421results about How to "Reduce withstand voltage" patented technology

An LED driving circuit is used for dimming by switching between an operating current and a maintaining current or by voltage clamping of a source/drain of MOSFET that is coupled to the LED module. When the LED module is dimmed off, the voltage across the LED module can be kept at a value around a lighting threshold voltage of the LED module that is a minimum voltage for lighting the LED module. Therefore, a voltage difference between the drain and the source of MOSFET coupled to the LED module is smaller than that in the conventional arts. Hence, a withstand voltage of MOSFET can be reduced, and cost of the LED driving circuit as well as the power consumption of MOSFET can be lessened, thereby improving integral efficiency of the circuit.

A drive unit for driving multiple groups of light emitting elements operable at different voltages, though the drive unit is adapted to operate the different groups by means of a step-up circuit providing a low voltage. The inventive step-up circuit steps up a power source voltage (Vcc) to a predetermined positive voltage (Vp), which is inverted to a negative voltage (Vn) by an inverted voltage generating circuit. A first light emitting element group (first LED group) operable at a low voltage is by the positive voltage (Vp), with low necessary voltage emit light on positive voltage and grand voltage, while a second light emitting element group (second LED group) operable at a higher voltage is driven by a combination of the positive voltage (Vp) and the negative voltage (Vn). Thus, energy loss in the drive unit is reduced, thereby improving the operating efficiency of the drive unit.

A PDP driving circuit is comprised of a power recovery unit for recovering an electric power from a capacitive load by resonance operation with PDP which is the capacitive load Cp, and reusing the recovered power. The power recovery unit includes a recovery inductor for resonating with the capacitive load, a recovery switch element for connecting the recovery capacitor to the capacitive load and recovery inductor, and forming a channel for passing resonance current, a counterflow preventive diode for blocking flow of current in the recovery switch element in reverse polarity direction, and a protective diode for forming a closed current channel including the recovery inductor and recovery switch element when the counterflow preventive diode is changed from ON state to OFF state.

An electric leakage detecting apparatus, in an electric leakage detecting apparatus which is insulated from a chassis ground and detects electric leakages of a battery, is provided with: a voltage dividing circuit that divides an output voltage of the battery; an electric leakage determining circuit provided at a rear stage of the voltage dividing circuit, that determines the presence of an electric leakage based on a voltage detected by a circuit that respectively connects to a positive electrode side insulation resistance or a negative electrode side insulation resistance of the battery; and a dark current inhibit circuit in which a switch and a resistance are connected in parallel, that is inserted between at least either one of wiring that connects a positive terminal of the battery and the voltage dividing circuit, and wiring that connects a negative terminal of the battery and the voltage dividing circuit.

One aspect according to the present invention includes an electric power tool, in which a capacitor is positioned closer to a motor control circuit than a switch electrically connected to the motor control circuit.

The invention discloses a hybrid direct-current transmission topology structure and a control method. The hybrid direct-current transmission topology structure is characterized in that two groups of thyristor converters are connected in series to form a first converter station, two groups of voltage source type converters are connected in series to form a second converter station, switch elements are respectively mounted at the same positions of the positive ends and the negative ends of the converters, in series connection, of the first converter station or the second converter station or the first converter station and the second converter station, and meanwhile, the same positions of the positive ends and the negative ends of the converters are in parallel connection and crossly connected to the opposite ends through one switch element respectively. The control method includes reducing direct-current power of a direct-current system to zero, and changing states of the switch elements to invert voltage polarity of the direct-current system, thereby achieving overall operation of two poles after inversion of the direct-current voltage polarity or achieving new two-pole direct-current operation by means of crossing of the converters in series connection of the converter stations at both ends. The system of the hybrid direct-current transmission topology structure has advantages of low manufacturing cost as the conventional direct-current transmission and control flexibility as the flexible direct-current transmission, and the like.

The power IC includes an output transistor MO which controls a current flowing into an L load, a dynamic clamp circuit which clamps an overvoltage, and a clamp control circuit which controls the operation of the dynamic clamp circuit. The clamp control circuit activates the dynamic clamp circuit, which is normally inactive, upon detection of a back EMF by the L load.

The invention relates to an active power quality adjuster, consisting of a fundamental wave compensation part and a harmonic wave compensation part, and the two parts compensate fundamental current and harmonic current respectively. An H-bridge cascade multilevel inverter and a fundamental wave connection inductance are connected in series at the fundamental wave compensation part, so that reactive compensation and unbalanced load compensation can be dynamically carried out; the H-bridge cascade multilevel inverter and a unituning passive filter are connected in series to form the harmonic wave compensation part which is connected across the two ends of the fundamental wave connection inductance. Therefore, the power quality adjuster can lower switching frequency and loss of the H-bridge cascade multilevel inverter at the fundamental wave compensation part greatly on one hand, and only a fraction of fundamental current passes the harmonic wave compensation part and the whole part only undertakes fundamental voltage of the fundamental wave connection inductance without undertaking fundamental voltage on the other hand, thereby effectively reducing the capacity of the H-bridge inverter and the withstand voltage at the harmonic wave compensation part.

A semiconductor device 1 in which an IGBT region 2 and a diode region 3 adjoining each other are formed on a same substrate 4 is presented. The semiconductor device 1 is provided with a plurality of first gate trenches 11 extending abreast in a first direction in the IGBT region 2 and a plurality of second gate trenches 12 extending abreast in a second direction intersecting the first direction. The first gate trenches 11 and the second gate trenches 12 are not in contact with each other.

A reset pulse generating section applies the total of voltages of a positive voltage source and two constant-voltage sources from a high side ramp wave generating section to a high side scan switching device as the upper limit of a reset voltage pulse, and applies the ground potential from a low side ramp wave generating section to a low side scan switching device as the lower limit of the reset voltage pulse. A sustaining pulse generating section applies the upper and lower limits of a sustaining voltage pulse through a common sustaining pulse transmission path to the low side scan switching device.

An interleaved flyback converter device with leakage energy recycling includes: two flyback converters and an input power. Each flyback converter includes a capacitor, a switch, two diodes, and a transformer. The input power is connected to the capacitors of the two flyback converters respectively. By using the capacitors as input voltage, the two flyback converters are provided with lower voltage rating. The diodes are used to recycle leakage energy directly, and to clamp voltage on power components. Therefore, in addition to enhancing efficiency via recycling leakage energy, the two flyback converters have lower switching losses due to lower switching voltage.

A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.