434 results about "Electrochemical etching" patented technology

A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.

The invention provides a shell. The shell comprises a metal part and a plastic part which is combined with the surface of the metal part in an injection molding mode. A plurality of laser holes are formed in the combined surface of the metal part and the plastic part, and a plurality of nanopores formed in an electrochemical etching mode are formed in the combined surface of the metal part and the plastic part and in the laser holes. The invention further provides a manufacturing method of the shell, and the binding force between the metal part and the plastic part of the shell manufactured with the manufacturing method is strong.

The invention provides a compound of aluminum or an aluminum alloy and plastics and a manufacturing method thereof. The compound comprises an aluminum or aluminum alloy substrate and a plastic piece which is combined with the aluminum or aluminum alloy substrate through injection molding, wherein the aluminum or aluminum alloy substrate is subjected to electrochemical etching, thus the surface of the aluminum or aluminum alloy substrate is etched from the surface to the inside to form a plurality of nano holes; and the plastic piece is made of crystalline thermoplastic plastics. The manufacturing method of the compound comprises the following steps: providing the aluminum or aluminum alloy substrate; carrying out electrochemical etching treatment on the aluminum or aluminum alloy substrate, thus the surface of the aluminum or aluminum alloy substrate is etched from the surface to the inside to form the plurality of nano holes; and placing the aluminum or aluminum alloy substrate subjected to electrochemical etching into an injection molding mould, and combining the injection molding piece on the surface of the aluminum or aluminum alloy substrate, thus the compound is obtained, wherein the molding piece is made of crystalline thermoplastic plastics.

The invention provides an electrochemical levelling and polishing processing method with nanometer precision and a device thereof, relating to an electrochemical etching levelling and polishing technology. The device is provided with a cutter with nanometer levelling precision, an electrochemical reaction control system capable of accurately controlling the thickness of an etching levelling agent liquid layer in nanoscale, a solution circulating device, a solution thermostat and an automatic control system. The method is implemented by the following steps: preparing the cutter with nanometer levelling precision to serve as an electrochemical working electrode, and placing the cutter at the bottom of a container together with a workpiece; immersing the cutter in a solution, starting an electrochemical system, generating the etching levelling agent on the surface of the cutter, compressing the etching levelling agent liquid layer on the cutter surface into a nanoscale thickness, and regulating and controlling the thickness of the etching levelling agent liquid layer; driving a tri-dimensional micro-drive device, leading the cutter to approach the workpiece gradually, and regulating and controlling the distance and parallelism between the workpiece surface and the cutter; and leading the cutter to move toward the workpiece surface, and enabling the constraint etching levelling agent liquid layer on the cuter surface to contact with the workpiece surface until the whole workpiece is etched, leveled and polished.

This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.

The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.