249results about How to "Improve etch uniformity" patented technology

Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.

The invention relates to the field of film preparation, in particular to an arc ion plating arc source which controls the movement of arc pit with dynamic magnetic field. The dynamic controlled arc ion plating arc source is provided with a dynamic control magnetic field generator, a target and a target base; the target is arranged on the target base; the dynamic control magnetic field generator consists of a main control magnetic field generator and an auxiliary magnetic field generator; the main control magnetic field generator is arranged behind the target and is coaxial with the target; the auxiliary magnetic field generator is arranged around the main control magnetic field generator. In the invention, arc-shaped magnetic fields which are dynamically distributed are formed on the target surface with the help of the cooperation of the two magnetic field generators, so as to improve the discharge form and work stability of the arc pit, control the movement track of the arc pit, improve the erosion evenness and target utility rate of the target, reduce the emission of large target particles and prepare high-quality film.

The invention provides a method for forming a wire harness for a copper-based metal film through an etching liquid compound, so that in a double layer coating of a metallic oxide layer and a copper layer, erosion of the metallic oxide at a lower part is minimized and only the copper layer at an upper part is eroded. In addition, the etching liquid compound for the copper-based metal film is provided.

The embodiment of the invention provides an array substrate and a preparation method thereof, and a display device, and relates to the technical field of display so that poor size uniformity of a gap between a source electrode and a drain electrode when barrier layers are formed is prevented and the cost of the barrier layers is reduced and a problem of metal loss and signal discontinuity is solved. The array substrate includes a grid metal layer which is on an underlayer substrate and includes a grid electrode and a grid line; a grid insulating layer; an active layer; a source and drain metal layer which includes the source electrode, the drain electrode, and a data line, wherein the source and drain metal layer includes a copper metal layer and/or a copper alloy layer; and a pixel electrode layer which includes a pixel electrode directly contacting the drain electrode, a first pixel electrode reservation pattern directly contacting the source electrode, and a second pixel electrode reservation pattern directly contacting the data line, wherein an area of the pixel electrode, directly contacting the drain electrode, and the first pixel electrode reservation pattern are located between the active layer and the source and drain metal layer, and an area of the pixel electrode, not directly contacting the drain electrode, and the second pixel electrode reservation pattern are located on/beneath the grid insulating layer. The preparation method is used for preparation of the array substrate.

The present invention provides an apparatus for supporting a wafer in a semiconductor process. The apparatus includes an electrostatic chuck, a focus ring and a conductive material. The electrostatic chuck has a first fillister in its periphery. When a DC power is applied to the electrostatic chuck, the wafer is attached tightly to the electrostatic chuck by electromagnetic force. The focus ring has a second fillister opposite to the first fillister, and the focus ring is fixed on the periphery of the electrostatic chuck. The conductive material is located below the focus ring, and the conductive material is moving between the first fillister and the second fillister by a drive apparatus. When the conductive material is moving close to the focus ring in semiconductor etching process, it can improve the etching uniformity of the wafer periphery.

The present invention discloses an etching agent composition used for copper-contained metal, comprising hydrogen peroxide (H2O2), a water-soluble compound represented by the formula 1, and water, so as to increase the number of etchable substrates, thereby raising finish allowance.

The invention provides a wafer etching device and method, and relates to the technical field of semiconductors, wherein the device and method are used for improving the etching uniformity of a wafer, and improving the yield of an integrated circuit. The device comprises an etching cavity and a placement platform which is disposed in the etching cavity and can rotate. The placement platform is used for bearing the wafer, and at least rotates clockwise for one circle and anticlockwise for one circle in the etching process of the wafer. The device provided by the invention is used for the etching of the device.

The invention provides an etching device which comprises a gas supply system and an etching reaction chamber. The etching reaction chamber comprises a gas sprayer which is connected with a double-gas pipeline device and an extreme-edge gas pipeline device. The gas supply system comprises the double-gas pipeline device and the extreme-edge gas pipeline device, wherein the double-gas pipeline device is used for supplying gas for the center part and the edge part of an etched wafer, and the extreme-edge gas pipeline device is used for supplying etching reaction gas for the extreme-edge of the etched wafer. In the etching process, through changes of gas ingredients and gas flow amount at the extreme-edge position of the wafer, etching evenness of the surface of the wafer is improved, and meanwhile the etching speed is delicately controlled.

The present invention relates to an equipment for etching silicon nitride film and its method. Firstly, a phosphoric acid tank is provided, and an ultrasonic wave generator is mounted on the side wall of the phosphoric acid tank, then a wafer a silicon nitride film is formed on the wafer therein, and the ultrasonic wave generator can be started so as to etch or remove the silicon nitride film on the wafer.