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4821results about How to "Little change" patented technology

Substrate processing apparatus

A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.
Owner:KOKUSA ELECTRIC CO LTD

DMA engine for protocol processing

InactiveUS20060206635A1Determinism and uniformity in operationPredictable performance gainElectric digital data processingData transmissionProtocol processing
A DMA engine, includes, in part, a DMA controller, an associative memory buffer, a request FIFO accepting data transfer requests from a programmable engine, such as a CPU, and a response FIFO that returns the completion status of the transfer requests to the CPU. Each request includes, in part, a target external memory address from which data is to be loaded or to which data is to be stored; a block size, specifying the amount of data to be transferred; and context information. The associative buffer holds data fetched from the external memory; and provides the data to the CPUs for processing. Loading into and storing from the associative buffer is done under the control of the DMA controller. When a request to fetch data from the external memory is processed, the DMA controller allocates a block within the associative buffer and loads the data into the allocated block.
Owner:PMC-SIERRA

Semiconductor device having ohmic recessed electrode

The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.
Owner:OKI ELECTRIC IND CO LTD
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