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297 results about "Number density" patented technology

In physics, astronomy, chemistry, biology and geography, number density (symbol: n or ρN) is an intensive quantity used to describe the degree of concentration of countable objects (particles, molecules, phonons, cells, galaxies, etc.) in physical space: three-dimensional volumetric number density, two-dimensional a real number density, or one-dimensional linear number density. Population density is an example of areal number density. The term number concentration (symbol: C, to avoid confusion with amount of substance n) is sometimes used in chemistry for the same quantity, particularly when comparing with other concentrations.

Plasma processing apparatus

A plasma processing apparatus includes a vacuum chamber, a sample table that places the sample in the vacuum chamber, and a gas supply unit faced to the sample table and having a gas supply surface with a diameter larger than that of the sample, wherein gas injection holes each having identical diameter are provided concentrically on the gas supply surface, a hole number density of the gas injection holes present in an outer diameter position of the sample or in an outside of the outer diameter position is made higher than that of the gas injection holes present inside the outer diameter position of the sample, and a diameter of the gas injection holes present in the outer diameter position of the sample or in the outside from the outer diameter position is larger than that of the gas injection holes present inside the diameter of the sample.
Owner:HITACHI HIGH-TECH CORP

Identification of reservoir geometry from microseismic event clouds

A method for characterizing fracture planes generated during a hydraulic fracturing process, comprises receiving microseismic data from the hydraulic fracturing process and processing a microseismic event cloud from the received microseismic data. This is followed by determining at least one reservoir geometry from the microseismic event cloud. The determination of geometry may consist of determining multiple candidate geometries and probability of each. In some forms of the invention the method may comprise postulating a set of candidate geometries with differing numbers of fracture planes, determining the most probable locations of the postulated fracture planes in each member of the set of candidate geometries and also determining relative probabilities of the candidate geometries in the postulated set. Determining a location of a fracture plane may comprise calculating a number density for each microseismic event, dependent on distance from some possible location of a fracture plane or fracture network. Finding the location of a plane may then be finding the location for which the number density is greatest. The determination of reservoir geometry may be followed by determination of the area of the fracture planes and/or by a prediction of production.
Owner:SCHLUMBERGER TECH CORP

Methods for tailoring the surface topography of a nanocrystalline or amorphous metal or alloy and articles formed by such methods

Electrochemical etching tailors topography of a nanocrystalline or amorphous metal or alloy, which may be produced by any method including, by electrochemical deposition. Common etching methods can be used. Topography can be controlled by varying parameters that produce the item or the etching parameters or both. The nanocrystalline article has a surface comprising at least two elements, at least one of which is metal, and one of which is more electrochemically active than the others. The active element has a definite spatial distribution in the workpiece, which bears a predecessor spatial relationship to the specified topography. Etching removes a portion of the active element preferentially, to achieve the specified topography. Control is possible regarding: roughness, color, particularly along a spectrum from silver through grey to black, reflectivity and the presence, distribution and number density of pits and channels, as well as their depth, width, size. Processing parameters that have been correlated in the Ni—W system to topography features include, for both the deposition phase and the etching phase of a nanocrystalline surface: duty cycle, current density, deposition duration, plating chemistry, polarity ratio. The relative influence of the processing parameters can be noted and correlated to establish a relationship between values for processing parameters and degree of topography feature. Control can be established over the topography features. Correlation can be made for any such system that exhibits a definite spatial distribution of an active element that bears a predecessor spatial relationship to a desired topography feature.
Owner:MASSACHUSETTS INST OF TECH

Fine-particle counter

The present invention provides a fine-particle counter with which the number density of nanometer-sized fine particles born in a gas phase, which is extremely low, can be accurately measured under wide-ranging pressure conditions from pressurized conditions to low-pressure conditions.After contact-mixing, in a mixer 3, saturated vapor of a high-boiling-point solvent produced in a saturator 2, a component of a condensed nucleus detector 1, with nanometer-sized fine gas-born particles, condensed droplets of the saturated vapor whose nuclii are the fine particles are produced in a condenser 4 by heterogeneous nucleation. The number of the condensed droplets per unit of time is then counted with an optical detector 5 and is output as a pulse signal, and a computer 19 computes the number density of the nanometer-sized fine particles born in the aerosol from this pulse signal, the gas flow rates controlled by the flow meters 6, 12 and 10, and the other data that are transmitted to the computer 19 via an interface 18. The internal space of the mixer 3 has a narrowest passage having a circular cross section, situated in the center between the lower end of the mixer from which the carrier gas enters and the upper end of the mixer from which the carrier gas exits, a truncated-cone-shaped part whose cross section is circular and whose diameter gradually decreases so that the diameter on the lower end side is greater than the diameter on the narrowest passage side, and a reverse-truncated-cone-shaped part whose cross section is circular and whose diameter gradually increases so that the diameter on the narrowest passage side is smaller than the diameter on the upper end side. An aerosol inlet communicating with the aerosol inlet tube 8 is positioned at the narrowest passage.
Owner:RIKEN

Substrate with a spacer, panel, liquid crystal display panel, method of manufacturing panel and method of manufacturing liquid crystal display panel

A liquid crystal display panel includes two substrates fixed together by a seal member with their main surfaces opposed to each other, liquid crystal sealingly stored in a region surrounded by the two substrates and the seal member, and a plurality of columnar spacers arranged in a region surrounded by the two substrates and the seal member. A number density of the columnar spacers in a low-density region near the inner side of the seal member is smaller than that in a high-density region inside the low-density region. The substrate with the spacer has the substrate and the spacer formed on the substrate. The spacer has at least a first spacer portion, and a second spacer portion formed above the first spacer portion. An upper portion of the first spacer has a larger diameter than a bottom of the second spacer portion.
Owner:SHARP KK

Method of producing an aluminum alloy brazing sheet

A method of producing an aluminum alloy brazing sheet which has a clad of a sacrificial anode material / a core alloy / an intermediate material / a filler alloy, each of which has a specific composition, wherein number density ratios N 1 / N 2 and N 1 / N 3 each are 1.5 or more, in which a number density ((the number of grains) / [mu]m 3 ) of an intermetallic compound having a sphere-equivalent grain diameter of 0.1 [mu]m or less present in the core alloy, the intermediate material, and the sacrificial anode material, is represented by N 1 , N 2 , and N 3 , respectively.
Owner:FURUKAWA SKY ALUMINUM CORP

Nonoriented magnetic steel sheet, member for rotary machine and rotary machine

A nonoriented magnetic steel sheet which has a chemical composition in mass % wherein contents of Si and Mn are 0.1 to 1.2 % and 0.005 to 0.30 %, respectively, and the contents of C, Sol.Al and N are limited to 0.0050 % or less, 0.0004 % or less, and 0.0030 % or less, respectively, all including 0 %, and has a number density of grain growth inhibiting ductile non-metallic inclusions dispersed in the steel sheet of 1000 pieces / cm<2> or less including 0, wherein a grain growth inhibiting ductile non-metallic inclusion means an inclusion contained in a steel sheet having been subjected to finishing annealing which has a length of 3 x D to 9 x D, D representing an average particle diameter of re-crystallized grains in the steel sheet. The nonoriented magnetic steel sheet allows the production, from one steel sheet, of a rotor material exhibiting a high magnetic flux density and a high strength and a stator material exhibiting a high magnetic flux density and a low iron loss after it is subjected to strain removing annealing.
Owner:JFE STEEL CORP

Composite membrane for super straight solar cell, process for producing the composite membrane for super straight solar cell, composite membrane for substraight solar cell, and process for producing the composite membrane for substraight solar cell

This invention provides a composite membrane for a super straight solar cell or for a substraight solar cell. The composite membrane comprises a transparent electroconductive film and an electroconductive reflective film. The transparent elctroconductive film is formed by coating a composition or dispersion liquid, for a transparent electrocondutive film, containing fine particles of an electroconductive oxide by a wet coating method. The electroconductive reflective film is formed by coating a composition, for en electroconductive reflective film, containing metallic nanoparticles by a wet coating method. The average diameter of pores, which appear on a photoelectric converting layer-side or transparent electroconductive film-side contact face of the electroconductive reflective film, isnot more than 100 nm. The average depth at which the pores are located is not more than 100 nm. The number density of the pores is not more than 30 pores / [mu]m2.
Owner:MITSUBISHI MATERIALS CORP
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