1705 results about "High stress" patented technology

A structure of a micro electro mechanical system (MEMS) for a planar display apparatus is described. The MEMS structure used as a transmissible or reflective display device has a shielding electrode and a control electrode. The shielding electrode has a low stress electrode and a high stress electrode. The high stress electrode connected to the low stress electrode is a movable element. The control electrode is located below the high stress electrode. The control electrode attracts the high stress electrode when a voltage is applied to the control electrode. The high stress electrode deforms and the position of the low stress electrode is altered.

Methods and apparatus for service-level based and / or skills-based assignment of a work item to one (or more) of a plurality of resources based on fitness, for example, of skills required by the former to those provided by the latter. Assignment takes into account the level of stress on the work item and / or resources, such that the number of resources fit for assignment varies as the level of stress varies. Systems according to the invention can be used, by way of example, to route a call or other request made by a customer to a service center. The requirements for processing the call (determined, for example, by an incoming call operator) are matched against the skill sets of available customer service agents, taking call and / or resource stress levels into account. For example, some implementations may match an incoming call having a low stress factor (e.g., a newly received call from a standard customer) to a smaller pool of agents with both required and desired skills, while assigning a call with a higher stress factor to a larger pool of agents with at least required skills. Other embodiments may match an incoming call having a low stress factor to the larger pool of agents having at least the required skills, while assigning a call with a higher stress factor (e.g., a call from a priority customer) to an agent from the smaller pool of agents who have both required and desired skills.

An improved embolic filter frame having looped support struts. The frame configuration provides enhanced longitudinal compliance, improved sealing against a vessel wall, low profile delivery, and a short deployed length. The looped support struts have a high degree of “radial” stiffness with a low degree of “longitudinal” stiffness. In the deployed state, the frame exerts a relatively high stress onto a vessel wall to maintain an effective seal, yet remains compliant in the longitudinal direction. Minor displacements of the support wire or catheter are therefore not translated to the filter. The looped support struts elongate when tensioned and assume a compressed and essentially linear form. While constrained in this linear state by a delivery catheter, the support struts exert minimal stress onto the delivery system. The overall delivery profile and stiffness are therefore reduced. When the delivery catheter constraint is removed during deployment, the struts “snap open” and assume a looped configuration which exert a high degree of force onto the vessel wall, creating an enhanced filter to vessel wall seal. In addition, the looped struts and the central collar connecting the support struts to the support wire, are positioned essentially within the plane of the filter opening. The overall deployed length of the embolic filter is therefore reduced.

A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

A golf club head formed of multiple materials is disclosed. Those portions of the club head that are subject to high stresses during normal use of the golf club head are formed of a metallic material. Most of the material beyond what is required to maintain structural integrity, however, is removed and replaced with a lightweight material. This freed-up mass that can be redistributed to other, more beneficial locations of the club head. The lightweight material also damps vibrations generated during use of the golf club. This vibration damper may be retained in a state of compression to enhance the vibration damping. One or more weight members may be included to obtain desired center of gravity position, moments of inertia, and other club head attributes.

A damper body for a magnetorheological (MR) damper and associated methods of forming the damper body. The damper body is formed of a base material, such as a steel, and is coated with an abrasion-resistant layer comprising chromium. The layer of chromium provides a sliding wear surface for sliding contact with a reciprocating piston. To avoid high-stress abrasive wear over the expected service life of the magnetorheological damper, the layer of chromium has a minimum thickness greater than or equal to a minimum thickness of about 8 .mu.m. In other embodiments, be fore applying the abrasion-resistant layer of chromium, the damper body is coated with a layer of a hard coating material having a hardness greater than the hardness of the base material. The effective hardness of the damper body is a composite of the respective hardnesses of the base material comprising the damper body and the layer of hard coating material. The thickness of abrasion-resistant layer of chromium is chosen in direct relation to the effective hardness.

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source / drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source / drain regions of P-channel or N-channel transistors, respectively.

Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and / or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.

An artificial joint (3), particularly for replacing a talocrural joint, including a first primary joint surface (1) that forms an articular fossa (4) particularly for replacing the tibia composed of concave curvatures extending parallel to a primary function plane of the joint (3), which corresponds to the sagittal plane, and a second primary joint surface (2) which cooperates with the first primary joint surface (1) as a component of a condoyle (5) that replaces the talus and has convex curvatures (7, 8, 9, 10) on the primary function plane that are adapted to the first primary joint surface (1). To achieve high stress resistance and optimal joint mobility, depending on the position of the joint, the radii of the curvatures (7, 8, 9, 10) are calculated such that the differential amounts arising between the corresponding radii of the first and second primary joint surfaces (1, 2) in an ascending angular position (V) relative to a descending angular position and also simultaneously between a medial face (11) and a lateral face (12) of the joint (3) deviate from one another.

A dynamic clamp is used in conjunction with capacitors with thinner dielectric or with deep trench capacitors to solve the problem of dielectric breakdown in high stress capacitors. The dynamic clamp is realized using a two stage pump operation cycle such that, during a first stage pump cycle, a middle node of a pair of series connected capacitors is pre-charged to a supply voltage and, during a second stage pump cycle, the middle node is coupled by a boost clock. Thus, at any moment in the pump operation cycle, the voltage across the capacitors is held within a safety range.

The invention provides a curved liquid crystal panel structure, which comprises a TFT base plate (1), a CF base plate (3), spacing objects (5), a liquid crystal layer (7) and a sealing glue layer (9), wherein the CF base plate (3) is in arrangement corresponding to the TFT base plate, the spacing objects (5) are arranged between the TFT base plate (1) and the CF base plate (3), the liquid crystal layer (7) is arranged between the TFT base plate (1) and the CF base plate (3), the sealing glue layer (9) is arranged between the TFT base plate (1) and the CF base plate (3) and is positioned at the edge, in the bending direction of a curved liquid crystal panel, the CF base plate (3) is provided with a middle region (31) and two side regions (33) positioned at two sides of the middle region, the stress born by the middle region (31) is greater than that born by the two side regions (33), and the spacing object (51) positioned in the middle region (51) is set to be capable of bearing higher stress than the spacing object (53) positioned at two side regions (33), so the equal gap is maintained between the CF base plate (3) and the FT base plate (1), and the integral box thickness consistency of the curved liquid crystal panel is ensured.

A semiconductor device with TSV and its fabrication method are revealed. The semiconductor device primarily comprises a chip and a flexible metal wire inside. A redistributed trace layer and a passivation layer are formed on the active surface of the chip. A through hole penetrates the chip from the active surface to the back surface, in which an insulation layer is disposed. The flexible metal wire has a first terminal and a second terminal where the first terminal is bonded to a redistributed pad of the redistributed trace layer and the second terminal passes through the through hole and protrudes from the back surface of the chip. Therefore, the flexible metal wire passing through the chip has two protruded integral terminals to achieve high stress resistance TSV with lower costs for good electrical connections of vertical stacking chips.

Source and drain extension regions are selectively removed by a dopant concentration dependent etch or a doping type dependent etch, and an embedded stress-generating material such as SiGe alloy or a Si:C alloy in the source and drain extension regions is grown on a semiconductor substrate. The embedded stress-generating material may be grown only in the source and drain extension regions, or in the source and drain extension regions and in deep source and drain regions. In one embodiment, an etch process that removes doped semiconductor regions of one conductivity type selective to doped semiconductor regions of another conductivity type may be employed. In another embodiment, a dopant concentration dependent etch process that removes doped semiconductor regions irrespective of the conductivity type selective to undoped semiconductor regions may be employed.

A golf club head formed of multiple materials is disclosed. Those portions of the club head that are subject to high stresses during normal use of the golf club head are formed of a metallic material. Most of the material beyond what is required to maintain structural integrity, however, is removed and replaced with a lightweight material. This freed-up mass that can be redistributed to other, more beneficial locations of the club head. The lightweight material also damps vibrations generated during use of the golf club. This vibration damper may be retained in a state of compression to enhance the vibration damping. One or more weight members may be included to obtain desired center of gravity position, moments of inertia, and other club head attributes. A insert formed of multiple materials and having regions of varying thickness may also be included on a rear surface of the club head.

The present invention is directed to a system and method for simulating the interaction of a simulated vehicle with one or more simulated road surfaces. A computer modelling program is used to create a computer-based road surface model and a computer-based vehicle model. The computer-based vehicle model may include a body model, a chassis model, a suspension model, a wheel model and a tire model. A computer simulation engine program is operative with the computer-based road surface and vehicle models to selectively simulate the interaction therebetween and provide simulation data relative thereto. The simulation data may be used to identify high stress areas or low durability areas of the vehicle or to compute vehicle suspension parameters.

A fluid end for a reciprocating pump including a body having a base, a side and a longitudinal opposing side, a cylinder bore formed horizontally through the body and a vertical bore intersecting the cylinder bore defining a high stress region proximate the intersection, and a tension member extending through the body substantially parallel to the longitudinal axis of the body, wherein the tension member provides a compressive load on the body reducing the stresses encountered in the region during operation of the fluid end.