There is provided a thinner
high frequency power module structure having reduced the mounting area. An insulated board is provided with a composite
metal board in which the Cu2O
powder particles are dispersed into a matrix
metal (Cu) (amount of addition of Cu2O: 20 vol %;
thermal expansion coefficient: 10.0 ppm / ° C.;
thermal conductivity: 280 W / m•K; thickness: 1 mm; size: 42.4×85 mm), a
silicon nitride board (
thermal expansion coefficient: 3.4 ppm / ° C.;
thermal conductivity: 90 W / m•K; thickness: 0.3 mm; size: 30×50 mm) deposited with Ag-
system bonding
metal layer to one principal surface of the composite metal board, and a wiring metal board formed of
copper or
copper alloy provided to the other principal surface of the ceramics insulated board. For example, the bonding metal layer is adjusted in the thickness to 50 μm, while the wiring metal board is also adjusted in the thickness to 0.4 mm. In the integrated board of the wiring and heat radiating boards, the Ni plating layer (thickness: 6 μm, not illustrated) is formed with the non-
electrolyte wet plating process to the surface metal layer of the wiring metal board and composite metal board. This Ni plating layer is formed to the wiring metal boards in order to attain the solder bondability to
mount the
semiconductor base material with the
brazing method and to enhance the wire bondability of the wiring metal board. Moreover, this Ni plating layer effectively prevents denaturation of the internal side by shutting off from the external
atmosphere.