The invention relates to an integrated
silicon chip for testing acceleration, pressure and temperature, and the manufacturing method thereof. The invention is characterized in manufacturing the
pressure sensor, temperature sensor and accelerometers of thermoelectric
pile on to one
chip by the same micro
processing technology. The acceleration is detected by adopting thermal
convection type accelerometers, using polysilicon
resistor as heater, using a thermoelectric
pile composed of two pairs of metals (such as
aluminium and
tungsten-
titanium) and P type or N type polysilicon to detect the
temperature difference in the sealed cavity caused by acceleration. The high accurate absolute
pressure sensor is manufactured by using
silicon nitride film with
low stress as the core structure layer of the
pressure sensor chip, and
forming force sensitive
resistor track by polysilicon film, forming vacuum
reference cavity by TEOS bolt in LPCVD furnace. At the same time, the temperature sensor is composed by using polysilicon
thermistor to detect temperature change. The integrated chip achieves the advantages of microminiaturization, low cost, high precision, high reliability and high stability.