1710 results about "High stress" patented technology

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.

A structure of a micro electro mechanical system (MEMS) for a planar display apparatus is described. The MEMS structure used as a transmissible or reflective display device has a shielding electrode and a control electrode. The shielding electrode has a low stress electrode and a high stress electrode. The high stress electrode connected to the low stress electrode is a movable element. The control electrode is located below the high stress electrode. The control electrode attracts the high stress electrode when a voltage is applied to the control electrode. The high stress electrode deforms and the position of the low stress electrode is altered.

A double shouldered high torque resistance threaded connection for drill stem components having enhanced resistance to torque forces, tensile loads and material stress and fatigue is disclosed. The tool joint is provided with threads having a 75 DEG included angle between the thread flanks thereof and with generally elliptical root surfaces to minimize material stress and fatigue during operation under high torque and high tensile loads. When made up, the double intrerengaging shoulders of the threaded tool joint are in firm face to face engagement permitting torque forces and tensile loads to propagate through the tool joint in a manner that minimizes bending forces and minimizes high stress concentration so that the resulting service life of the tool joint is significantly enhanced.

A Ball Grid Array package having an increased fatigue life and improved conductive pad adhesion strength, as well as providing sufficient wiring space within the package, is disclosed. In particular, solder joints having a combination of mask-defined and pad-defined solder joint profiles are formed using a mask having non-circular elongated openings. The non-circular elongated openings of the mask have a major axis and a minor axis, such that the dimension of the openings along the major axis is greater than the diameter of the conductive pads, and the dimension of the openings along the minor axis is less than the diameter of the conductive pads. In addition, the major axis of the openings within the mask are selectively oriented in the direction of highest stress for each solder joint within the package, while providing ample wiring space therein.

Methods and apparatus for service-level based and / or skills-based assignment of a work item to one (or more) of a plurality of resources based on fitness, for example, of skills required by the former to those provided by the latter. Assignment takes into account the level of stress on the work item and / or resources, such that the number of resources fit for assignment varies as the level of stress varies. Systems according to the invention can be used, by way of example, to route a call or other request made by a customer to a service center. The requirements for processing the call (determined, for example, by an incoming call operator) are matched against the skill sets of available customer service agents, taking call and / or resource stress levels into account. For example, some implementations may match an incoming call having a low stress factor (e.g., a newly received call from a standard customer) to a smaller pool of agents with both required and desired skills, while assigning a call with a higher stress factor to a larger pool of agents with at least required skills. Other embodiments may match an incoming call having a low stress factor to the larger pool of agents having at least the required skills, while assigning a call with a higher stress factor (e.g., a call from a priority customer) to an agent from the smaller pool of agents who have both required and desired skills.

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source / drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source / drain regions of P-channel or N-channel transistors, respectively.

An improved embolic filter frame having looped support struts. The frame configuration provides enhanced longitudinal compliance, improved sealing against a vessel wall, low profile delivery, and a short deployed length. The looped support struts have a high degree of “radial” stiffness with a low degree of “longitudinal” stiffness. In the deployed state, the frame exerts a relatively high stress onto a vessel wall to maintain an effective seal, yet remains compliant in the longitudinal direction. Minor displacements of the support wire or catheter are therefore not translated to the filter. The looped support struts elongate when tensioned and assume a compressed and essentially linear form. While constrained in this linear state by a delivery catheter, the support struts exert minimal stress onto the delivery system. The overall delivery profile and stiffness are therefore reduced. When the delivery catheter constraint is removed during deployment, the struts “snap open” and assume a looped configuration which exert a high degree of force onto the vessel wall, creating an enhanced filter to vessel wall seal. In addition, the looped struts and the central collar connecting the support struts to the support wire, are positioned essentially within the plane of the filter opening. The overall deployed length of the embolic filter is therefore reduced.

A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.

Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles wherein pH can be adjusted for improved organic electronic device performance. Films deposited from invention compositions are useful as buffer layers in electroluminescent devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticles may have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

A golf club head formed of multiple materials is disclosed. Those portions of the club head that are subject to high stresses during normal use of the golf club head are formed of a metallic material. Most of the material beyond what is required to maintain structural integrity, however, is removed and replaced with a lightweight material. This freed-up mass that can be redistributed to other, more beneficial locations of the club head. The lightweight material also damps vibrations generated during use of the golf club. This vibration damper may be retained in a state of compression to enhance the vibration damping. One or more weight members may be included to obtain desired center of gravity position, moments of inertia, and other club head attributes.

A golf club head formed of multiple materials is disclosed. Those portions of the club head that are subject to high stresses during normal use of the golf club head are formed of a metallic material. Most of the material beyond what is required to maintain structural integrity, however, is removed and replaced with a lightweight material. This freed-up mass that can be redistributed to other, more beneficial locations of the club head. The lightweight material also damps vibrations generated during use of the golf club. This vibration damper may be retained in a state of compression to enhance the vibration damping. One or more weight members may be included to obtain desired center of gravity position, moments of inertia, and other club head attributes. A insert formed of multiple materials and having regions of varying thickness may also be included on a rear surface of the club head.

A damper body for a magnetorheological (MR) damper and associated methods of forming the damper body. The damper body is formed of a base material, such as a steel, and is coated with an abrasion-resistant layer comprising chromium. The layer of chromium provides a sliding wear surface for sliding contact with a reciprocating piston. To avoid high-stress abrasive wear over the expected service life of the magnetorheological damper, the layer of chromium has a minimum thickness greater than or equal to a minimum thickness of about 8 .mu.m. In other embodiments, be fore applying the abrasion-resistant layer of chromium, the damper body is coated with a layer of a hard coating material having a hardness greater than the hardness of the base material. The effective hardness of the damper body is a composite of the respective hardnesses of the base material comprising the damper body and the layer of hard coating material. The thickness of abrasion-resistant layer of chromium is chosen in direct relation to the effective hardness.

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source / drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source / drain regions of P-channel or N-channel transistors, respectively.

A semiconductor device with TSV and its fabrication method are revealed. The semiconductor device primarily comprises a chip and a flexible metal wire inside. A redistributed trace layer and a passivation layer are formed on the active surface of the chip. A through hole penetrates the chip from the active surface to the back surface, in which an insulation layer is disposed. The flexible metal wire has a first terminal and a second terminal where the first terminal is bonded to a redistributed pad of the redistributed trace layer and the second terminal passes through the through hole and protrudes from the back surface of the chip. Therefore, the flexible metal wire passing through the chip has two protruded integral terminals to achieve high stress resistance TSV with lower costs for good electrical connections of vertical stacking chips.

Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and / or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.

Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles. Films cast from invention compositions are useful as buffer layers in organic electronic devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticies have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device.

An artificial joint (3), particularly for replacing a talocrural joint, including a first primary joint surface (1) that forms an articular fossa (4) particularly for replacing the tibia composed of concave curvatures extending parallel to a primary function plane of the joint (3), which corresponds to the sagittal plane, and a second primary joint surface (2) which cooperates with the first primary joint surface (1) as a component of a condoyle (5) that replaces the talus and has convex curvatures (7, 8, 9, 10) on the primary function plane that are adapted to the first primary joint surface (1). To achieve high stress resistance and optimal joint mobility, depending on the position of the joint, the radii of the curvatures (7, 8, 9, 10) are calculated such that the differential amounts arising between the corresponding radii of the first and second primary joint surfaces (1, 2) in an ascending angular position (V) relative to a descending angular position and also simultaneously between a medial face (11) and a lateral face (12) of the joint (3) deviate from one another.

The invention discloses a hydraulic fracturing technology for a horizontal well with fractures. The hydraulic fracturing technology comprises the following steps in sequence: (1), according to on-site information, calculating the stress difference values caused by major fractures and adjacent fractures; (2), according to the stress difference values caused by the major fractures and the adjacent fractures, calculating the pressure required when the fracture turns; (3), according to the pressure required when the fracture turns, determining the intensity of temporary plugging agents, and calculating the corresponding construction displacement; (4), according to the design parameters, conducting the segmental multi-cluster fracturing and impulse-type temporary plugging pressurizing technology on a reservoir stratum simultaneously. The hydraulic fracturing technology is mainly based on the horizontal stress difference drop-out values caused by the major fractures and the adjacent fractures, and simultaneously adopts the segmental multi-cluster fracturing and impulse-type temporary plugging pressurizing technology to force the fracture to turn, breaks through the technical bottleneck that the fractures are difficult to form in the stratum with a high stress difference and rudimentary natural fractures, and fills in the blank in the prior art.

The invention belongs to the technical field of concrete reinforcement and relates to a method for reinforcing concrete with a fibrage net and a cement-based material. The method is to pour the fibrage net the total thickness of which is between 10 and 20 millimeters and fine concrete on the outer surface of a structure, and is characterized by comprising the following steps that: drilling holes on the surface of the structure in the process of construction; using the short end foot of a U-shaped shear resistant pin of which the two end feet have different lengths to hook the fibrage net, and inserting the long end foot thereof into the hole after a building structural adhesive is smeared on the long end foot; spraying the fine concrete after the adhesive is solidified; using the short end foot of a U-shaped hook of which the two end feet have different lengths to hook a second layer fibrage net, and inserting the long end foot thereof to the fine concrete; and spraying the fine concrete. The method can avoid the generation of interface micro cracks at high stress, effectively prevent interface peeling damages, reinforces building structures reliably, simply, efficiently and environmental protection, and is applicable to reinforcing and repairing various types of structures.

A dynamic clamp is used in conjunction with capacitors with thinner dielectric or with deep trench capacitors to solve the problem of dielectric breakdown in high stress capacitors. The dynamic clamp is realized using a two stage pump operation cycle such that, during a first stage pump cycle, a middle node of a pair of series connected capacitors is pre-charged to a supply voltage and, during a second stage pump cycle, the middle node is coupled by a boost clock. Thus, at any moment in the pump operation cycle, the voltage across the capacitors is held within a safety range.

The invention provides a curved liquid crystal panel structure, which comprises a TFT base plate (1), a CF base plate (3), spacing objects (5), a liquid crystal layer (7) and a sealing glue layer (9), wherein the CF base plate (3) is in arrangement corresponding to the TFT base plate, the spacing objects (5) are arranged between the TFT base plate (1) and the CF base plate (3), the liquid crystal layer (7) is arranged between the TFT base plate (1) and the CF base plate (3), the sealing glue layer (9) is arranged between the TFT base plate (1) and the CF base plate (3) and is positioned at the edge, in the bending direction of a curved liquid crystal panel, the CF base plate (3) is provided with a middle region (31) and two side regions (33) positioned at two sides of the middle region, the stress born by the middle region (31) is greater than that born by the two side regions (33), and the spacing object (51) positioned in the middle region (51) is set to be capable of bearing higher stress than the spacing object (53) positioned at two side regions (33), so the equal gap is maintained between the CF base plate (3) and the FT base plate (1), and the integral box thickness consistency of the curved liquid crystal panel is ensured.

A semiconductor device with TSV and its fabrication method are revealed. The semiconductor device primarily comprises a chip and a flexible metal wire inside. A redistributed trace layer and a passivation layer are formed on the active surface of the chip. A through hole penetrates the chip from the active surface to the back surface, in which an insulation layer is disposed. The flexible metal wire has a first terminal and a second terminal where the first terminal is bonded to a redistributed pad of the redistributed trace layer and the second terminal passes through the through hole and protrudes from the back surface of the chip. Therefore, the flexible metal wire passing through the chip has two protruded integral terminals to achieve high stress resistance TSV with lower costs for good electrical connections of vertical stacking chips.

A method and structure for producing CMOS devices having thin gates with enhanced stress in a stressed channel is provided. The method allows for producing a CMOS device with a relatively thin gate to provide improved gate response characteristics. Additionally, the structure includes a first stressed film having a raised portion which extends above a top surface of the thin gate. By providing a raised portion of the first stressed film extending about a top surface of the gate, a relatively thick layer of the first stressed film as compared to the thickness of the thin gate is included in the CMOS device and thus allows for higher stress levels in the stressed channel. Additionally, a second stressed film having a stress direction opposite to that of the first stressed film may be included above the thin gate to further enhance the stress in the stressed channel of the CMOS device.

Source and drain extension regions are selectively removed by a dopant concentration dependent etch or a doping type dependent etch, and an embedded stress-generating material such as SiGe alloy or a Si:C alloy in the source and drain extension regions is grown on a semiconductor substrate. The embedded stress-generating material may be grown only in the source and drain extension regions, or in the source and drain extension regions and in deep source and drain regions. In one embodiment, an etch process that removes doped semiconductor regions of one conductivity type selective to doped semiconductor regions of another conductivity type may be employed. In another embodiment, a dopant concentration dependent etch process that removes doped semiconductor regions irrespective of the conductivity type selective to undoped semiconductor regions may be employed.

The invention provides a polymer modified asphalt, and the weight of the components comprising as follows :45-55% matrix asphalt, 4 - 8% blend oil, 12 - 14% of SBS ,5-9 % APAO, 2-7% of High-temperature improvement and 15-20% filler. It also offers polymer modified asphalt, which made of waterproof membrane and the railway bridge, highway bridge deck waterproofing project applications. The invention of these waterproofing membrane have a high standard of waterproof function, it can withstand high intensity of railway bridge and particularly high stress dynamic load .It also have excellent performance on water-resistance, high and low temperature resistance, adhesion, crack resistance, fatigue resistance and other aspects .it can be used for railway bridge and the road deck waterproofing works.

The present invention is directed to a system and method for simulating the interaction of a simulated vehicle with one or more simulated road surfaces. A computer modelling program is used to create a computer-based road surface model and a computer-based vehicle model. The computer-based vehicle model may include a body model, a chassis model, a suspension model, a wheel model and a tire model. A computer simulation engine program is operative with the computer-based road surface and vehicle models to selectively simulate the interaction therebetween and provide simulation data relative thereto. The simulation data may be used to identify high stress areas or low durability areas of the vehicle or to compute vehicle suspension parameters.