the like and is high in transparency. Moreover, it provides a cellulose particulate and a cellulose composite particulate which have such performances as no rough feel, excellent rolling properties, high dispersibility and the like.

Ion source and method of making and sharpening. The ion source is a single crystal metal conductor having a substantially conical tip portion with substantial rotational symmetry. The tip portion terminates with a tip radius of curvature in the range of 50-100 nanometers. The ion source is made by electrochemical etching so that a conical tip of a selected geometry is formed. The ion source is then sharpened to provide a source of ions from a volume near the size of a single atom. Further, this ion source makes possible a stable and practical light ion microscope which will have higher resolution than existing scanning electron microscopes and scanning metal-ion microscopes.

A method of visualizing a sample in a wet environment including introducing a sample into a specimen enclosure in a wet environment and scanning the sample in the specimen enclosure in a scanning electron microscope, thereby visualizing the sample.

In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.

An enhanced resolution scanned image of an object is produced by a scanning laser microscope which includes an illumination arm for scanning an object with a focused probe beam and a detection arm for receiving light from the object. The detection arm includes a detector which collects and detects light from the object to produce pixel data for a plurality of pixels. In addition, the detection arm includes a wavefront sensor for sensing phase variations of the light from the object to produce wavefront data for scanned pixel locations. From the wavefront shape of the collected light at each pixel location, a high frequency spectrum is determined which corresponds to uncollected scattered light from small scale features of that pixel location. An enhanced resolution image of a region of interest is produced based on the high frequency spectra of the scanned pixel locations.

To obtain data pertaining to the surface characteristics of a sample, a control method adjusts a tilted rastered E-beam to in SEM to a first/next tilt condition and navigates the SEM-beam to a sample site. The system performs a fine alignment step. Then the system scans a region of a sample to acquire a waveform. The system analyzes the waveform to determine the DESL value for each edge of interest. The system tests whether there is sufficient information available for each structural edge. If NO, the system repeats the above steps starting by changing the value of the tilt angle to acquire another waveform. If YES, the system determines the height and sidewall angles for each structural edge. Then the system reports the sidewall angle and the structure height for each edge of the structure under test. The system then corrects the critical dimension measurement determined from 0 degrees tilt scanning.

An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.

An electron detector includes a plurality of assemblies, the plurality of assemblies including a first assembly having a first SiPM and a first scintillator made of a first scintillator material directly connected to an active light sensing surface of the first SiPM, and a second assembly having a second SiPM and a second scintillator made of a second scintillator material directly connected to an active light sensing surface of the second SiPM, wherein the first scintillator material and the second scintillator material are different than one another. Alternatively, an electron detector includes an assembly including an SiPM and a scintillator member having a front surface and a back surface, the scintillator member being a film of a scintillator material directly deposited on to an active light sensing surface of the SiPM.

The present invention provides an apparatus capable of, and a method for, inspecting at high speed and with high accuracy the super minute foreign particles and pattern defects occurring during device-manufacturing processes in which circuit patterns are to be formed on a sample such as a substrate of semiconductor devices and other elements: in the invention, the sample is illuminated in a dark field from multiple directions each of a different incident angle, the light scattered from the sample during the dark-field illumination is detected in each of the multiple directions, and the signals obtained by detecting the scattered light in each direction; thus, defects present on the surface of an optically transparent film of the sample, and defects present in or under the transparent film are discriminated from each other and both types of defects are discriminatively reviewed using a scanning electron microscope.

The invention relates to an Al—Ni—La system Al-based alloy sputtering target comprising Ni and La, wherein, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction, the Al—La system intermetallic compound being mainly composed of Al and La.

The present invention may include a pattern inspection method of extracting a pattern edge shape from an image obtained by a scanning microscope and inspecting the pattern. A control section and a computer of the scanning microscope process the intensity distribution of reflected electrons or secondary electrons, find the distribution of gate lengths in a single gate from data about edge positions, estimate the transistor performance by assuming a finally fabricated transistor to be a parallel connection of a plurality of transistors having various gate lengths, and determine the pattern quality and grade based on an estimated result. In this manner, it is possible to highly, accurately and quickly estimate an effect of edge roughness on the device performance and highly accurately and efficiently inspect patterns in accordance with device specifications.

To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.

Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection. To accomplish the object, the present invention includes a height measurement section which measures height of the electron beam irradiation position on the substrate after the substrate is loaded onto a movable stage, a height correction processing section which corrects the measured height, and a control section which adjusts a focus of the electron beam according to the height corrected by the height correction processing section, wherein a stage position set when the height measurement section measures the height differs from a stage position set when the substrate is irradiated with the electron beam, and the height correction processing section corrects a possible deviation in height resulting from movement from the stage position for the height measurement to the stage position for the electron beam irradiation.

A method and apparatus is provided for automatically classifying a defect on the surface of a semiconductor wafer into one of, e.g., seven core classes: a missing pattern on the surface, an extra pattern on the surface, a deformed pattern on the surface, a particle on the surface, a particle embedded in the surface, a particle and a deformed pattern on the surface, or craters and microscratches on the surface. The defect may also be further classified into a subclass of arbitrarily defined defects defined by the user or preprogrammed in the apparatus. Embodiments include using a scanning electron microscope (SEM) capable of collecting electrons emitted from a plurality of angular sectors to obtain an image of the defect and a reference image containing topographical and location information, then analyzing this information to classify the defect. As the defects are classified, counts are maintained of the number of occurrences of each type of defect, and an alarm is raised if the defect count in a particular class exceeds a predetermined level. Thus, defects are accurately and reliably classified and monitored to enable early detection and cure of processing problems.