17596 results about "Engineering physics" patented technology

The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.

Methods of manufacturing electrochromic windows are described. An electrochromic device is fabricated to substantially cover a glass sheet, for example float glass, and a cutting pattern is defined based on one or more low-defectivity areas in the device from which one or more electrochromic panes are cut. Laser scribes and / or bus bars may be added prior to cutting the panes or after. Edge deletion can also be performed prior to or after cutting the electrochromic panes from the glass sheet. Insulated glass units (IGUs) are fabricated from the electrochromic panes and optionally one or more of the panes of the IGU are strengthened.

Methods for forming a diffusion barrier on low aspect features of an integrated circuit include at least three operations. The first operation deposits a barrier material and simultaneously etches a portion of an underlying metal at the bottoms of recessed features of the integrated circuit. The second operation deposits barrier material to provide some minimal coverage over the bottoms of the recessed features. The third operation deposits a metal conductive layer. Controlled etching is used to selectively remove barrier material from the bottom of the recessed features, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.

Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.

In chemical vapor deposition apparatus, a water carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes insulating layers stacked in the shape of stairs, and conductive layers alternately stacked with the insulating layers, wherein the conductive layers each include a first region interposed between upper and lower insulating layers thereof, among the insulating layers, and a second region which extends from the first region and protrudes between the upper and lower insulating layers, and wherein a protruding part formed on a sidewall or an upper surface of the second region.

Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewalls of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material. The source and drain are then formed. A contact etch stop (CES) layer is formed on the source / drain regions and the spacers. The CES layer is preferably formed of SiCO based material or SiCN based material. An Inter-Level Dielectric (ILD) is then formed on the CES layer.

Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.

A mixed-signal, multilayer printed wiring board fabricated in a single lamination step is described. The PWB includes one or more radio frequency (RF) interconnects between different circuit layers on different circuit boards which make up the PWB. The PWB includes a number of unit cells with radiating elements and an RF cage disposed around each unit cell to isolate the unit cell. A plurality of flip-chip circuits are disposed on an external surface of the PWB and a heat sink can be disposed over the flip chip components.

A gate array cell adapted for standard cell design methodology or programmable gate array that incorporates a dual gate FET device to offer a range of performance options within the same unit cell area. The conductivity and drive strength of the dual gate device may be selectively tuned through independent processing of manufacturing parameters to provide an asymmetric circuit response for the device or a symmetric response as dictated by the circuit application.

In embodiments of the present invention, a method and system is provided for designing improved intelligent, LED-based lighting systems. The LED based lighting systems may include fixtures with one or more of rotatable LED light bars, integrated sensors, onboard intelligence to receive signals from the LED light bars and control the LED light bars, and a mesh network connectivity to other fixtures.

Devices are provided for the controlled exposure or release of contents stored in hermetically sealed reservoirs. The devices comprise a primary substrate having a front side and a back side, and including one or more hermetic sealing materials; a plurality of reservoirs in the primary substrate positioned between the front side and the back side; reservoir contents, which comprise chemical molecules (such as drugs) or a secondary device (such as a glucose sensor), located inside the reservoirs; a hermetic sealing substrate having a surface composed of one or more hermetic sealing materials; and a hermetic seal formed between and joining the primary substrate and the hermetic sealing substrate, wherein the hermetic seal independently seals the reservoirs.

The present invention is to provide a phase change memory device having a new structure which can be easily manufactured by mass-production with a high yield rate, therefore, reducing the cost of process and providing reliable device characteristics, and a manufacturing method thereof. The present invention provides a phase-change memory device comprising: a lower dielectric layer; a lower electrode, at least a part of the lateral surface of the lower electrode being surrounded by the lower dielectric layer; a thin dielectric layer including a pore having smaller area than the top surface of the lower electrode, aligned to the top surface of the lower electrode and extending to the top surface of the lower electrode; and a phase-change resistor filling the pore and formed on the thin dielectric layer. In the proposed structure of the present invention, the pores or local damaged spots can provide a micro path of current and localize the phase-changing volume in the phase-change resistor. Thus, the phase-change memory device can be operated with very low power.

A method and device providing a strained Si film with reduced defects is provided, where the strained Si film forms a fin vertically oriented on a surface of a non-conductive substrate. The strained Si film or fin may form a semiconductor channel having relatively small dimensions while also having few defects. The strained Si fin is formed by growing Si on the side of a relaxed SiGe block. A dielectric gate, such as, for example, an oxide, a high “k” material, or a combination of the two, may be formed on a surface of the strained Si film. Additionally, without substantially affecting the stress in the strained Si film, the relaxed SiGe block may be removed to allow a second gate oxide to be formed on the surface previously occupied by the relaxed SiGe block. Accordingly, a semiconductor device having a strained Si fin vertically oriented on a non-conductive substrate may be formed where the strained Si film is oriented such that it may form a channel of small dimensions allowing access to both sides and top in order to from single gate, double gate, or more gate MOSFETs and finFETs with a channel having a reduced number of defects and / or reduced dimensions.

Cutting elements of this invention include an ultra hard body joined with a metallic substrate. The body includes an uppermost layer comprising a plurality of bonded ultra hard crystals and interstitial regions, and that defines a body working surface. The uppermost layer includes an outer region that is relatively more thermally stable than a remaining portion of the uppermost layer. The body further includes an intermediate layer joined to the uppermost layer, comprising a plurality of bonded ultra hard crystals, and having a wear resistance less than that of the uppermost layer remaining region. The body may additionally include a lowermost PCD layer that is interposed between and attached to the intermediate layer and the substrate.

The present invention provides LTCC (low temperature co-fired ceramic) tape compositions and demonstrates the use of said LTCC tape(s) in the formation of Light-Emitting Diode (LED) chip carriers and modules for various lighting applications. The present invention also provides for the use of (LTCC) tape and LED modules in the formation of lighting devices including, but not limited to, LED devices, High Brightness (HB) LED backlights, display-related light sources, automotive lighting, decorative lighting, signage and advertisement lighting, and information display lighting.

Methods and apparatuses for improved integrated circuit (IC) packages are described herein. In an aspect, an IC device package includes an IC die having a contact pad, where the contact pad is located on a hotspot of the IC die. The hotspot is thermally coupled to a thermal interconnect member. In an aspect, the package is encapsulated in a mold compound. In a further aspect, a heat spreader is attached to the mold compound, and is thermally coupled to the thermal interconnect member. In another aspect, a thermal interconnect member thermally is coupled between the heat spreader and the substrate.

An electrical connector with electrically lossy materials bridging ground members. The lossy conductive members may be formed by filling a settable binder with conductive particles, allowing the partially conductive members to be formed through an insert molding process. Connectors assembled from wafers that contain signal conductors held within an insulative housing may incorporate lossy conductive members by having filled thermal plastic molded onto the insulatative housing. The lossy conductive members may be used in conjunction with magnetically lossy materials. The lossy conductive members reduce ground system do resonance within the connector, thereby increasing the high frequency performance of the connector.

A method for forming a via connecting a first upper level layer to a second lower level layer, both layers being surrounded with an insulating material, the method including the steps of: a) forming an opening to reach an edge of the first layer, the opening laterally continuing beyond said edge; b) forming a layer of a protection material on said edge only; c) deepening said opening by selectively etching the insulating material to reach the second lower level layer; and d) filling the opening with at least one conductive contact material.

An electronic cigarette device includes electronic cigarette and a case for accommodating electronic cigarette. The case has a first magnetic part at a position coupled to electronic cigarette, the electronic cigarette correspondingly has a second magnetic part absorbing the first magnetic part to keep the electronic cigarette and the case firmly engaged. The case has a first connector at a position coupled to electronic cigarette, the first connector comprises a first socket, a first pole in center of the first socket, and first insulating bush inserted between the first socket and first pole. The electronic cigarette includes an inhaling shell and a power shell, the power shell has a battery therein, one end of the power shell has a second connector connected with a second battery and coupled to the first connector. The electronic cigarette device is convenient for placing electronic cigarette into the case or taking it out therefrom.

The application discloses a security mark consisting of a plurality of layers, of which the cover layers are highly conductive films and the layers of the card core are films of varying transparency. One layer carries information, which can be read directly, if desired, above a security print, while the transparent conductive layer has an additional security markings, such as biometric or product identifiers marking which can be read conductively only with the aid of a special reader. All the layers consist of polymers, papers or mixtures which can be fused together to form a laminate which is fused together. The conductive layers form conductive traces which may be formed with single-walled or multi walled nano tubes or they can be formed from multiple layers or dispersions containing, carbon nano tubes, carbon nano tubes / antimony tin oxide, carbon nano tubes / platinum, or carbon nano tubes / silver, carbon, silver or carbon nano tubes / silver-cloride. An alternative layer can be formed from a separate conductive layer or suitable dispersion and the encoding accomplished by overlaying a nonconductive trace.