1075results about How to "Reduce inductance" patented technology

A capacitor-built-in-type printed wiring substrate which can reliably eliminate noise and attain extremely low resistance and low inductance in connections between an IC chip and the capacitor, and a printed wiring substrate and capacitor for use in the same. A capacitor-built-in-type printed wiring substrate 100 on which an IC chip is mounted includes a capacitor-built-in-type printed wiring substrate 110 and an IC chip 101 mounted on the capacitor-built-in-type printed wiring substrate 110. A printed wiring substrate 120 includes a number of connection-to-IC substrate bumps 152 and a closed-bottomed capacitor accommodation cavity 121 formed therein. A capacitor 130 is disposed in the cavity 121 and includes a pair of electrode groups 133E and 133F and a number of connection-to-IC capacitor bumps 131 connected to either one of the paired electrode groups 133E and 133F. The connection-to-IC capacitor bumps 131 are flip-chip-bonded to corresponding connection-to-capacitor bumps 103 on the IC chip 101. The connection-to-IC substrate bumps 152 are flip-chip-bonded to corresponding connection-to-substrate bumps 104 on the IC chip 101.

The metallic case of a power conversion apparatus includes a casing having a side wall, as well as an upper case and a lower case, a first area being formed between a cooling jacket provided at the inner periphery of the side wall and the lower case, the metal base plate dividing the first area between the cooling jacket and the upper case into a lower side second area and an upper side third area, first and second power modules being fastened to a top surface and a capacitor module being provided in the first area, driving circuits that drive inverter circuits of the power modules respectively being provided in the second area, and a control circuit that controls the driver circuits being provided in the third area.

The present invention provides a highly reliable electric power converter reduced in parasitic inductance.

An electric power converter that includes a capacitor module which has a DC terminal, an inverter which coverts a direct current into an alternating current, and heat release fins which cool the inverter, is constructed so that: the inverter has a power module including a plurality of power semiconductor elements; the power module further has a metallic base, a dielectric substrate provided on one face of the metallic base, a power semiconductor element fixed to the dielectric substrate, and a DC terminal; the metallic base has the heat release fins on the other face; the DC terminal in the power module and the DC terminal in the capacitor module are each formed by stacking flat plate conductors via an insulator; the two positive and negative DC terminals have respective front ends bent in opposite directions; a plane including the bent sections is used as a surface for connecting the power module and the capacitor module; and the insulators overlap each other at the connection surface.

The optical module of the invention for high-speed bidirectional transceiver consists of a signal receiving unit, a signal transmitting unit, a common receiving-transmitting optical fiber, and a fiber coupling unit. The laser diode and the photodiode are arranged parallel to each other in closely located recesses of the module housing. Such an arrangement makes it possible to shorten distances for guiding lead wires from the terminals of the PC board to the respective terminals of the transmitting and receiving diodes. The laser diode emits a first transmitting laser beam that passes through a microobjective that collimates the beam and directs into onto a full-reflection mirror located inside the module housing. The full-reflection mirror reflects the first transmitting beam at an angle of 90° and transmits it to the end face of an optical fiber through an optical fiber collimator that centers the beam with the fiber core. The module is provided with a second mirror, which is fully transparent to the aforementioned first transmitting beam, but is fully reflective to a second transmitting beam that may propagate in a direction opposite to the first transmitting beam on a different wavelength. Alignment of the optical components is facilitated due to the fact that it is carried out with diffractionally limited and collimated beams.

A power transistor having of a plurality of vertical MOSFET devices combined in parallel to achieve high-performance operation and methods of fabricating this device.

In a power inverter, a coolant passage is fixed to a chassis to cool the chassis; the chassis is divided into a first region and a second region by providing the coolant passage in the chassis; a power module is provided in the first region as fixed to the coolant passage; a capacitor module is provided in the second region; and the DC terminal of the capacitor module is directly connected to the DC terminal of the power module.

For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

Provided is a via for use in a printed circuit board or integrated circuit having first, second, third, and fourth layers. The via includes a first path capable of transmitting a forward current from the first to the second layer and a second path capable of transmitting a return current resulting from the forward current from the third to the fourth layer to return to a source of the forward current.

In order to provide a built-in capacitor type wiring board capable of preventing misalignment of the capacitor, a capacitor built-in type wiring board is provided which includes a core board; a multilayer portion disposed on at least one side of the core board and formed by a plurality of interlayer insulating layers; and a plurality of conductor layers alternately laminated on the core board. The capacitor is of a chip-like shape with first and second main surfaces and includes a dielectric layer; electrode layers laminated on the dielectric layer; and a hole portion opening at least at the second main surface. The capacitor is embedded in the interlayer insulating layers so that the second main surface faces the core board.

In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET GF low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chips and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.

A semiconductor chip and a semiconductor device mounting the semiconductor chip capable of increasing a capacitance of a capacitor without reducing the number of signal bumps or power bumps of a package and the number of C4 solder balls of the semiconductor chip, and achieving a stable power supply with suppressing fluctuations of power at a resonance frequency without a limitation in a position to mount a capacitor for lowering noise of a signal transceiving interface block. In the semiconductor device, a via hole is provided to the semiconductor chip, a power-supply electrode connected to the via hole is provided to a back surface of the semiconductor chip, and a capacitor is mounted to the electrode on the back surface. And, a high-resistance material is used for a material of a power-supply via hole inside the semiconductor chip, thereby increasing the resistance and lowering the Q factor.

A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

An electronic assembly includes one or more discrete capacitors (506, 804, 1204), which are vertically connected to a housing, such as an integrated circuit package (1704). Surface mounted capacitors (506) are vertically connected to pads (602) on a top or bottom surface of the package. Embedded capacitors (804, 1204) are vertically connected to vias (808, 816, 1210, and/or 1212) or other conductive structures within the package. Vertically connecting a surface mounted or embedded capacitor involves aligning (1604) side segments (416) of some of the capacitor's terminals with the conductive structures (e.g., pads, vias or other structures) so that the side of the capacitor upon which the side segments reside is substantially parallel with the top or bottom surface of the package. Where a capacitor includes extended terminals (1208), the capacitor can be embedded so that the extended terminals provide additional current shunts through the package.

A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.

A carrier for a semiconductor component is provided having passive components integrated in its substrate. The passive components include decoupling components, such as capacitors and resistors. A set of connections is integrated to provide a close electrical proximity to the supported components.

A high-frequency semiconductor device includes: a first cell which includes of gate electrodes on a surface of an epitaxial layer of a substrate, drain electrodes and source electrodes alternately located relative to the gate electrodes, a source electrode connection wiring striding over the gate electrodes and the drain electrodes and connecting the source electrodes, and a drain electrode connection wiring striding over the gate electrodes and the source electrodes and connecting the drain electrodes; a second cell which has the same configurations as the first cell, is located in an extended direction of each of the gate electrodes of the first cell, and has the drain electrode connection wiring proximate to the drain electrode connection wiring of the first cell; and a gate electrode bar located between the drain electrode connection wirings of the first and second cells, and to which the gate electrodes of the first and second cells are connected.

This disclosure relates to transient energy systems for supplying power to a load substantially instantaneously on demand. Transient energy systems may include a flywheel coupled the rotor of an induction motor generator. One embodiment of the disclosure refers to systems and methods for reducing loads on a bearing in a transient energy system. In another embodiment, the disclosure refers to an induction motor generator that is optimized for high power transient power generation, yet low power motor operation. Yet another embodiment of the disclosure refers to using a flywheel as a drag pump to cool components of a transient energy system. In yet another embodiment, a slip control scheme is discussed for regulating a DC bus. In yet a further embodiment of the disclosure a method is provided for reducing unnecessary turbine starts by making turbine start a function of the rotational velocity of a flywheel.

A semiconductor device including a semiconductor device package providing a capacitor in its circuit board and a semiconductor chip mounted on that package, wherein the capacitor is provided directly under a semiconductor chip mounting surface of the circuit board on which the semiconductor chip is to be mounted and the conductor circuit electrically connecting the semiconductor chip and capacitor is made the shortest distance by having the external connection terminals of the capacitor directly connected to the other surface of the connection pads exposed at one surface at the semiconductor chip mounting surface of the circuit board and to which the electrode terminals of the semiconductor chip are to be directly connected.

This invention provides a surface mounting type planar magnetic device comprised of upper ferrite magnetic film, lower ferrite magnetic film and a planar coil interposed therebetween. For applying surface mount technology, an opening is formed in the upper ferrite magnetic film above a coil terminal portion and then, an external electrode conductive with the coil terminal portion through the opening is formed on the upper ferrite magnetic film. Further, this surface mounting type planar magnetic device is of a thin structure and can be mounted on the surface of a printed board. Its power loss is small, its inductance is large, its frequency characteristic is excellent, the disparity of the characteristic is small and its reliability is excellent.