60results about How to "Small voltage" patented technology

In a semiconductor device having a trench type insulated gate structure, in the case where a drift layer 2 of an n- conduction type has a high carrier density, when a high voltage is applied between a drain and a source in such a manner that a channel is not formed, the electric field strength of an insulator layer 9 below the trench type insulated gate is increased, thus causing breakdown. The withstand voltage of the semiconductor device is limited by the breakdown of the insulator layer 9, and it is difficult to realize high withstand voltage.In the characteristic of the present invention, a field relaxation semiconductor region 1 of a conduction type opposite to the conduction type of the drift layer 2 is formed within the drift layer 2 below the insulator layer 9 in the trench of the trench type insulated gate semiconductor device. Also, the thickness of a bottom portion of the insulator layer 9 provided in the trench of the trench type insulated gate semiconductor device is made significantly greater than the thickness of a lateral portion thereof.

An absolute pressure sensor includes a sense die with a reference chamber on a top side thereof. The reference chamber comprises a precisely fabricated beam that limits the travel of a diaphragm. The beam can be positioned in a cap or cover member of the sense die, thereby allowing the sense die diaphragm to move freely for a particular distance. Over this distance, the sense die will have one sensitivity. When the sense die is pressurized to a certain point, the diaphragm moves until it contacts the beam member in the cap or cover. When the diaphragm hits the beam, the sensitivity of the sense die changes, thereby allowing a smaller voltage out for the greater pressure in. Such an arrangement permits the sensor to provide a function that accurately measures low pressure and measures a higher pressure without utilizing a linear scale.

It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020 cm−3 at Al mole fractions up to 65% are obtained. These levels of doping application of n-type bulk, and n / p tunnel injection to short wavelength UV emitters. Some applications include light emitting diodes having wavelengths between approximately 254 and 290 nm for use in fluorescent light bulbs, hazardous materials detection, water purification and other decontamination environments. Lasers formed using the highly doped layers are useful in high-density storage applications or telecommunications applications. In yet a further embodiment, a transistor is formed utilizing the highly doped layer as a channel.

The read speed of an on-chip nonvolatile memory enabling electric rewrite is increased. The nonvolatile memory has a hierarchal bit line structure having first bit lines specific to each of a plurality of memory arrays, a second bit line shared between the plurality of memory arrays, a first selector circuit selecting the first bit line for each of the memory arrays to connect the selected first bit line to the second bit line, and a sense amp arranged between the output of the first selector circuit and the second bit line. The hierarchal bit line structure having the divided memory arrays can reduce the input load capacity of the sense amp.

The present invention provides a movement mechanism, in which a liquid arranged between a first structural member and a second structural member, wherein the interval between the first structural member and the second structural member is adjusted by changing the shape of the liquid due to an electro-wetting effect, by applying a voltage to the liquid. Accordingly, a position movement mechanism that is easily miniaturized and that can be driven with a low voltage can be provided, and moreover, a miniature camera, for example that uses the moving mechanism also can be provided. Furthermore, the movement mechanism also can be utilized as a position movement mechanism for micro-machines.

A switching power supply with the increased efficiency at light load has a switching power circuit, a power monitoring circuit and a light load power supplying circuit. The switching power circuit converts an AC power to a stable DC power and sends the DC power to a load according to voltage variation of the load. When the power monitoring circuit detects the AC power and determines that the load is in a light state, the power monitoring circuit controls the light load power supplying circuit to output a small-power DC to the load. As the DC power provided by the light load power supplying circuit is small, the switching loss ratio is lower in its light load state. Therefore, the operating efficiency at the light load state is higher.

The present invention relates a waveform transformation method and apparatus. It uses multilevel transformation module in series, and the output voltages of power modules at all levels are superposed to get the total output voltage, whereas each power transformation module realizes AC-to-AC direct conversion. The deviation between the output′ voltage and setting reference voltage at any time point is made as small as possible by selecting different transformation modules as current working circuit and selecting output voltage waveform of the each different transformation modules. The invention includes outputting n groups of electrical insulating AC and n transfonnation modules connected with AC. The wave transformation method and device of present invention eliminates the intermediate DC stage, so that the circuit is greatly simplified, the cost is reduced obviously and improve working efficiency. It makes voltage and current harmonics to be reduced and obtains higher power factor.

This invention is related to a microfabricated microelectromechanical systems (a.k.a. MEMS) silicon thermal mass flow sensor integrated with a micromachined thermopile temperature sensor as a flow inception detection sensor. The micromachined thermopile sensor is used to detect the inception of mass flow and therefore to trigger the operation of mass flow sensor from its hibernating mode. By this method, the battery-operated flow speed measuring apparatus can save great deal of electricity and significantly extend the life span of battery. A new design of micromachined thermopile sensor with serpentine shape is used to reduce the complexity of microfabrication process and to increase the flexibility and options for material selection. In order to enhance the sensitivity of the thermopile temperature sensor, a method to maximize the quantity of the junctions is provided as well.

A fuel cell power system includes a fuel cell stack having at least two fuel cell groups in series with each other and with each fuel cell group having more than one individual fuel cell, and a power controller which receives electrical power from the fuel cell stack and distributes the electrical power to an output bus. The power controller includes a DC-DC converter, and a reduction logic circuit operative to limit current through the DC-DC converter in response to voltage across each fuel cell group so that a minimum voltage is maintained across each fuel cell group. When used in combination with a hydrogen reformer, the reduction logic circuit is also operative to limit current through the DC-DC converter in response to hydrogen pressure supplied by the reformer to the fuel cell stack so that a minimum pressure is maintained for the hydrogen supplied to the fuel cell stack.

A circuit arrangement for operating an LED and an fluorescent lamp may include a main rectifier; an auxiliary rectifier; an inverter, the output of said inverter having a terminal for connecting the fluorescent lamp; a starting device, wherein its first terminal is coupled to a control electrode of one of the switches of the inverter; a pull-down circuit; and a starting capacitor; wherein the second terminal of the starting device and the second terminal of the pull-down circuit are coupled to the first output terminal of the auxiliary rectifier; wherein the starting capacitor is coupled between the first and the second output terminal of the auxiliary rectifier; and wherein there is arranged in parallel with the starting capacitor a series circuit including a first and a second terminal for the LED and an LED switch, wherein the LED switch has a control electrode, an operating electrode and a reference electrode.

An apparatus for capacitively measuring changes has a sensor (S) with a sensor-active region. The sensor has at least one transmitting electrode, which generates an electric field, and a further electrode (13) which is capacitively coupled to the transmitting electrode (15), wherein the transmitting electrode (15) is arranged between the further electrode (13) and an element (11) which is at a reference potential. An output of a driver / evaluation unit (5.0) is coupled to the transmitting electrode (15) and an input of the driver / evaluation unit (5.0) is coupled at high impedance to the further electrode (13), an electric field forming between the further electrode (13) and a reference potential on account of the electric field, generated by the transmitting electrode (15), between the transmitting electrode (15) and the further electrode (13). A change in the capacitance between the further electrode (13) and the reference potential is thus detected using the driver / evaluation unit (5.0). This provides a capacitive sensor which can be used to reliably detect changes in the sensor environment and is insensitive to a reference potential even in the case of a coating (18) or wetting (18).

A touch display panel includes a color film (CF) substrate and a TFT substrate disposed opposite to each other, a liquid crystal layer disposed between the CF substrate and the TFT substrate. A common electrode having a comb-shaped structure and / or a pixel electrode having a comb-shaped structure are disposed on the TFT substrate close to the liquid crystal layer. The touch display panel further includes a touch layer disposed on the CF substrate close to the liquid crystal layer and having a driving line and a detecting line insulated from each other. The driving line and / or the detecting line have a comb-shaped structure that is at least partially misaligned with respect to the comb-shaped structure of the common electrode and / or the comb-shaped structure of the pixel electrode.

The present invention provides a movement mechanism, in which a liquid arranged between a first structural member and a second structural member, wherein the interval between the first structural member and the second structural member is adjusted by changing the shape of the liquid due to an electro-wetting effect, by applying a voltage to the liquid. Accordingly, a position movement mechanism that is easily miniaturized and that can be driven with a low voltage can be provided, and moreover, a miniature camera, for example that uses the moving mechanism also can be provided. Furthermore, the movement mechanism also can be utilized as a position movement mechanism for micro-machines.

MRAM has read word lines WLR and write word line WLW extending in the y direction, write / read bit line BLW / R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write / read bit line BLW / R and the ground.

An apparatus and method for ion generation are adapted such that an ionization process is controlled temporally, to first initiate, then to halt the breakdown of the gas before a destructive plasma or glow is formed. This method controls the release of energy to the gas in such a manner as to create ions but prevent the heating of the gas. The primary advantages of this ion generation mechanism are its simplicity, efficiency and its ability to create ions at ambient temperature and pressure.

Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.

It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

A fast-response direct-current current transformer based on multi-sensor fusion is provided and includes: a magnetic modulator, a current correction module, an excitation transformer, an alternating current detection and filtering circuit, a phase-sensitive demodulation and filtering system, a PI controller, and a power amplifier. The current correction module measures a primary current and obtain a feed-forward signal, outputs a false balance state configured to control a magnetic core to quickly exit or avoid entering magnetic saturation after amplifying the feed-forward signal and a PI control signal, and keeps output of the magnetic modulator stable. The magnetic modulator and Hall current sensors are fused in the disclosure, such that the possibility of failure due to a false balance problem caused by saturation of a magnetic core is reduced. After the false balance is generated the magnetic core may be controlled to quickly exit a magnetic saturation state through a feed-forward output current.

The read speed of an on-chip nonvolatile memory enabling electric rewrite is increased. The nonvolatile memory has a hierarchal bit line structure having first bit lines specific to each of a plurality of memory arrays, a second bit line shared between the plurality of memory arrays, a first selector circuit selecting the first bit line for each of the memory arrays to connect the selected first bit line to the second bit line, and a sense amp arranged between the output of the first selector circuit and the second bit line. The hierarchal bit line structure having the divided memory arrays can reduce the input load capacity of the sense amp.

A highly efficient and low-cost switching power supply device includes a high withstand voltage transistor and a low withstand voltage transistor. When current flows from a second node to a first node, the high withstand voltage transistor turns on and the low withstand voltage transistor turns off, causing current to flow through a built-in diode of the low withstand voltage transistor. Since current does not flow through the parasitic diode of the high withstand voltage transistor, the recovery current is reduced. Furthermore, since a first delay circuit including resistors and a diode is connected to the gate electrode of the high withstand voltage transistor, and a second delay circuit including resistors and a diode is connected to the gate electrode of the low withstand voltage transistor, precise adjustment of the switching speed during switching operation is possible, and losses are reduced.

Embodiments of the present disclosure provide a pixel circuit and a drive method thereof, an array substrate, and a display panel. The pixel circuit includes a drive transistor, a data write circuit, a light emission control circuit, a compensation circuit, a reset circuit, and a light emitting device. A first control electrode of the drive transistor is coupled to a first node, a second control electrode of the drive transistor is coupled to a second node, a first electrode of the drive transistor is coupled to a first voltage signal terminal, and a second electrode of the drive transistor is coupled to a third node and may provide a drive current. The light emitting device is coupled between the light emission control circuit and a second voltage signal terminal and may emit light based on the drive current.

The present invention aims to improve a low gradation expression ability by reducing the brightness of the 1st gradation level to about 1.05 cd / m2 of the intermediate brightness between the 0th gradation level and the 2nd gradation level at the time of driving a PDP. During a sustain erase period (P13) of a subfield (SF1) with the smallest brightness weight among a plurality of subfields (SF), a positive voltage (Vbk) that is smaller than a voltage (Vsus) applied during a sustain period (P23) of other SFs is applied to scan electrodes. Also, during the sustain erase period (P13) of SF1, a positive voltage (Vda) is applied to address electrodes or a positive voltage (Vda) is applied to the address electrodes during at least one period of a voltage rising period (T11) of an all-cell reset period (P11).

The invention relates to a system for charging at least one energy storing cell (5) in a controllable energy store (2) that is used to control and supply electric energy to an n-phase electric machine (1), wherein n≧1. The controllable energy store (2) has n parallel energy supply branches (3-1, 3-2, 3-3), each of which has at least two serially connected energy storing modules (4), each said energy storing module comprising at least one electric energy storing cell (5) with a corresponding controllable coupling unit (6). The energy supply branches (3-1, 3-2, 3-3) can be connected to a reference bus (T-), and each energy supply branch can be connected to a phase (U, V, W) of the electric machine (1). The coupling units (6) bridge the respective corresponding energy storing cells (5) or connect same into the respective energy supply branch (3-1, 3-2, 3-3) dependent on control signals. The aim of the invention is to allow at least one energy storing cell (5) to be charged. This is achieved in that each energy supply branch (3-1, 3-2, 3-3) can be connected to and separated from a secondary side (9-1′; 9-1″; 9-2′; 9-2″; 9-3′; 9-3″) of a charging transformer (10′; 10-1″; 10-2″; 10-3″) by a respective controllable switching element (21-1; 21-2; 21-3), an additional charging inductor (20-1; 20-2; 20-3) being arranged in each connecting line between the energy supply branches (3-1, 3-2, 3-3) and the secondary sides (9-1′; 9-1″; 9-2′; 9-2″; 9-3′; 9-3″) of the charging transformer (10′; 10-1″; 10-2″; 10-3″).

Solenoid coils not interlinked by magnet flux of a rotor, increase inductance of a control coil system for controlling generated voltage using little current flow to a switch so no increase in windings of a power coil is needed. A generator with rotor having magnets and stator outside the rotor, have winding coil of the stator connected in series to solenoid coil. A power terminal is between the power and control sides of the solenoid coil and a switch controls flow of current from the power coil to the solenoid coil. By controlling ON / OFF condition of the switch disposed on the DC terminal of a rectifier connected to the solenoid coil in series, the generated voltage is controlled to a voltage set in advance, in response to a detection signal from a sensor detecting the voltage.