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396 results about "Area fraction" patented technology

Al-ni-la-si system al-based alloy sputtering target and process for producing the same

ActiveUS20090026072A1Avoid it happening againSputtering defects can be effectively suppressedCellsVacuum evaporation coatingMetallurgyScanning electron microscope
The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
Owner:KOBE STEEL LTD +1

High strength cold rolled steel sheet with excellent deep drawability and material uniformity in coil and method for manufacturing the same

A high strength cold rolled steel sheet includes a chemical composition containing, by mass %, C: 0.010% or more and 0.060% or less, Si: more than 0.5% and 1.5% or less, Mn: 1.0% or more and 3.0% or less, P: 0.005% or more and 0.100% or less, S: 0.010% or less, sol.Al: 0.005% or more and 0.500% or less, N: 0.0100% or less, Nb: 0.010% or more and 0.100% or less, Ti: 0.015% or more and 0.150% or less and the balance comprising Fe and inevitable impurities. The microstructure includes, in area fraction, 70% or more of a ferrite phase and 3% or more of a martensite phase. The tensile strength is 440 MPa or more and an average r value is 1.20 or more.
Owner:JFE STEEL CORP

Particle-optical inspection device especially for semiconductor wafers

In the production of semiconductors it is necessary to inspect circuit patterns on wafers. In circuits having very small details (for example, 40 nm), inspection can be carried out by means of electron beam columns, a plurality of wafers then being inspected at the same time and the signals being compared on-line. In an inspection apparatus in accordance with the invention more beam columns 1 to 7 are provided for every wafer A, B, C in order to obtain a high feed-through rate. The inspection is carried out by way of an x-y scan and the wafers are fed through according to a rectilinear movement, thus providing the possibility of scanning only the Care Area Fraction of the wafers, resulting in a high feed-through rate for the wafers in the inspection apparatus.
Owner:KONINKLIJKE PHILIPS ELECTRONICS NV +1
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