A bidirectional switching device has a first main
semiconductor element and a second main
semiconductor element. The first main
semiconductor element has a first main
electrode connected to an ungrounded side of an
AC power source, and a second main
electrode. The first main semiconductor element contains a first parasitic
diode whose
cathode region is connected to the first main
electrode and whose
anode region is connected to the second main electrode. The second main semiconductor element has a third main electrode connected to the second main electrode, and a fourth main electrode connected to a load. The second main semiconductor element contains a second parasitic
diode whose
anode region is connected to the third main electrode and whose
cathode region is connected to the fourth main electrode. A current flowing from the first main semiconductor element toward the second main semiconductor element passes through the second parasitic
diode, and a current flowing from the second main semiconductor element toward the first main semiconductor element passes through the first parasitic diode. The bidirectional switching device is used to form a semiconductor active fuse for an
AC power system. The semiconductor active fuse is capable of detecting an
overcurrent without a shunt
resistor, which was connected in series to a power supply cable, thereby minimizing heat dissipation as well as a
conduction loss. The semiconductor active fuse is capable of easily and speedily detecting not only an
overcurrent caused by a dead short but also an abnormal current caused by an incomplete
short circuit failure having a certain extent of short-circuit resistance, and breaking
alternating current in an
AC power supply cable.